May 8, 2023

[EDS MQ/DL] The Transistor Turns 75

The Transistor Turns 75
A Forward Look to Challenges and Opportunities


A series of IEEE EDS Distinguished Lecturer talks on topics in current transistor and electron device research, reflecting on the challenges ahead and the rewards inherrent in overcomming them.

  DATE AND TIME LOCATION HOSTS REGISTRATION
Date: 02 Jun 2023
Time: 08:30 AM to 05:30 PM

All times are (UTC+00:00) Edinburgh
Moller Institute
Cambridge, England UK
CB3 ODE

Click here for Map
UK and Ireland Section Chapter, ED15

Contact Host
Starts 19 April 2023 06:00 AM
Ends 30 May 2023 06:30 PM
All times are (UTC+00:00) Edinburgh

No Admission Charge

Register Now

EDS DL SPEAKERS
  • Benjamin Iniguez: Modeling 2D Semiconductor Devices
  • Lluis Marsal: Organic Photovoltaics: Opportunities and Challenges
  • Arokia Nathan: 
  • Fernando Guarin: 75th Anniversary of the Transistor Semiconductor Industry Perspective
  • Edmundo A. Gutierrez-D.: DC and RF reliability of advanced bulk and SOI CMOS technologies
  • Merlyne De Souza: Challenges to Edge computing: an era beyond silicon CMOS
  • Samar Saha: 
  • MK Radhakrishnan: Birth and Evolution of Transistor and Its Impact on Humanity
  • Xiaojun Guo: Transistor Technologies for Hybrid Integration at Micro- and Macro-scales
  • Hiroshi Iwai: Present status and future of the nanoelectronics technology

Apr 19, 2023

TataCompanies has employed former Intel executive Randhir Thakur



from Twitter https://twitter.com/wladek60

April 19, 2023 at 01:38PM
via IFTTT

Apr 18, 2023

Compact Modeling of 2D Field-Effect Biosensors

Francisco Pasadas1, Tarek El Grour2, Enrique G. Marin1, Alberto Medina-Rull1, Alejandro Toral-Lopez1, Juan Cuesta-Lopez1, Francisco G. Ruiz1, Lassaad El Mir2 and Andrés Godoy1
Compact Modeling of Two-Dimensional Field-Effect Biosensors.
Sensors 2023, 23, 1840.
DOI: 10.3390/s23041840

1 Pervasive Electronics Advanced Research Laboratory (PEARL), Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada,18071 Granada, Spain
2 Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE) LR05ES14, Faculty of Sciences of Gabes, Gabes University, Erriadh City, Zrig, 6072 Gabes, Tunisia

Abstract: A compact model able to predict the electrical read-out of field-effect biosensors based on two-dimensional (2D) semiconductors is introduced. It comprises the analytical description of the electrostatics including the charge density in the 2D semiconductor, the site-binding modeling of the barrier oxide surface charge, and the Stern layer plus an ion-permeable membrane, all coupled with the carrier transport inside the biosensor and solved by making use of the Donnan potential inside the ion-permeable membrane formed by charged macromolecules. This electrostatics and transport description account for the main surface-related physical and chemical processes that impact the biosensor electrical performance, including the transport along the low-dimensional channel in the diffusive regime, electrolyte screening, and the impact of biological charges. The model is implemented in Verilog-A and can be employed on standard circuit design tools. The theoretical predictions obtained with the model are validated against measurements of a MoS2 field-effect biosensor for streptavidin detection, showing excellent agreement in all operation regimes and leading the way for the circuit-level simulation of biosensors based on 2D semiconductors

FIG: Schematic of a two-dimensional field-effect biosensor. A sketch of the position-dependent potential is also shown, highlighting the surface charge density at the 2D channel (σ2D), at the oxide-electrolyte interface (σ0), and at the membrane-diffuse regions of the electrolyte (σmd). The latter comprises a charge-free layer (Stern layer) and an ion-permeable membrane due to the presence of charged macromolecules, with a diffusion layer located between the barrier oxide surface and the bulk electrolyte. The potential difference from the electrolyte bulk to the barrier oxide surface, ψ0, encompasses two contributions originating from a potential drop (ψ0 − ψm) across the Stern layer extending between the outer Helmholtz plane (OHP) and the barrier oxide surface, and a potential drop across the ion-permeable membrane layer formed by charged macromolecules and the diffuse layer (ψm)

Funding: This work is funded by the Spanish Government MCIN/AEI/10.13039/501100011033 through the projects PID2020-116518GB-I00 and TED2021-129769B-I00 (MCIU/AEI/FEDER-UE); and by FEDER/Junta de Andalucía-Consejería de Transformacion Económica, Industria, Conocimiento y Universidades through the projects P20_00633 and A-TIC-646-UGR20. F. Pasadas acknowledges funding from PAIDI 2020 and the European Social Fund Operational Programme 2014–2020 no. 20804. A. Medina-Rull acknowledges the support of the MCIN/AEI/PTA grant, with reference PTA2020- 018250-I. J. Cuesta-Lopez acknowledges the FPU program FPU019/05132, and A. Toral-Lopez the support of Plan Propio of Universidad de Granada.

Data Availability Statement: The Verilog-A model for 2D EIS BioFETs is available from the corresponding author (fpasadas@ugr.es) upon reasonable request.



Apr 6, 2023

[Deadline] #TinyTapeout 3

Are you a #teacher and interested in microelectronics?
Visit https://tinytapeout.com/

#TinyTapeout and #SiliWiz are online tools you can use to learn how ASICs are designed, made and how they work. You can even get your designs affordably manufactured!

Matt Venn has some free slots for #TinyTapeout 3 for you and your students - just send him a DM to get started!

Deadline is 24th April! Apply today at https://tinytapeout.com/

Apr 5, 2023

ChatGPT leaking Samsung chip secrets is iceberg's tip (?)



from Twitter https://twitter.com/wladek60

April 05, 2023 at 11:10AM
via IFTTT