[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V https://t.co/XQsatKslTX
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October 26, 2016 at 05:03PM
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Oct 26, 2016
[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V https://t.co/XQsatKslTX
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October 26, 2016 at 05:03PM
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[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V
[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V
— Wladek Grabinski (@wladek60) October 26, 2016
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Oct 25, 2016
Transistor Sizing for Bias-Stress Instability Compensation in Inkjet-Printed Organic C-Inverters https://t.co/91uJURy3KA #papers
Transistor Sizing for Bias-Stress Instability Compensation in Inkjet-Printed Organic C-Inverters https://t.co/91uJURy3KA #papers
— Wladek Grabinski (@wladek60) October 25, 2016
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[ESSDERC Paper] Compact model for variability of low frequency noise due to number fluctuation effect
Compact model for variability of low frequency noise due to number fluctuation effect
N. Mavredakis and M. Bucher
2016 46th European Solid-State Device Research Conference (ESSDERC)
Lausanne, Switzerland, 2016, pp. 464-467
Abstract: Variability of low frequency noise (LFN) in MOSFETs is both geometry- and bias-dependent. RTS noise prevails in smaller devices where noise deviation is mostly area-dominated. As device dimensions increase, operating conditions determine noise variability maximizing it in weak inversion and increasing it with drain voltage. This dependence is shown to be directly related with fundamental carrier number fluctuation effect. A new bias- and area-dependent, physics-based, compact model for 1/f noise variability is proposed. The model exploits the log-normal behavior of LFN. The model is shown to give consistent results for average noise, variance, and standard deviation, covering bias-dependence and scaling over a large range of geometry.
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7599686&isnumber=7598672
Oct 24, 2016
[SSE Paper] Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements
Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements
Daniel Tomaszewskia, Grzegorz Głuszkoa, Lidia Łukasiakb,
Krzysztof Kucharskia, Jolanta Malesinskab
Krzysztof Kucharskia, Jolanta Malesinskab
aDivision of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), ul. Okulickiego 5E, 05-500 Piaseczno, Poland
bInstitute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland
Abstract: An alternative method for an extraction of the MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior as a function of the gate-source voltage. The effect of the channel current on the threshold voltage extraction is fully eliminated. For the threshold voltage and junction capacitance model parameters non-iterative methods have been used. The proposed method has been demonstrated using a series of MOS transistors manufactured using a standard CMOS technology.
Keywords: MOSFET CMOS Threshold voltage Junction capacitance Parameter extraction
Cite: Tomaszewski D et al. Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements. Solid State Electron (2016), http://dx.doi.org/10.1016/j.sse.2016.10.006
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