#paper: A. Yesayan, F. Jazaeri and J. Sallese, "Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs," in IEEE TED, vol. 67, no. 3, pp. 1157-1164, March 2020 doi: 10.1109/TED.2020.2965167 https://t.co/ZQqam0Idam https://t.co/fLVyDK5rfB

#paper: A. Yesayan, F. Jazaeri and J. Sallese, "Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs," in IEEE TED, vol. 67, no. 3, pp. 1157-1164, March 2020
doi: 10.1109/TED.2020.2965167 https://t.co/ZQqam0Idam pic.twitter.com/fLVyDK5rfB

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#paper M. H. Mohamed Sathik, P. Sundararajan, F. Sasongko, J. Pou and S. Natarajan, "Comparative Analysis of IGBT Parameters Variation Under Different Accelerated Aging Tests," in IEEE TED, vol. 67, no. 3, pp. 1098-1105 doi: 10.1109/TED.2020.2968617 https://t.co/pcQI7dpLeO https://t.co/9Sz1Vqnaf2

#paper M. H. Mohamed Sathik, P. Sundararajan, F. Sasongko, J. Pou and S. Natarajan, "Comparative Analysis of IGBT Parameters Variation Under Different Accelerated Aging Tests," in IEEE TED, vol. 67, no. 3, pp. 1098-1105
doi: 10.1109/TED.2020.2968617 https://t.co/pcQI7dpLeO pic.twitter.com/9Sz1Vqnaf2

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#paper: W. Chen, J. Cheng and X. B. Chen, "A Novel IGBT With High-k Dielectric Modulation Achieving Ultralow Turn-Off Loss," in IEEE TED, vol. 67, no. 3, pp. 1066-1070, March 2020 doi: 10.1109/TED.2020.2964879 https://t.co/uoh7n0NYFa https://t.co/wdqFNSMBur

#paper: W. Chen, J. Cheng and X. B. Chen, "A Novel IGBT With High-k Dielectric Modulation Achieving Ultralow Turn-Off Loss," in IEEE TED, vol. 67, no. 3, pp. 1066-1070, March 2020
doi: 10.1109/TED.2020.2964879https://t.co/uoh7n0NYFa pic.twitter.com/wdqFNSMBur

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[paper] Charge-based Modeling of Ultra Narrow Cylindrical Nanowire FETs

Charge-based Modeling of Ultra Narrow Cylindrical Nanowire FETs 

Danial Shafizade, Majid Shalchian and Farzan Jazaeri

IEEE TED, Vol. XX, No. XX, 15 March 2020

Abstract: This brief proposes an analytical approach to model the dc electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistor (JLNW-FET). The model includes explicit expressions, taking into account the first order perturbation theory for calculating eigenstates and corresponding wave functions obtained by the Schrodinger equation in the cylindrical coordinate. Assessment of the proposed model with technology computer-aided design (TCAD) simulations and measurement results confirms its validity for all regions of operation. This represents an essential step toward the analysis of circuits mainly biosensors based on junctionless nanowire transistors.

MicroTec: Semiconductor Process and Device Simulator

Software Package for 2D Process and Device Simulation

Version 4.0 for Windows

User’s Manual

Publisher: Siborg Systems Inc

Editor: Michael S. Obrecht

MicroTec allows 2D silicon process modeling including implantation, diffusion and oxidation and 2D steady-state semiconductor device simulation like MOSFET, DMOS, JFET, BJT, IGBT, Schottky, photosensitive devices etc. Although MicroTec is significantly simplified compared to widely available commercial simulators, it nevertheless is a very powerful modeling tool for industrial semiconductor process/device design. In many instances MicroTec outperforms existing commercial tools and it is remarkably robust and easy-to-use.

FIG: MicroTec SibGraf GUI windows