#paper: J. L. Wang et al., "Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 145-151, 2020. doi: 10.1109/JEDS.2020.2971245 https://t.co/hP3ZZwd29B https://t.co/N2v6Si9TVN

#paper: J. L. Wang et al., "Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 145-151, 2020.
doi: 10.1109/JEDS.2020.2971245 https://t.co/hP3ZZwd29B pic.twitter.com/N2v6Si9TVN

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