[paper] Noise Characterization of MOSFETs for Cryogenic Electronics

Variable-Temperature Broadband Noise Characterization of MOSFETs

for Cryogenic Electronics: From Room Temperature down to 3K

Kenji Ohmori¹ and Shuhei Amakawa²

TechRxiv. DETM 2022 Preprint

DOI: 10.36227/techrxiv.21762917.v1

1 Device Lab Inc., Tsukuba, Ibaraki, Japan,

2 Hiroshima University, Higashihiroshima, Hiroshima, Japan

Abstract: A broadband noise measurement system is newly developed and demonstrated at temperatures between 3K and 300K. Using the system, wideband noise spectroscopy (WBNS) from 20kHz to 500MHz is carried out for the first time, revealing that shot noise is the dominant white noise down to 3K. The paper also suggests, by means of WBNS, the possibility of extracting the baseline noise characteristics, which do not include the noise component that varies a great deal from device to device.

FIG: a.) IdVg Curves at T = 2.9K ... 300K and b.) 1/f Noise at T=5K

Acknowledgement: 

This work was partially supported by NEDO-SBIR.