Oct 30, 2020

[PhD Thesis] III-V MOS-HEMTs for 100-340GHz Communications Systems

UNIVERSITY OF CALIFORNIA
Santa Barbara
III-V InxGa1-xAs / InP MOS-HEMTs for 100-340GHz Communications Systems
A dissertation for PhD degree in Electrical and Computer Engineering
by Brian David Markman

Abstract: This work summarizes the efforts made to extend the current gain cutoff frequency of InP based FET technologies beyond 1THz. Incorporation of a metal-oxide-semiconductor field effect transistor (MOSFET) at the intrinsic Gate Insulator-Channel interface of a standard high electron mobility transistor (HEMT) has enabled increased gm,i by increasing the gate insulator capacitance density for a given gate current leakage density. Reduction of RS,TLM from 110 Ω.μm to 75Ω.μm and Ron(0) from 160Ω.μm to 120Ω.μm was achieved by removing/thinning the wide bandgap modulation doped link regions beneath the highly doped contact layers. Process repeatability was improved by developing a gate metal first process and Dit was improved by inclusion of a post-metal H2 anneal. InxGa1-xAs / InAs composite quantum wells clad with both InP and InxAl1-xAs were developed for high charge density and low sheet resistance to minimize source resistance. 
Figure a) InP-based HEMT b) III-V DC optimized MOSFET c) proposed InP-based MOS-HEMT

[Citation] Markman, B. D. (2020). III-V InxGa1-xAs / InP MOS-HEMTs for 100-340GHz Communications Systems. UC Santa Barbara. ProQuest ID: Markman_ucsb_0035D_14853. Merritt ID: ark:/13030/m5v4681j. Retrieved from https://escholarship.org/uc/item/6st812pb

Oct 29, 2020

#Congratulations to Dr. Arokia Nathan J.J. Ebers Award winner



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October 29, 2020 at 08:49AM
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Fwd: Patrick Fay DL - III-N Nanowire FETs for Low-Power Applications

Patrick Fay DL - III-N Nanowire FETs for Low-Power Application

The EDS Germany Chapter and NanoP proudly presents Patrick Fay from University of Notre Dame, Indiana, USA
for a Distinguished Lecture on "III-N Nanowire FETs for Low-Power Applications". The lecture will be held on
23th November 2020 at 3pm Berlin time.  To view complete details for this event, click here to view the announcement

Date and Time

Location

The Distiguished Lecture will be held via Zoom. Login information provided before the event and requires registration.

  • Virtual
  • Germany
Staticmap?size=250x200&sensor=false&zoom=14&markers=51.53771465%2c7

Hosts

Registration <https://events.vtools.ieee.org/m/245747>

  • Starts 29 October 2020 08:00 AM
  • Ends 21 November 2020 12:00 AM
  • All times are Europe/Berlin
  • No Admission Charge

Oct 28, 2020

EDTM 2021, Chengdu (CN): March 9-12, 2021

EDTM Conference 2021, Chengdu, China, between March 9th to 12th, 2021
Paper Submission Deadline: November 7 2020

 

IEEE LOGOEDS LOGO

EDTM2021 LOGO

The IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021 is a four-day meeting to be held in Chengdu, China, during March 9th to 12th, 2021. Sponsored by IEEE Electron Devices Society (EDS), EDTM2021 is a premier conference, providing a unique forum for discussions on a broad range of device/manufacturing-related topics. EDTM2021 starts on Tuesday, March 9, 2021 with Tutorial & Short Courses, followed by three days of Plenary talks and parallel Oral sessions. Joint Poster sessions and Exhibition will be held on the same site.

EDTM2021 Theme: Intelligent Technologies for Smart and Connected Life.

CHENGDU PHOTO

▪ Technical Areas

EDTM2021 solicits papers in all areas of electron devices, including materials, processes, devices, packaging, modeling, reliability, manufacturing and yield, tools, testing, and any emerging device technologies.

EDTM2021 cordially invites authors to submit your papers.

Please refer to the EDTM2021 website for more details, or clink links below:

EDTM2021 website: https://ewh.ieee.org/conf/edtm/2021/

Call for Papers

▪ Sponsorship & Exhibition

EDTM2021 also warmly invites sponsors and exhibitors to participate in and support the conference where you can showcase your new technologies and products to attendees from around the world.

Call for Sponsorship

Call for Exhibitors

▪ Awards

EDTM2021 will select Best Paper Award, Best Student Paper Award and Best Poster Paper Award.

▪ Publications

All selected and presented papers will be included in the EDTM2021 Proceedings that will be published at the IEEE Xplore. Selected papers will be invited to submit the extended manuscripts that will be reviewed for possible publication in the IEEE Journals of Electron Devices Society (J-EDS), which is an Open Access journal.

▪ Important Dates

Paper Submission Starts

August 1, 2020

Paper Submission Deadline

November 7 2020  

Notification of Acceptance

December 20, 2020

EDTM2021 Conference

March 9 - 12, 2021

▪ Location

Chengdu, located in southwest of China, is not just the home for Grand Pandas. An emerging technology and business hub full of hi-tech companies from around the world, it is also a trendy city where you will find everything that you could imagine for you to enjoy your leisure time, from the famous Sichuan food to mind-soothing teas to natural scenics to historical wonders. The wonderful city is just an easy flight away from many places around the Globe.

▪ Contacts

General Chair:
Albert Wang, University of California, Riverside,
aw@ece.ucr.edu

General Co-Chair:
Tianchun Ye, IME-CAS,
tcye@ime.ac.cn

TPC Chair:
Huaqiang Wu, Tsinghua University,
wuhq@tsinghua.edu.cn

TPC Co-Chair:
Subramanian Iyer, University of California, Los Angeles,
s.s.iyer@ucla.edu

COVID-19 Watch: Chengdu remains safe. EDTM2021 is planned as an in-person/on-site event. Meanwhile, we are closely monitoring the development of global COVID-19 outbreak. A contingency plan will allow virtual presentations and participation for those with travel restrictions and concerns. Both safety and participation experiences will be ensured for EDTM2021.

PANDA PHOTO

EDTM2021 website: https://ewh.ieee.org/conf/edtm/2021/

 

 

 

The Future of CERN’s Large Hadron Collider For Humanity a Necessity or a Waste? https://t.co/xzCoofmtBN #semi https://t.co/O7vWjmFloj



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October 28, 2020 at 11:03AM
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