Joint Chapter of Electron Devices and Circuits and Systems Societies (ED/CAS)
presents
IEEE Electron Devices Mini Colloquia
Date: Sunday, 24 February 2019 Time: 3.00 P.M to 6.00 P.M
Venue: Hotel Plaza, Begumpet. Free Registration Link
For any further details please contact the MQ Coordinators:
- Dr. Mohammed Arifuddin Sohel, Chair, IEEE CAS/EDS joint Chapter
- Dr. A.G. Krishna Kanth, Vice Chair, IEEE CAS/EDS joint Chapter
Registrations: 3:00PM to 3.15 PM
DL Talk 1: 3.15 PM to 4.00PM, Speaker: Prof. Charvaka Duvvury, iT2 Technologies (USA)
Topic: ESD Issues and Challenges for Advanced Semiconductor Technologies
DL Talk 1: 3.15 PM to 4.00PM, Speaker: Prof. Charvaka Duvvury, iT2 Technologies (USA)
Topic: ESD Issues and Challenges for Advanced Semiconductor Technologies
Electro-static Discharge (ESD) has been a constant reliability concern for IC technologies for several decades and it is heading to be a roadblock to newer applications for electronic devices. The seminar will begin with a summary of the understanding about ESD and how this is applied to develop protection at the IC level for Digital, Analog, and RF circuits. This will be followed by a review of the problems posed by advanced technologies beyond the 32 nm node and the corresponding challenge of hitting the available ESD design window while meeting the IO high-speed performance requirements. The talk will conclude with a survey of the upcoming challenges from emerging technologies such as GaN and CNT, as well as IoT applications.
Speaker Bio: Charvaka Duvvury was a Texas Instruments fellow while he worked in the Silicon Technology Development group at TI. He received his PhD in engineering science from the University of Toledo and afterwards worked as a post-doctoral fellow in Physics at the University of Alberta. His experience at Texas Instruments spanned for 35 years in semiconductor device physics with pioneering development work in ESD design. He has also mentored PhD students at several leading US universities on their investigations in ESD research and received Outstanding Industry Mentor Award twice from the SRC. Charvaka has published over 150 papers in technical journals and conferences and holds more than US 75 patents. He co-authored and contributed to 5 books on the subject. He is a recipient of the IEEE Electron Devices Society’s Education Award and Outstanding Contributions Award from the EOS/ESD Symposium. Charvaka has been serving on Board of Directors of the ESD Association (ESDA) since 1997 promoting ESD education and research at academic institutes. He is co-founder and co-chair of the Industry Council on ESD since 2006. During 2015 he became a co-founder of the iT2 Technologies that utilizes software engine and machine learning for rapid ESD data analysis. Charvaka is also Fellow of the IEEE.
Hi Tea and Networking: 4.00 PM to 4.15 PM
DL Talk 2: 4.15 PM to 5.00PM Speaker: Dr. Wladek Grabinski, MOS-AK (Switzerland)
Topic: FOSS TCAD/EDA Process/Device Simulations for Compact/SPICE Modeling
Compact/SPICE models of circuit elements (passive, active, MEMS, RF) are essential to enable advanced IC design using nanoscaled semiconductor technologies. To explore all related interactions, we are discussing selected FOSS CAD tools along complete technology/design tool chain from nanascaled technology processes. New technology and device development will be illustrated by application examples of the FOSS TCAD tools: Cogenda TCAD and DEVSIM. Compact modeling will be highlighted by review topics related to its parameter extraction and standardization of the experimental and measurement data exchange formats. Finally, we will present FOSS CAD simulation and design tools: ngspice, Qucs, GnuCap, Xyce.
Speaker Bio: Wladek Grabinski received the Ph.D. degree from the Institute of Electron Technology, Warsaw, Poland, in 1991. From 1991 to 1998 he was a Research Assistant at the Integrated Systems Lab, ETHZ, Switzerland, supporting the CMOS and BiCMOS technology developments by electrical characterization of the processes and devices. From 1999 to 2000, he was with LEG, EPFL, and was engaged in the compact MOSFET model developments supporting numerical device simulation and parameter extraction. Later, he was a technical staff engineer at Motorola, and subsequently at Freescale Semiconductor, Geneva Modeling Center, Switzerland. He is now a consultant responsible for modeling, characterization and parameter extraction of MOST devices for the IC design. Wladek is the chair of the ESSDERC Track4: "Device and circuit compact modeling" as well as has served as a member of organization committee of ESSDERC/ESSDERC, TPC of SBMicro, SISPAD, MIXDES Conferences; reviewer of the IEEE TED, IEEE MWCL, IJNM, MEE, MEJ/ Wladek is involved in activities of the MOS-AK Association and serves as a coordinating manager since 1999.
DL Talk 3: 5.00PM to 5.45 PM Speaker: Prof. Roberto Murphy, INAOE (Mexico)
Topic: Fundamental Aspects of CMOS RF Modeling and Characterization
As CMOS technology evolves, higher frequencies can be attained while more complex functions and operations become possible in Integrated Circuits. At the design stage, there are several fundamental aspects which have to be taken into account in order to have successful fabrication results, the closest to simulation predictions as possible. Furthermore, this evolution leads to more time-consuming characterization routines, which require both personnel and time to be performed. Some of the aspects dealt with in this talk refer to characterization techniques, substrate network effects, and geometry effects.
Speaker Profile: Roberto S. Murphy-Arteaga (M´92, SM´02) received his B.Sc. degree in Physics from St. John’s University, Minnesota, and got his M.Sc. and Ph.D. degrees from the National Institute for Research on Astrophysics, Optics and Electronics (INAOE), in Tonantzintla, Puebla, México. He has been a researcher at INAOE since 1988. Since then, he has presented over 110 talks at scientific conferences, directed nine Ph.D. theses, 16 M.Sc. and 2 B.Sc. theses, published more than 140 articles in scientific journals, conference proceedings and newspapers, and is the author of a text book on Electromagnetic Theory. He is currently a senior researcher with the Microelectronics Laboratory. Dr. Murphy’s research interests are the physics, modeling and characterization of the MOS Transistor and passive components for high frequency applications, especially for CMOS wireless circuits, and antenna design. For the last 30 years, he has been active in the organization of conferences, mostly in Latin America, such as the IEEE International Caribbean Conference on Devices, Circuits and Systems; the Latin American Symposium on Circuits and Systems; VLSI-SoC, and others related to microelectronics and IC design. He is a Senior Member of IEEE, a Distinguished Lecturer of the Electron Devices Society, the President of ISTEC, a member of the Mexican Academy of Sciences, and a member of the Mexican National System of Researchers (SNI).
