[paper] Circuit-Based Compact Model of Electron Spin Qubit

Mattia Borgarino

Circuit-Based Compact Model of Electron Spin Qubit

Special Issue Recent Advances in Silicon-Based RFIC Design;

Electronics 2022, 11(4), 526; 

DOI: 10.3390/electronics11040526

   
University of Modena and Reggio Emilia, Modena (IT)

Abstract: Today, an electron spin qubit on silicon appears to be a very promising physical platform for the fabrication of future quantum microprocessors. Thousands of these qubits should be packed together into one single silicon die in order to break the quantum supremacy barrier. Microelectronics engineers are currently leveraging on the current CMOS technology to design the manipulation and read-out electronics as cryogenic integrated circuits. Several of these circuits are RFICs, as VCO, LNA, and mixers. Therefore, the availability of a qubit CAD model plays a central role in the proper design of these cryogenic RFICs. The present paper reports on a circuit-based compact model of an electron spin qubit for CAD applications. The proposed model is described and tested, and the limitations faced are highlighted and discussed.

FIG: Compact model of the electron spin qubit.

Funding: This research received no external funding.

[paper] SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

Tianshi Liu¹, Hua Zhang¹, Sundar Babu Isukapati², Emran Ashik³, Adam J. Morgan², Bongmook Lee³, Woongje Sung², Ayman Fayed¹, Marvin H. White¹, and Anant K. Agarwal¹

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

IEEE Journal of the Electron Devices Society, vol. 10, pp. 129-138, 2022, 

DOI: 10.1109/JEDS.2022.315036

   
1 Department of Electrical & Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
2 College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY 12309, USA
3 Department of Electrical & Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA

Abstract: Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600 V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high-temperature and radioactive) environments compared to Si power ICs. This work presents the device characteristics, SPICE modeling, and SiC CMOS circuit demonstrations of the first two lots of the proposed SiC power IC technology. Level 3 SPICE models are created for the high-voltage lateral power MOSFETs and low-voltage CMOS devices. SiC ICs, such as the SiC CMOS inverter and ring oscillator, have been designed, packaged, and characterized. Proper operations of the circuits are demonstrated. The effects of the trapped interface charges on the characteristics of SiC MOSFETs and SiC ICs are also discussed.

FIG: Cross-sectional view of the SiC MOSFETs (lot2)

Acknowledgment The authors would like to thank the team at Analog Devices (ADI), Hillview facility for the fabrication of devices and Advanced Research Projects Agency-Energy (ARPA-E). The authors also thank D. Xing for providing the customized gate driver for the dynamic characterizations of the circuits

[paper] Multi-Segment TFT Compact Model for THz Applications

Xueqing Liu¹,Trond Ytterdal² and Michael Shur^1,3

Multi-Segment TFT Compact Model for THz Applications

Nanomaterials 2022, 12(5), 765; 

DOI: 10.3390/nano12050765

  
1 RPI, Troy, NY 12180, USA
2 Norwegian University of Science and Technology, Trondheim, Norway
3 Electronics of the Future, Inc., USA

Abstract: We present an update of the Rensselaer Polytechnic Institute (RPI) thin-film transistor (TFT) compact model. The updated model implemented in Simulation Program with Integrated Circuit Emphasis (SPICE) accounts for the gate voltage-dependent channel layer thickness, enables the accurate description of the direct current (DC) characteristics, and uses channel segmentation to allow for terahertz (THz) frequency simulations. The model introduces two subthreshold ideality factors to describe the control of the gate voltage on the channel layer and its effect on the drain-to-source current and the channel capacitance. The calculated field distribution in the channel is used to evaluate the channel segment parameters including the segment impedance, kinetic inductance, and gate-to-segment capacitances. Our approach reproduces the conventional RPI TFT model at low frequencies, fits the measured current–voltage characteristics with sufficient accuracy, and extends the RPI TFT model applications into the THz frequency range. Our calculations show that a single TFT or complementary TFTs could efficiently detect the sub-terahertz and terahertz radiation.

FIG: (a) quivalent circuit of the multi-segment SPICE model for TFT and
(b) equivalent circuit for each segment including leakage components

Acknowledgements: The work was supported by Office of Naval Research (N000141712976, Project Monitor Paul Maki).

[book] Computers, Computation and the Limits of Computability

Thomas B. Fowler (Author)
Computers, Computation and the Limits of Computability 

Paperback – English edition 7 Feb. 2022

Publisher: XZF Technical Publications (7 Feb. 2022)

Language: English

ISBN-10: 1734995211

ISBN-13: 978-1734995213

"When asking a simple question about quantum computing, we typically get fragmented answers relating to qubits, superposition and entanglement or new research findings. In Computers, Computation and the Limits of Computability Professor Thomas Fowler addresses the underlying quantum principles such as uncertainty, wholeness, and coherence while meticulously treating the fundamental concepts and key differences between analog-digital and quantum computers.—Inspiring and revelatory, filled with specific information this is an essential book forthe long awaited demystification of quantum computing' 

-- Paul Staubli Technology Consultant, (CH)

Global chip shortage may soon turn into an oversupply crisis

[https://t.co/duNVklIjpY] Global chip shortage may soon turn into an oversupply crisis #semi https://t.co/DyxCusVIhe

— Wladek Grabinski (@wladek60) Feb 28, 2022

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