#paper: S. Shen and J. Yuan, "1/ f^gamma Low Frequency Noise Model for Buried Channel MOSFET," in IEEE JEDS, vol. 8, pp. 126-133, 2020 doi: 10.1109/JEDS.2020.2967897 https://t.co/AkE3oMF8lI https://t.co/W750HJoXWL

#paper: S. Shen and J. Yuan, "1/ f^gamma Low Frequency Noise Model for Buried Channel MOSFET," in IEEE JEDS, vol. 8, pp. 126-133, 2020

doi: 10.1109/JEDS.2020.2967897 https://t.co/AkE3oMF8lI pic.twitter.com/W750HJoXWL

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