Deni Germano Alves Neto1, Cristina Missel Adornes1, Gabriel Maranhao1, Mohamed Khalil Bouchoucha2,3, Manuel J. Barragan3, Andreia Cathelin2, Marcio Cherem Schneider1, Sylvain Bourdel3 and Carlos Galup-Montoro1
A 5-DC-parameter MOSFET model for circuit simulation in QucsStudio and SPECTRE
2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
DOI: 10.1109/NEWCAS57931.2023.10198173
1 Federal University of Santa Catarina, Florianopolis (BR)
2 STMicroelectronics, Crolles (F)
3 Univ. Grenoble Alpes, CNRS, Grenoble INP, TIMA, Grenoble (F)
Abstract: A minimalist MOSFET model for circuit simulation with only five DC parameters written in Verilog-A is presented. The five parameters can be extracted from direct and simple methods in common circuit simulators. The DC characteristics of transistors in both 180-nm bulk CMOS and 28-nm FD-SOI technologies generated by the five-parameter model are compared with those generated by the BSIM and UTSOI2 models, respectively. The simulation of some basic circuits using the proposed 5-DC-parameter MOSFET model shows good matching with the simulation using the BSIM model, at the benefit of a much simpler set of DC parameters.
Fig: DC characteristic gm/ID vs. id used to extract ΞΆ.
REF:
[1] Advanced Compact MOSFET (ACM) in C. M. Adornes, D. G. Alves Neto, M. C. Schneider, and C. Galup-Montoro, “Bridging the gap between design and simulation of low voltage CMOS circuits,” Journal of Low Power Electronics and Applications, vol. 12, no. 2, 2022.
