[workshop] Advances in Semiconductor and Emerging Devices for Chip Design

5-Day Online International Workshop on

Recent Advances in Semiconductor and Emerging Devices for Chip Design

Oct. 6-10, 2025

Organized by the Department of Electronics, Dhanamanjuri University (DMU), Manipur,

in Collaboration with IEEE Silchar Subsection

Upcoming 5-Day International Workshop on “Recent Advances in Semiconductor and Emerging Devices for Chip Design” (6–10 October 2025) organized by Dhanamanjuri University (DMU) Manipur, in collaboration with IEEE Silchar Section. This unique event, led by Dr. Khoirom Johnson Singh, Ph.D. and his dedicated team, brings together global experts from India, Europe, and beyond. Register Online

With speakers covering topics from GaN devices and memristors to cryogenic CMOS, nanosheet FETs, biomedical circuits, and spintronics for novel computing, this workshop will serve as a melting pot of ideas, a platform for young researchers and students to learn, question, and seed new collaborations.

Education equips young minds with the foundations of knowledge, preparing them to understand technological advancements and their role in shaping society. Yet, in research, knowledge alone is not enough. To truly innovate, we must disseminate our work, engage with peers, and foster collaborations across disciplines and borders. This is where the seeds of research truly take root and grow.

Collaboration is more than sharing data or co-authoring papers. It is about bringing together diverse perspectives, connecting physics with engineering, theory with experimentation, and academia with industry. Interdisciplinary approaches not only accelerate breakthroughs, but also open new directions that no single researcher could achieve alone.

Register Online...

[paper] Is there anything left to do in TCAD?

Z. Stanojevic, F. Schanovsky, G. Rzepa, X. Klemenschits, H. Demel, 

O. Baumgartner, C. Kernstock, and M. Karner

Is there anything left to do in TCAD?

SISPAD  in Grenoble, Sept. 24 2025

https://sispad2025.inviteo.fr/

1. Global TCAD Solutions GmbH., Bosendorferstraße 1/12, 1010 Vienna (A) 

Abstract: Over the past decade, the development of commercial technology computer-aided design (TCAD) software has followed an evolutionary rather than revolutionary path. Alongside established continuum and particle-based approaches in both process and device simulation, advanced carrier transport models - such as deterministic bulk and subband Boltzmann transport equation (BTE) solvers and non-equilibrium Green’s functions (NEGF) - have been incorporated into the TCAD toolkit for single-device simulation. At the system level, the field of design-technology co-optimization (DTCO) has expanded to encompass variability, reliability, and the extension of TCAD methodologies from devices to circuits. However, most of these innovations were introduced over a decade ago, prompting the question: What remains to be developed in TCAD? We address this question by analyzing current limitations and potential future directions in TCAD development across three key dimensions: (1) fidelity, (2) integration, and (3) efficiency - each with particular relevance in commercial and industrial contexts. We examine ongoing challenges in classical TCAD, advanced transport modeling, and DTCO flows, and point to potential directions for future developments. Among these, we include various methodologies related to machine learning and hardware accelerators, particularly within the efficiency dimension.

FIG: Device 3D structure generated from a layout (GDSII) and a technology file

See also...

[paper] THz MOST based on aligned carbon nanotube arrays

Jianshuo Zhou, Zipeng Pan, Li Ding, Lin Xu, Xiaohan Cheng, Haitao Li, Fenfa Yao, Chuanhong Jin, Maguang Zhu, Lijun Liu, Huiwen Shi, Zhiyong Zhang and Lian-Mao Peng

Terahertz metal–oxide–semiconductor transistors based on aligned carbon nanotube arrays. 

Nat Electron (2025)

DOI: https://doi.org/10.1038/s41928-025-01463-6

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Peking University
2. Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, China
3. Chongqing Institute of Carbon-based Integrated Circuits, Peking University, Chongqing, China
4. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, China
5. State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China
6. Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing, China

Abstract: Films of aligned semiconducting carbon nanotubes could be used to build complementary metal–oxide–semiconductor field-effect transistors for digital integrated circuits and radio-frequency transistors for terahertz analogue integrated circuits. However, the operating frequencies of such devices remains too low for potential application in the sixth generation of wireless communications. Here we report metal–oxide–semiconductor field-effect transistors that are based on aligned carbon nanotube films and have a cut-off frequency beyond 1 THz. By optimizing gate structures and fabrication processes, we create devices with a gate length of 80 nm that have a carrier mobility of over 3,000 cm2 V−1 s−1, as well as an on-state current of 3.02 mA µm−1, a peak transconductance of 1.71 mS μm−1 at a bias of −1 V, and a saturation velocity of 3.5 × 107 cm s−1. By introducing a Y-shaped gate, we also create devices with gate lengths of 35 nm that have an extrinsic cut-off frequency (fT) of up to 551 GHz and a maximum oscillation frequency (fmax) of 1,024 GHz. Finally, we use devices with a gate length of 50 nm to fabricate mmWave-band (30 GHz) radio-frequency amplifiers that have a gain of up to 21.4 dB.

Fig: Characteristics of Y-gate structure in A-CNT MOSFETs.

Acknowledgements: This work is supported by the National Key Research & Development Program (grant number 2022YFB4401603 to L.D.) and Natural Science Foundation of China (grant numbers 62171004 to L.D., 92477201 to L.-M.P. and 62225101 to Z.Z.).