#25 #Microchips That Shook the #World - IEEE Spectrum https://t.co/XCdh3S0ClW #semi https://t.co/JFWuLICVDT

#25 #Microchips That Shook the #World - IEEE Spectrum https://t.co/XCdh3S0ClW #semi pic.twitter.com/JFWuLICVDT

1968 Fairchild Semiconductor μA741 Op-Amp
1971 Signetics NE555 Timer
1971 Western Digital WD1402A UART
1973 Mostek MK4096 4-Kilobit DRAM
1975 MOS Technology 6502 Microprocessor
1976 Zilog Z80 Microprocessor
1978 Texas Instruments TMC0281 Speech Synthesizer
1979 Intel 8088 Microprocessor
1979 Motorola MC68000 Microprocessor
1983 Intersil ICL8038 Waveform Generator
1983 Texas Instruments TMS32010 Digital Signal Processor
1985 Acorn Computers ARM1 Processor
1985 Chips & Technologies AT Chip Set
1985 Xilinx XC2064 FPGA
1986 Kodak KAF-1300 Image Sensor
1987 Sun Microsystems SPARC Processor
1987 Texas Instruments Digital Micromirror Device
1988 Computer Cowboys Sh-Boom Processor
1989 Toshiba NAND Flash Memory
1993 Microchip Technology PIC 16C84 Microcontroller
1994 Amati Communications Overture ADSL Chip Set
1997 IBM Deep Blue 2 Chess Chip
1997 Micronas Semiconductor MAS3507 MP3 Decoder
1998 Tripath Technology TA2020 AudioAmplifier
2000 Transmeta Corp. Crusoe

— Wladek Grabinski (@wladek60) September 7, 2020

---

from Twitter https://twitter.com/wladek60

September 07, 2020 at 03:57PM
via IFTTT

[paper] Vertical Graphene–hBCN Heterostructure TFETs

A comparative computational study of tunneling transistors

based on vertical graphene–hBCN heterostructures

Mahsa Ebrahimi¹, Ashkan Horri¹, Majid Sanaeepur², and Mohammad Bagher Tavakoli¹

J. Appl. Phys. 127, 084504 (2020); DOI: 10.1063/1.5130777

Published Online: 28 February 2020

¹Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran
²Department of Electrical Engineering, Faculty of Engineering, Arak, Iran

ABSTRACT In this paper, the electrical characteristics of tunneling transistors based on vertical graphene and a hexagonal boron-carbon-nitrogen (hBCN) heterostructure are studied and compared theoretically. We have considered three different types of hBCN, i.e., BC₂N, BC₂N₀, and BC₆N as a tunneling barrier. Our simulation is based on the nonequilibrium Green’s function formalism along with an atomistic tightbinding (TB) model. The TB parameters are obtained by fitting the band structure to first-principles results. By using this method, electrical characteristics of the device, such as the ION=IOFF ratio, subthreshold swing, and intrinsic gate-delay time, are investigated. For a fair comparison, the effects of geometrical variations and number of tunneling barrier layers on the electrical parameters of the device are simulated and investigated. We show that, by an appropriate design, the device can be used for low-power or high-performance applications. The device allows current modulation exceeding 106 at room temperature for a 0.6 V bias voltage.

FIG. DFT Band structure for (a) graphene - hBC₂N₀ - graphene (b) graphene - hBC₂N - graphene and (c) graphene - hBC₆N - graphene supercell. BC and BV represent barrier height in the conduction band and valence band, respectively, all simulated with QUANTUM ESPRESSO: A modular and opensource software for quantum simulations of materials

OFETs Compact Modeling

Advances in Compact Modeling of Organic Field-Effect Transistors

Sungyeop Jung¹, Member, IEEE, Yvan Bonnassieux², Gilles Horowitz², Sungjune Jung¹, Member, IEEE, Benjamin Iñiguez³, Fellow, IEEE, and Chang-Hyun Kim⁴, Senior Member, IEEE

IEEE J-EDS (Early Access)

DOI: 10.1109/JEDS.2020.3020312

¹Future IT Innovation Laboratory and Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang 37673, South Korea.
²LPICM, Ecole Polytechinque, CNRS, 91128 Palaiseau, France.

³DEEEA, Universitat Rovira i Virgili, Tarragona 43007, Spain.

⁴Department of Electronic Engineering, Gachon University, Seongnam 13120, South Korea

Abstract: In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades, the OFET technology still seems to remain at a relatively low technological readiness level. Among various possible reasons for that, the lack of a standard compact model, which effectively bridges the device- and system-level development, is clearly one of the most critical issues. This paper broadly discusses the essential requirements, up-to-date progresses, and imminent challenges for the OFET compact device modeling toward a universal, physically valid, and applicable description of this fast-developing technology.

Figure (a) Cross-sectional illustration and (b) circuit diagram with multi-component overlap capacitances of the printed 3-D organic complementary inverter, and (c) measured and simulated transient output voltage of an 11-stage ring oscillator.

#Special Issue: The 11th International Symposium on Electric and Magnetic Fields (#EMF 2018) https://t.co/pVDWOoLXC4 #paper https://t.co/HqmYxemttD

#Special Issue: The 11th International Symposium on Electric and Magnetic Fields (#EMF 2018) https://t.co/pVDWOoLXC4 #paper pic.twitter.com/HqmYxemttD

— Wladek Grabinski (@wladek60) September 4, 2020

from Twitter https://twitter.com/wladek60

September 04, 2020 at 10:39AM
via IFTTT

Startups encouraged to get busy with #opensource 32-bit #Shakti, 64-bit Vega. #India selects RISC-V for semiconductor self-sufficiency contest: Use these #homegrown cores to build kit https://t.co/HUbXBJHILM https://t.co/yTs6D904JK

Startups encouraged to get busy with #opensource 32-bit #Shakti, 64-bit Vega. #India selects RISC-V for semiconductor self-sufficiency contest: Use these #homegrown cores to build kit https://t.co/HUbXBJHILM pic.twitter.com/yTs6D904JK

— Wladek Grabinski (@wladek60) September 4, 2020

from Twitter https://twitter.com/wladek60

September 04, 2020 at 09:09AM
via IFTTT