conference FOSS paper reached 300 reads

D. Tomaszewski, G. Głuszko, M. Brinson, V. Kuznetsov and W. Grabinski, "FOSS as an efficient tool for extraction of MOSFET compact model parameters," 2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems, Lodz, 2016, pp. 68-73.

Abstract - A GNU Octave - based application for device-level compact model evaluation and parameter extraction has been developed. The applications main features are as follows: experimental I–V data importing, generating input data for different circuit simulation programs, running the simulation program to calculate I–V characteristics of the specified models, calculating model misfit and its sensitivity to selected parameter variation, and the comparison of experimental and simulated characteristics. Measured I–V data stored by different measurement systems are accepted. Circuit simulations may be done with Ngspice, Qucs and LTSpiceIV © . Selected aspects of the application are presented and discussed.

Pokit PRO. Multimeter, Oscilloscope & Logger https://t.co/m65iiW8ckl #paper https://t.co/qAYsVIiW7m

Pokit PRO. Multimeter, Oscilloscope & Logger https://t.co/m65iiW8ckl #paper pic.twitter.com/qAYsVIiW7m

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April 20, 2020 at 02:23PM
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#paper: J. Li, Z. Chen, Y. Qu and R. Zhang, "Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices," in IEEE J-EDS, vol. 8, pp. 350-357, 2020 https://t.co/zD5bzZH2cN https://t.co/g7qcnAGtjM

#paper: J. Li, Z. Chen, Y. Qu and R. Zhang, "Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices," in IEEE J-EDS, vol. 8, pp. 350-357, 2020https://t.co/zD5bzZH2cN pic.twitter.com/g7qcnAGtjM

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April 20, 2020 at 10:49AM
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#paper: D. Arbet, L. Nagy, V. Stopjakova "Ultra-Low-Voltage IC Design Methods" Integrated Circuits/Microchips, 2020 | IntechOpen https://t.co/QuPlCt45YH https://t.co/XsJrid4jC7

#paper: D. Arbet, L. Nagy, V. Stopjakova "Ultra-Low-Voltage IC Design Methods" Integrated Circuits/Microchips, 2020 | IntechOpen https://t.co/QuPlCt45YH pic.twitter.com/XsJrid4jC7

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April 20, 2020 at 09:21AM
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#paper: W. Cheng et al., "Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current," in IEEE J-EDS Society, vol. 8, pp. 336-340, 2020 https://t.co/BQAZV3tf3C https://t.co/Eqw9tGmBDI

#paper: W. Cheng et al., "Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current," in IEEE J-EDS Society, vol. 8, pp. 336-340, 2020
https://t.co/BQAZV3tf3C pic.twitter.com/Eqw9tGmBDI

— Wladek Grabinski (@wladek60) April 15, 2020

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April 15, 2020 at 05:30PM
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