Jun 15, 2016

[book] Compact Models for Integrated Circuit Design

 Compact Models for Integrated Circuit Design: 
 Conventional Transistors and Beyond
 Samar K. Saha
Taylor & Francis, 26 Aug 2015 - Technology & Engineering - 545 pages - ISBN 9781482240665

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices.
Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text:
  • Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models
  • Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models
  • Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis
  • Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices
  • Includes exercise problems at the end of each chapter and extensive references at the end of the book

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book. [more...]

Jun 13, 2016

Programme of the 4th Training Course on Compact Modeling

The 4th Training Course on Compact Modeling (TCCM) will take place in Tarragona (Catalonia, Spain) from June 27 to 28 2016.

The 4th TCCM is partially sponsored by the DOMINO EU H2020 project. It will consist a series of lectures conducted by prestigious researchers in the field of modeling of semiconductor devices, dealing with several issues related to the semiconductor device modeling, mostly compact/SPICE modeling. It is a very interesting event to PhD students and young researchers, but can interest senior researchers too. These lectures will be conducted by top experts in the field. 

No doubt the 4th TCCM will be useful to researchers working on compact modeling, but also to researchers working on circuit design, numerical modeling, device characterization and semiconductor device technology.

TCCM is organized by the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV), in Tarragona. The General Chair of TCCM is Prof. Benjamin Iñiguez, who is also the Coordinator of the DOMINO project.

Programme of TCCM:

June 27 2016

8:30
Opening
Benjamin Iñiguez (Universitat Rovira i Virgili)
8:55
"Compact modeling for biological applications".
Morgan Madec (Université de Strasbourg, France)
10:05
"TCAD and semiclassical device modeling"
 Christoph Jungemann (RWTH-AAchen, Germany)
11:15
Coffe Break
11:40
"Modeling and experimental verification of mechanical stress effects in  ultra-thin Si MOSFET devices integrated into flexible packages. "
Heidrun Alus (AdMOS GmbH, Germany)
12:50
"Device simulation for Organic Electronics using GENIUS"
Heinz Olav Müller (Plastic Logic GmbH, Germany))
14:00
Lunch
15:15
"TCAD for compact model development"
Ahmed Nejim (Silvaco Europe Ltd. , UK)
16:25
"Modelling of Amorphous-Oxide-Semiconductors TFTs for large-area flexible electronics"
Fabrizio Torricelli (University of Brescia, Italy)
20:30
Gala Dinner


June 28 2016

8:45-14:00  Mini-Colloquium on Compact Modeling and Parameter Extraction
8:45
"An Integrated Approach for Circuit Performance and Reliability Simulation"
Mansun Chan (Hong Kong University of Science and Technology)
9:55
"Static and dynamic characterization of SiC based MOSFETs/IGBTs"
Muhammad Nawaz (ABB Sweden)
11:05
Coffee Break
11:30
“Model parameter extraction”
Antonio Cerdeira (CINVESTAV Mexico)
12:50
"Compact modeling for AlGaN/GaN HEMTs"
Benjamin Iñiguez (URV)
14:00
Lunch
15:15
"Application of compact models for organic circuit design"
Eugenio Cantatore (TU-Eindhoven, The Netherlands)
16:25
« Mathematical and Semi-physical compact modeling for emerging technologies”
Firas Mohamed (Infiniscale, France)
17:35
End of the Training Course

Besides, on June 29 1016, the  Workshop on Flexible Electronics (WFE) will take place in Tarragona, too. Attendees to TCCM who work on Flexible Electronics (not necessarily modeling) will have a chance to present recent results on their own. But WFE is open to all researchers.


Registration to both events is open. It is possible to register only to TCCM, or only to WFE or to both. It is quite cheap, in partular for students, and includes lunches, coffee breaks, and in the case of TCCM, a gala dinner.

Finally, on June 30-July 1 the Annual Graduate Student Meeting on Electronic Engineering will be held, consisting of plenary talks by prestigious researchers and student presentations. Registration is free.



I encourage researchers on semiconductor devices and circuit design to attend TCCM!

Jun 11, 2016

Modeling and simulation of nanomagnetic logic with cadence virtuoso using Verilog-A https://t.co/J8R9fcdtDu #papers #feedly


from Twitter https://twitter.com/wladek60

June 11, 2016 at 01:22PM
via IFTTT

Jun 8, 2016

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects https://t.co/YanqSVXH3q #papers #feedly


from Twitter https://twitter.com/wladek60

June 08, 2016 at 01:44PM
via IFTTT

Jun 6, 2016

A novel approach for the modeling of HEMT high power device https://t.co/rDLgFItU1g #papers #feedly


from Twitter https://twitter.com/wladek60

June 06, 2016 at 06:38PM
via IFTTT