Wednesday, 9 January 2013

10th IWCM Workshop Program

10th International Workshop on Compact Modeling 

January 22 (Tue), 2013 

Pacifico Yokohama, Room 419

Yokohama, Japan

Time
#
Title
Authors
Affiliation
9:00-9:10

Opening: H. J.  Mattausch (Workshop Chair)




Power Devices   Chair: D. Navarro


9:10-9:30
1
HiSIM_HV Temperature Modeling for Multi-Geometry LDMOS: Comparison of the Temperature Flag Options
Y. Iino
Silvaco Japan
9:30-9:50
2
Analysis and Further Improvements of the Drain-Resistance Modeling in HiSIM_HV
T. Umeda et al.
Hiroshima University
9:50-10:10
3
Floating-Base Effect Modeling for IGBT Structure using Potential Modification
T. Yamamoto
et al.
Denso
10:10-10:30

- Break -




Novel FET Structures Chair: T. Nakagawa


10:30-10:50
4
Study on Dynamic Threshold Nanowire Tunnel FET
A. Zhang et al.
Peking University
Shenzhen
10:50-11:10
5
A DC Model of TFETs for SPICE Simulations
L. Zhang and M. Chan
HK UST 
11:10-11:30
6
A Surface Potential Based Compact Model of Organic Thin-Film Transistor for Circuit Simulation
T.K. Maiti et al.
Hiroshima University
11:30-11:40

-  Break -




Optical and Wireless Chair: J. He


11:40-12:00
7
An Embedded Modulation of Silicon Germanium FIN-LED - A simulation study
J. Kwon et al.
Seoul National
University
12:00-12:20
8
Predicting Key Parameters of Inductive Power Links
S. Raju et al.
HK UST 
12:20-14:00

- Lunch Break -




Aging and Degradation Chair: M. Miura-Mattausch


14:00-14:40
9
Invited Keynote: Interaction of Bloch Carrier and Bound State in the Reliability Modeling
Y.J. Park and
S. Choi
Seoul National
University
14:40-15:00
10
Development of Unified Predictive NBTI Model and its Application for Circuit Aging Simulation
C. Ma et al.
Hiroshima University, STARC
15:00-15:20
11
Effects of Nonlocal Concentration of Carriers in the Oxide for NBTI Simulation
S. Rhee et al.
Seoul National
University
15:20-15:40

-  Break -




Fabrication Variation Chair: Y. J. Park


15:40-16:00
12
Parameter Extraction for Statistical Variation of HV-MOSFETs
Y. Ueda et al.
Ricoh, STARC
16:00-16:20
13
Analysis of Gate-Length Dependence of MOSFET Random Variation by Using HiSIM-RP
S. Kumashiro
et al.
Renesas Electronics
16:20-16:40
14
Random Dopant Fluctuation Effects on Double Gate Tunneling FET Performance
Y. Zhu et al.
Peking University
Shenzhen
16:40-16:50

Closing: H.J. Mattausch (Workshop Chair)



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