Lecture: MOSFET Modelling
J-M. Sallese; EPFL
Specific 90nm physical effects (DIBL, gate current, mobility saturation, velocity saturation). Available models and their RF performance: BSIM, EKV3, PSP. Modeling of analog and RF parameters (e.g., gm/ID, gm/gDS, CV modeling, gate leakage, etc.). Other topics include: noise modeling, distortion, breakdown effects, thermal issues and power devices, and physical layout effects (parasitics, test, maximizing gain-bandwidth, etc.).
Location: STFC/RAL, UK; From: 14-Jan-2013 To: 18-Jan-2013
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