BSIMCMG is now the CMC industry standard FinFET SPICE model.

BSIMCMG is now the first industry standard FinFET SPICE model. It is available for download and use at the BSIM website. The voting took place in Jan'12 and the model was approved a standard at the March 1Q12 Osaka CMC Meeting. The CMC is yet to update their website.

FDSOI Workshop presentations available online

CEA-Leti, SOI Industry Consortium and Soitec want to make you aware that the presentations are now posted on the SOI Industry Consortium website:

http://www.soiconsortium.org/corners/fully-depleted-soi/february-2012/index.php

SISPAD'2012 - Second call for papers

Call for Papers

The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of the leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.

Date and Location

• Conference date: September 5-7, 2012
• Abstract submission deadline: April 1, 2012
• Conference location: Sheraton Denver Downtown Hotel, Denver, Colorado, USA
• Webpage: http://www.ece.umd.edu/sispad2012

Topics Original papers are solicited in the following subject areas: Electronic Transport in Semiconductor Materials and Devices Device Modeling and Simulation Sensors, Biosensors and Electromechanical Systems Simulation Process and Equipment Modeling and Simulation Compact Models Physical-Level Circuit Simulation New Algorithms for Process and Device Modeling Simulation of Nano and Quantum Devices User Interfaces and Visualization Simulation of Power Devices Photovoltaics and Other Green Technologies

The abstract should describe the nature of the presentation, together with references. The text must be single-spaced with 11pt or 12pt font. The abstract is limited to two pages including figures, tables and references. Abstracts should be submitted in PDF format.

For more information, please visit:

http://www.ece.umd.edu/sispad2012/

NDES 2012 July 11 – 13, 2012, Wolfenbüttel, Germany

The conference aims at stimulating and enabling scientists from all over the world to exchange know-ledge and ideas in the field of nonlinear dynamics and its applications in a friendly atmosphere. Nonlinear phenomena are observed in diverse areas such as physics, biology, economics, electronics and computer science. The conference will cover cutting-edge research in these highly active fields and explore new perspectives of nonlinear dynamics in interdisciplinary applications. The scope of interest includes, but it is not limited to:

• Theory, analysis, modelling, implementations and applications of nonlinear circuits and systems in science, technology and biology
• Nonlinear network analysis
• Neural networks, neurodynamics, robots 
• Nonlinear signal processing: Time-series analysis, communication, coding
• Nonlinear devices: Sensors, lasers
• Bifurcation and chaos, control and synchronisation
• Geodynamics

Wolfgang Mathis (Conference Chair, Organizing Committee)
Ruedi Stoop (Conference Co-Chair, Organizing Committee)

[read more...]

Papers in March 2012

SP-HV: A Scalable Surface-Potential-Based Compact Model for LDMOS Transistors

Yao, W.  Gildenblat, G.  McAndrew, C. C.  Cassagnes, A. 
Abstract | Full Text: PDF (435KB) 

Applicability of Macroscopic Transport Models to Decananometer MOSFETs

Vasicek, M.  Cervenka, J.  Esseni, D.  Palestri, P.  Grasser, T. 

Abstract | Full Text: PDF (790KB) 

Physics-Based Modeling of GaN HEMTs

Vitanov, S.  Palankovski, V.  Maroldt, S.  Quay, R.  Murad, S.  Rodle, T.  Selberherr, S.

Abstract | Full Text: PDF (1220KB) 

A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias

Jan, S.-R.  Chou, T.-P.  Yeh, C.-Y.  Liu, C. W.  Goldstein, R. V.  Gorodtsov, V. A.  Shushpannikov, P. S. 
Abstract | Full Text: PDF (849KB) 

 

 

A Subthreshold Swing Model for Thin-Film Fully Depleted SOI Four-Gate Transistors

Sayed, S.  Hossain, M. I.  Khan, M. Z. R. 
Abstract | Full Text: PDF (138KB) 

 

 

Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions

Markov, S.  Cheng, B.  Asenov, A. 
Abstract | Full Text: PDF (403KB) 

 

 

The Compact Modeling of Channel Potential in Sub-30-nm NAND Flash Cell String

Kang, M.  Lee, K.  Chae, D. H.  Park, B.-G.  Shin, H. 
Abstract | Full Text: PDF (384KB) 

 

 

Measurement of Source Resistance in Top-Contact Organic Thin-Film Transistors

Singh, V. K.  Agrawal, A. K.  Mazhari, B. 
Abstract | Full Text: PDF (249KB) 

 

 

 

Demystifying Surrogate Modeling for Circuits and Systems

Yelten, M.B.  Zhu, T.  Koziel, S.  Franzon, P.D.  Steer, M.B. 
Abstract | Full Text: PDF (1492KB) 

 

 

 

Teaching Memory Circuit Elements via Experiment-Based Learning

Pershin, Y.V.  Ventra, M.D. 
Abstract | Full Text: PDF (1655KB)