UNIVERSITY OF CALIFORNIA
Santa Barbara
III-V InxGa1-xAs / InP MOS-HEMTs for 100-340GHz Communications Systems
A dissertation for PhD degree in Electrical and Computer Engineering
by Brian David Markman
Abstract: This work summarizes the efforts made to extend the current gain cutoff frequency of InP based FET technologies beyond 1THz. Incorporation of a metal-oxide-semiconductor field effect transistor (MOSFET) at the intrinsic Gate Insulator-Channel interface of a standard high electron mobility transistor (HEMT) has enabled increased gm,i by increasing the gate insulator capacitance density for a given gate current leakage density. Reduction of RS,TLM from 110 Ω.μm to 75Ω.μm and Ron(0) from 160Ω.μm to 120Ω.μm was achieved by removing/thinning the wide bandgap modulation doped link regions beneath the highly doped contact layers. Process repeatability was improved by developing a gate metal first process and Dit was improved by inclusion of a post-metal H2 anneal. InxGa1-xAs / InAs composite quantum wells clad with both InP and InxAl1-xAs were developed for high charge density and low sheet resistance to minimize source resistance.
Figure a) InP-based HEMT b) III-V DC optimized MOSFET c) proposed InP-based MOS-HEMT
[Citation] Markman, B. D. (2020). III-V InxGa1-xAs / InP MOS-HEMTs for 100-340GHz Communications Systems. UC Santa Barbara. ProQuest ID: Markman_ucsb_0035D_14853. Merritt ID: ark:/13030/m5v4681j. Retrieved from https://escholarship.org/uc/item/6st812pb
