D. Tanous, A. Mazurak and B. Majkusiak
Simulations of transient processes and characteristics of the nc-MOS structures
Microelectronic Engineering,
Volume 178, 2017, pp/ 173-177,
DOI: 10.1016/j.mee.2017.05.013
Abstract: Experimentally measured capacitance-voltage and current-voltage characteristics of the metal-insulator-semiconductor structures with nanocrystals embedded in the insulator often exhibit formations which result from charging/discharging processes of the nanocrystals and are difficult to explain and predict intuitively. Time dependent simulations as presented in this paper can be helpful in their analysis. The paper presents a study of the impact of selected geometrical parameters on their characteristics with the bias voltage ramp rate as a parameter.
FIG: a.) nc-MIS Structure; b.) Bias voltage ramp stimulation; c.) CV and IV Simulations results
