Bucher, M., J-M. Sallese, F. Krummenacher, D. Kazazis, C. Lallement, W. Grabinski, and C. Enz
EKV 3.0: An analog design-oriented MOS transistor model
In 9th International Conference on Mixed Design of Integrated Circuits and Systems
(MIXDES 2002)
Abstract: The EKV 3.0 compact MOS transistor model for advanced analog IC design and simulation is presented. The model is based on the surface potential approach combined with inversion charge linearization. The ideal long-channel model is coherent for static and dynamic aspects including noise. The ideal model is extended for high-field effects in deep submicron CMOS technologies. Scalability over channel length and width is achieved while retaining a reduced number of parameters. The EKV 3.0 model is applicable over a large range of CMOS technologies.
Fig: Normalized source transconductance to current ratio (gm/ID) vs. normalized current, measured
(markers) in saturation from various CMOS technologies, and analytical model.
