ICECS 2019 paper deadline submission is approaching fast: July 15th, 2019
Please distribute this reminder to possible contributors and interested researchers and colleagues. Topics of interest include but are not limited to:
• Analog/mixed-signal/RF circuits
• Biomedical and Bio-Inspired Circuits and Systems
• EDA, Test and Reliability
• Digital circuits and systems
• Linear and Non-linear Circuits
• Low-Power Low-Voltage Design
• Microsystems
• Neural networks, Machine and Deep Learning
• Sensors and Sensing Systems
• Signal Processing, Image and Video
• VLSI Systems and Applications
The technical committee invites authors to submit 4-page papers in standard IEEE double-column format, including references, figures and tables, to clearly present the work, methods, originality, significance and applications of the techniques discussed.
Maurizio Valle; IEEE ICECS 2019 General Chair
https://www.ieee-icecs2019.org/
Jul 12, 2019
Jul 8, 2019
Leti Workshop at SISPAD 2019
Leti is pleased to invite you to attend our ‘Advanced Simulations for Emerging Non-Volatile Memory Technologies’ seminar, which is organized as an official satellite event of the 2019 IEEE SISPAD Conference (http://www.sispad2019.org). By the proposed seminar, we will emphasize how simulation and modeling support memory technology developments and device behavior understanding.
This event will held on Tuesday, September 3rd from 5:00 PM to 7:30 PM, Palazzo di Toppo Wassermann, Università degli Studi di Udine, Udine, Italy (i.e. at the SISPAD 2019 conference location).
PROGRAM
- Welcome and Introduction – T. Poiroux
- Innovative non-volatile memory technologies: a revolution for the storage towards a memory that thinks – G. Navarro
- Electro-thermal and material simulations for PCM – O. Cueto
- Multiphase field method for the simulation of the complex phase changes in PCM – R. Bayle
- Invited talk: Self-consistent TCAD simulation of chemical reactions within electronic devices. Application to CBRAM and OxRAM – Silvaco
- Networking cocktail
Registration is free but, due to limited seats, please register just sending an email to thierry.poiroux@cea.fr and sebastien.martinie@cea.fr.
Feel free to share this invite with your colleagues !
Jun 17, 2019
[open source paper] Open-source circuit simulation tools for RF compact semiconductor device modelling
Wladek Grabinski (editor), Mike Brinson, Paolo Nenzi, Francesco Lannutti, Nikolaos Makris, Angelos Antonopoulos and Matthias Bucher
September 2014
DOI: 10.1002/jnm.1973
SUMMARY: MOS-AK is a European, independent compact modelling forum created by a group of engineers, researchers and compact modelling enthusiasts to promote advanced compact modelling techniques and model standardization using high level behavioral modelling languages such as VHDL-AMS and Verilog-A. This invited paper summarizes recent MOS-AK open source compact model standardization activities and presents advanced topics in MOSEFT modelling, focusing in particular on analogue/RF applications. The paper discusses links between compact models and design methodologies, finally introducing elements of compact model standardization. The open source CAD tools: Qucs, QucsStudio and ngspice all support Verilog-A as a hardware description language for compact model standardization. Latter sections of this paper describe a Verilog-A implementation of the EKV3 MOS transistor model. Additionally, the simulated RF model performance is evaluated and compared with experimental results for 90nm CMOS technology.
KEYWORDS: CAD; GNU; Qucs; QucsStudio; ngspice; compact modeling; EKV3; RF; MOSFET; Verilog-A
Jun 14, 2019
[book] POWER/HVMOS Devices Compact Modeling
POWER/HVMOS Devices Compact Modeling
Wladyslaw Grabinski and Thomas Gneiting
Editors
Book 7 Citations; 119 Readers; 2 Reviews; 6k+ Downloads
DOI: 10.1007/978-90-481-3046-7
Since its online publication on Jun 10, 2010, there have been a total of 6452 chapter downloads for your eBook on SpringerLink. The table below shows the download figures for the last years:
Year | Usage |
---|---|
2018
|
656
|
2017
|
766
|
2016
|
843
|
2015
|
912
|
2014
|
1333
|
2013
|
658
|
2012
|
420
|
2011
|
401
|
2010
|
463
|
Jun 13, 2019
#XFAB and #Efabless developed the #opensource RISC-V microcontroller, called Raven, in less than three months https://t.co/2kEZVEEZum https://t.co/oWoYlMjk4o
#XFAB and #Efabless developed the #opensource RISC-V microcontroller, called Raven, in less than three months https://t.co/2kEZVEEZum pic.twitter.com/oWoYlMjk4o
— Wladek Grabinski (@wladek60) June 13, 2019
from Twitter https://twitter.com/wladek60
June 13, 2019 at 10:05PM
via IFTTT
Jun 11, 2019
[mos-ak] [Final Program] 4th Sino MOS-AK Workshop Chengdu, June 20-22, 2019
4th Sino MOS-AK Workshop
UESTC 电子科技大学 Chengdu, June 20-22, 2019
After successful series of MOS-AK workshops in Shanghai, Hangzhou and Beijing, our next scheduled, subsequent 4th Sino MOS-AK Workshop at UESTC 电子科技大学 Chengdu, aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and its Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and TCAD/EDA tool developers and vendors. The MOS-AK workshop program is available online: <http://www.mos-ak.org/chengdu_2019/> (see also below)
会议场所:电子科技大学图书馆求实厅(图书馆旁博物馆二楼)UESTC Library Realistic office (the second floor of the museum next to the library)<http://www.xmodtech.cn/Workshop-Address>
Online Registration is still open
(any related enquiries can be sent to Yuan Yao mobile:13086679508)
Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication
in a special issue of the International Journal of High Speed Electronics and Systems
in a special issue of the International Journal of High Speed Electronics and Systems
Recommended hotels
酒店:成都新希望高新中心假日酒店Hotel: Holiday Inn Chengdu High-Tech Center地址:中国四川省成都市郫都区西芯大道1号附1号Address: No.1-1 Xixin Avenue Pidu District Chengdu Chinamore at: <http://www.xmodtech.cn/HOTEL2>
Prof. Yuhang Xu, UESTC
Dr. Min Zhang, XMOD
and W.Grabinski
on the behalf of International MOS-AK Committee
WG110619
Final MOS-AK Program Announcement
20th JUNE | MOS-AK Tutorial Day |
9:00-11:45 | Modeling of Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wafer circuits Andreas Pawlak Infineon AG |
13:00-16:15 | 1. Radar frontends for ranging and speed measurements operating at 24GHz, 60GHz and 122GHz ISM frequency bands 2. Radar frontends for MIMO radars operating at 24GHz, 60GHz, 122GHz and 245GHz ISM frequency bands Wojciech Debski Silicon Radar GmbH |
21st JUNE | 1st Day of MOS-AK Workshop |
8:30-9:20 | WORKSHOP CHECK IN |
9:30-9:35 | MOS-AK Opening Speech TBD UESTC |
9:35-9:40 | MOS-AK Review & Outlook Min Zhang, Wladek Grabinski XMOD, MOS-AK |
9:40-10:25 | The Model and Algorithm Prototyping Platform (invited talk) Jaijeet Roychowdhury U.C.Berkely |
10:25-10:50 | Device modeling Eco-system Driven by Learning-based algorithms Yanfeng Li Platform-DA |
10:50-11:05 | Tea break |
11:05-11:50 | Simulation and Modeling of Dynamic Systems with Time Varying device Characteristics (invited talk) Masun Chan HKUST |
11:50-12:00 | Group photo |
12:00-13:30 | Lunch |
13:30-14:00 | Advanced TFT Modeling Techniques for GOA Driver Circuit Design Optimization (invited talk) An-Thung Cho, Lifeng Wu HuaDa Empyrean software, Chongqing HKC |
14:00-14:25 | Active Device Channel spice thermal modeling and parameter extraction Fujiang Lin USTC |
14:25-14:50 | Simulation-Based Reliability Analysis for Advanced Designs and Applications Xugang Shen Synopsys, Inc. |
14:50-15:10 | Tea break |
15:10-15:55 | Silicon intergrated magneto-optical nonreciprocal photonic devices (invited talk) Lei Bi UESTC |
15:55-16:20 | An Analysis of DG SOI MOSFET Modeling and Simulation with PSP, BSIM-IMG and HiSIM_SOTB GuoFang Wang, Jun Liu HDU |
16:20-16:45 | TCAD-Based Statistical Modelling Methodology for Nanoscale FinFET Variability Guo Ao ICRD |
16:45-17:10 | Characterization and Modeling of the Reverse behavior of a Vertical Power MOSFET Lixi Yan Stuttgart University |
17:10-17:35 | An Industry Standard Model Including Fast and Extended Range Core with Improved Mobility and Noise effect Chetan Kumar Dabhi IITK |
17:35-18:30 | MOS-AK Compact Modeling Round-Table Forum Min Zhang, Wladek Grabinski XMOD, MOS-AK |
18:30-20:00 | MOS-AK Gala Dinner |
22nd JUNE | 2nd Day of MOS-AK Workshop |
8:30-9:20 | WORKSHOP CHECK IN |
9:30-10:15 | Negative Capacitance FET and Nanowire/Nanosheet FET modeling (invited talk) Yogesh Chauhan IITK |
10:15-10:40 | An Simulation Platform for IGBT Module Electrothermal Analysis Chen Shen Cogenda |
10:40-11:00 | Tea break |
11:00-11:45 | Artificial Neural Networks for Microwave Modeling and Design (invited talk) Qijun Zhang Carleton University |
11:45-12:10 | A transient ionizing Radiation Spice model for PDSOI MOSFET Jianhui Bu IME Chinese Academy |
12:10-13:30 | Lunch |
13:30-14:15 | Quasi-physical Zone division (QPZD) model for microwave wide-band-gap semiconductor technology (invited talk) Yuehang Xu UESTC |
14:15-14:40 | RF GaN Device model survey and model parameter extraction flows Raj Sodhi Keysight |
14:40-15:05 | Charaterization and modeling of Memory effects for GaN HEMTs ZhiFu Hu HSRI |
15:05-15:25 | Tea break |
15:25-15:50 | Key Technology to GaN-based mm-Wave Devices and MMIC's (invited talk) Xiaohua Ma Xidian University |
15:50-16:15 | A Dimension-Reduction Method for the Thermal Modeling of InGaP/GaAs HBTs Wenrui Hu, Yongxin Guo NUS |
16:15-16:40 | DC and RF Modeling of CMOS Schottky Diodes Wenyuan Zhang, Yan Wang Tsinghua University |
16:45-17:10 | RF GaN Device modeling for MMIC design Chujun Wang CETC 55 |
17:10-17:15 | MOS-AK 2020 Min Zhang, Wladek Grabinski XMOD, MOS-AK |
End of the MOS-AK Chengdu Workshop |
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S. Li etal. A Buffer-Less Wideband Frequency Doubler in 45nm SOI with Transistor Multi-Port Waveform Shaping Achieving 25% Drain Efficiency and 46-89GHz Instantaneous Bandwidth in IEEE Solid-State Circuits Letters. doi: 10.1109/LSSC.2019.2918943 https://t.co/buZkWbSAvo #paper https://t.co/dEPj5OG5Vb
S. Li etal. A Buffer-Less Wideband Frequency Doubler in 45nm SOI with Transistor Multi-Port Waveform Shaping Achieving 25% Drain Efficiency and 46-89GHz Instantaneous Bandwidth in IEEE Solid-State Circuits Letters.
— Wladek Grabinski (@wladek60) June 11, 2019
doi: 10.1109/LSSC.2019.2918943 https://t.co/buZkWbSAvo #paper pic.twitter.com/dEPj5OG5Vb
from Twitter https://twitter.com/wladek60
June 11, 2019 at 02:22PM
via IFTTT
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