[paper] Review of AlGaN/GaN HEMTs Based Devices

Ahmed M. Nahhas

Review of AlGaN/GaN HEMTs Based Devices

American Journal of Nanomaterials. 2019, 7(1), 10-21

DOI: 10.12691/ajn-7-1-2

  

Department of Electrical Engineering, Umm Al Qura University, Makkah (SA)

Abstract: This paper presents a review of the recent advances of the AlGaN/GaN high-electron-mobility transistors (HEMTs) based devices. The AlGaN/GaN HEMTs have attracted potential for high frequency, voltage, power, temperature, and low noise applications. This is due to the superior electrical, electronic properties, high electron velocity of the GaN. These properties include the GaN wideband gap energy, electrical, optical and structural properties. The based structures of GaN such as AlGaN/GaN are driving the interest in the research areas of GaN HEMTs. Recently, the AlGaN/GaN HEMTs have gained a great potential in radio frequency (RF) and power electronics (PE) based devices and applications. The recent aspects of the AlGaN/GaN HEMTs devices are presented and discussed. The performance of different device demonstrated based on AlGaN/GaN HEMTs are reviewed. The structural, electrical, and optical properties of these devices are also reviewed.

Fig: Schematic of AlGaN/GaN HEMTs

[paper] Pseudo-morphic PHEMT: Numerical Simulation Study

Khaouani Mohammed, Hamdoune Abdelkader, Guen Ahlam Bouazza, Kourdi Zakarya, Hichem Bencherif

An Improved Performance of Al0.25Ga0.75N/AlN/GaN/Al0.25Ga0.75N Pseudo-morphic High Electron Mobility Transistor (PHEMT): 

Numerical Simulation Study

IC-AIRES 2021. Lecture Notes in Networks and Systems, vol 361. Springer

DOI: 10.1007/978-3-030-92038-8_80

1. Hassiba Benbouali, Chlef, Algeria

2. University of Abou-Bakr Belkaid, Tlemcen, Algeria
3. Center Exploitation Satellite Communications Agency of Space Oran, Algeria
4. University of Mostefa Benboulaid, Batna, Algeria 

Abstract: In this paper a 9nm T-shaped gate length, Pseudo-morphic High Electron Mobility Transistor (pHEMT AlGaN/AlN/GaN/AlGaN) is studied; we use TCAD software. DC, AC and RF performances assessment allow to exhibit interesting results such as a maximum drain current IDSmax=35mA at VGS=0V, a knee voltage Vknee=0.5V with ON-resistance Ron=0.8Ω-mm, a sub-threshold swing of 75mV/decade, a maximum transconductance value gm=160mS/mm, a DIBL of 36mV/V, a drain lag of 8.5%, a cut-off frequency of 110GHz, a maximum oscillation frequency of 800GHz, and very suitable breakdown voltage VBR of 53.1V. This device can be used in radar, high power and amplifier applications.