Mu Wen Chuan, Munawar Agus Riyadi, Afiq Hamzah, Nurul Ezaila Alias, Suhana Mohamed Sultan, Cheng Siong Lim, Michael Loong Peng Tan
Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model
PLoS ONE 17(3): e0264483.: March 3, 2022
DOI: 10.1371/journal.pone.0264483
Universiti Teknologi Malaysia, Skudai, Johor, Malaysia
Diponegoro University, Semarang, Indonesia
Abstract: Moore’s Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed p-type silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work.
Fig: Schematic diagrams of AlSi3 FET: (a) the structure and
(b) the ToB nanotransistor circuit model.
Acknowledgements: 1.) Michael Tan Loong Peng - Ministry of Higher Education (MOHE) of Malaysia through the Fundamental Research Grant Scheme(FRGS/1/2021/ STG07/ UTM/02/3); The funders had no role in study design, data collection and analysis, decision to publish, or preparation of the manuscript. 2.) Munawar Agus Riyadi - World Class Research Universitas Diponegoro (WCRU) 2021 Grant no. 118-16/UN7.6.1/PP/2021; The funders had no role in study design, data collection and analysis, decision to publish, or preparation of the manuscript.
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