#paper: L. Liu, W. Chen, X. Liu and G. Du, "Photoelectric Characteristic Evaluation of Different Structured UTBB MOSFETs," in IEEE TED, vol. 67, no. 5, pp. 1919-1923, May 2020 https://t.co/2onkfigdMS https://t.co/XWNv6uZML9

#paper: L. Liu, W. Chen, X. Liu and G. Du, "Photoelectric Characteristic Evaluation of Different Structured UTBB MOSFETs," in IEEE TED, vol. 67, no. 5, pp. 1919-1923, May 2020https://t.co/2onkfigdMS pic.twitter.com/XWNv6uZML9

— Wladek Grabinski (@wladek60) April 24, 2020

from Twitter https://twitter.com/wladek60

April 24, 2020 at 05:49PM
via IFTTT

Online Classes on The Principle of Semiconductor Devices

Professor Mansun Chan, UST (HK), has developed a 13 weeks online class on the principle of semiconductor devices.  Unlike tradition lectures, the class use extensive animations to help students to visualize the actions of carriers in a device.  The classes was divided into two part, part I on semiconductor carrier statistics, PN Junction, BJT and part II on MOSFET and advanced FET.

• Principle of Semiconductor Devices Part I: Semiconductors, PN Junctions and Bipolar Junction Transistors
  An intuitive approach to operational principles of semiconductor devices.The course covers PN junction diodes, optical sensors, solar cells, LEDs, and Bipolar Junction Transistors.
  https://www.edx.org/course/principle-of-semiconductor-devices-part-i-semiconductors-pn-junctions-and-bipolar-junction-transistors-1
• Principle of Semiconductor Devices Part II: Field Effect Transistors and MOSFETsAn intuitive approach to operational principles of semiconductor devices. The course covers MOS capacitors, charge coupled devices, classical MOSFETs, transistor scaling, short channel MOSFET, and nano-CMOS transistors.
  https://www.edx.org/course/principle-of-semiconductor-devices-part-ii-field-effect-transistors-and-mosfets-2

Meet your instructor:

Mansun Chan

Chair Professor, Department of Electronic and Computer Engineering

The Hong Kong University of Science and Technology

The Hong Kong University of Science and Technology

conference FOSS paper reached 300 reads

D. Tomaszewski, G. Głuszko, M. Brinson, V. Kuznetsov and W. Grabinski, "FOSS as an efficient tool for extraction of MOSFET compact model parameters," 2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems, Lodz, 2016, pp. 68-73.

Abstract - A GNU Octave - based application for device-level compact model evaluation and parameter extraction has been developed. The applications main features are as follows: experimental I–V data importing, generating input data for different circuit simulation programs, running the simulation program to calculate I–V characteristics of the specified models, calculating model misfit and its sensitivity to selected parameter variation, and the comparison of experimental and simulated characteristics. Measured I–V data stored by different measurement systems are accepted. Circuit simulations may be done with Ngspice, Qucs and LTSpiceIV © . Selected aspects of the application are presented and discussed.

Pokit PRO. Multimeter, Oscilloscope & Logger https://t.co/m65iiW8ckl #paper https://t.co/qAYsVIiW7m

Pokit PRO. Multimeter, Oscilloscope & Logger https://t.co/m65iiW8ckl #paper pic.twitter.com/qAYsVIiW7m

— Wladek Grabinski (@wladek60) April 20, 2020

from Twitter https://twitter.com/wladek60

April 20, 2020 at 02:23PM
via IFTTT

#paper: J. Li, Z. Chen, Y. Qu and R. Zhang, "Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices," in IEEE J-EDS, vol. 8, pp. 350-357, 2020 https://t.co/zD5bzZH2cN https://t.co/g7qcnAGtjM

#paper: J. Li, Z. Chen, Y. Qu and R. Zhang, "Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices," in IEEE J-EDS, vol. 8, pp. 350-357, 2020https://t.co/zD5bzZH2cN pic.twitter.com/g7qcnAGtjM

— Wladek Grabinski (@wladek60) April 20, 2020

from Twitter https://twitter.com/wladek60

April 20, 2020 at 10:49AM
via IFTTT