Tianshi Liu1, Hua Zhang1, Sundar Babu Isukapati2, Emran Ashik3, Adam J. Morgan2, Bongmook Lee3, Woongje Sung2, Ayman Fayed1, Marvin H. White1, and Anant K. Agarwal1
SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology
IEEE Journal of the Electron Devices Society, vol. 10, pp. 129-138, 2022,
DOI: 10.1109/JEDS.2022.315036
1 Department of Electrical & Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
2 College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY 12309, USA
3 Department of Electrical & Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA
Abstract: Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600 V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high-temperature and radioactive) environments compared to Si power ICs. This work presents the device characteristics, SPICE modeling, and SiC CMOS circuit demonstrations of the first two lots of the proposed SiC power IC technology. Level 3 SPICE models are created for the high-voltage lateral power MOSFETs and low-voltage CMOS devices. SiC ICs, such as the SiC CMOS inverter and ring oscillator, have been designed, packaged, and characterized. Proper operations of the circuits are demonstrated. The effects of the trapped interface charges on the characteristics of SiC MOSFETs and SiC ICs are also discussed.
FIG: Cross-sectional view of the SiC MOSFETs (lot2)
Acknowledgment The authors would like to thank the team at Analog Devices (ADI), Hillview facility for the fabrication of devices and Advanced Research Projects Agency-Energy (ARPA-E). The authors also thank D. Xing for providing the customized gate driver for the dynamic characterizations of the circuits
