Wednesday, 30 April 2008

Process for the Selection of the Next Generation SOI MOSFET Compact Models

The Compact Modeling Council (CMC) has started the Process for the Selection of the Next Generation SOI MOSFET Compact Models.

The CMC is soliciting SOI models for both partially-depleted (PD) and dynamic depletion (DD) applications. DD refers to SOI devices which exhibit PD behavior forsome bias regions, but are fully-depleted (FD) for others.

The deadline for candidate submission is May 5 2008. CMC officers will invite a number of selected model developers to the CMC Meeting in Boston, MA on 6/5/2008.

A new selection will be done after CMC members have had time to review the presentations given by model developers.

A SOI MOSFET model recommended by CMC will make lots of money!

Who wants to compete?

No comments: