The Division of Silicon Microsystem and Nanostructure (http://www.ite.waw.pl/en/Z02.php) at Institute of Electron Technology (http://www.ite.waw.pl/en/index.php), Warsaw, Poland is seeking an experienced researcher for a position in the frame of a European Marie Curie Project.
Area of work
The researcher will work in the area of compact modelling of multi-gate MOSFETs. Two main topics should be covered during the researcher stay in ITE:
- development of parameter extraction methods for multi-gate MOS devices, using I-V, C-V, G-V characteristics of sets of devices, and based on combination of global optimization (constrained or unconstrained) and local fitting approaches,
- development of parameter extraction methods based on electrical characteristics of sets of multi-gate MOS devices, which account for parameters fluctuations within a wafer; (example: extraction of MOSFETs size variations DW, DL due to systematic and/or statistic photolithography and other processes fluctuations).
The work will be done in collaboration with a leading European semiconductor foundry, and leading modelling and characterization groups from European universities.
Contract details
Temporary contract, duration 20 months, full time, starting date 1 October 2009. This postdoc post is funded by the Marie-Curie European Compact Modelling network. The net monthly salary is more than 2200 Euro/month.
Application deadline: 31 August 2009.
Contact: Dr. Daniel Tomaszewski, email: dtomasz@ite.waw.pl
Requirements
Candidates should possess either
- a Ph.D. degree or
- a M.Sc. or Dipl.-Ing. Degree and at least 4 years of research experience
in electrical engineering, preferably in semiconductor microelectronics.
Good skills in written and spoken English are mandatory.
Desirable is research experience in the following areas:
- Compact modeling of MOS devices
- Characterization methods of MOS devices
- Numerical simulation of MOS devices
- Numerical methods
- Programming
Jun 9, 2009
Jun 8, 2009
Compact Modeling Job Vacancy at Technical University Ilmenau, Germany
The RF & Nano Device group (http://www.tu-ilmenau.de/fakei/1342+M54099f70862.0.html) at TU Ilmenau (http://www.tu-ilmenau.de/uni/index.php) is seeking an experienced researcher for a position in the frame of a European Marie Curie Project.
The researcher will work on compact modeling of high-frequency transistors, in
particular HEMTs (High Electron Mobility Transistor). He or she will be responsible
for the development of compact models for the large-signal high-frequency behavior of
HEMTs. This will include models for the dc current-voltage characteristics and the high-frequency large-signal behavior of HEMTs with special emphasis on the modeling of nonlinearities including the extraction of model parameters from experimental results. The work will be done in close contact to a leading European semiconductor foundry.
Contract details: Temporary contract, duration 20 months, full time, starting date 1 September 2009.
Application deadline: 31 July 2009.
Contact: PD Dr. Frank Schwierz, email: frank.schwierz@tu-ilmenau.de
Requirements: Candidates should possess either
- a Ph.D. degree or
- a Master or Dipl.-Ing. Degree and at least 4 years of research experience
in electrical engineering, preferably in semiconductor electronics. Good skills in written and spoken English are mandatory.
Desirable is research experience in the following areas:
- Compact modeling of semiconductor devices
- Large-signal modeling and analysis
- Nonlinear behavior of semiconductor devices and modeling of nonlinearities.
The researcher will work on compact modeling of high-frequency transistors, in
particular HEMTs (High Electron Mobility Transistor). He or she will be responsible
for the development of compact models for the large-signal high-frequency behavior of
HEMTs. This will include models for the dc current-voltage characteristics and the high-frequency large-signal behavior of HEMTs with special emphasis on the modeling of nonlinearities including the extraction of model parameters from experimental results. The work will be done in close contact to a leading European semiconductor foundry.
Contract details: Temporary contract, duration 20 months, full time, starting date 1 September 2009.
Application deadline: 31 July 2009.
Contact: PD Dr. Frank Schwierz, email: frank.schwierz@tu-ilmenau.de
Requirements: Candidates should possess either
- a Ph.D. degree or
- a Master or Dipl.-Ing. Degree and at least 4 years of research experience
in electrical engineering, preferably in semiconductor electronics. Good skills in written and spoken English are mandatory.
Desirable is research experience in the following areas:
- Compact modeling of semiconductor devices
- Large-signal modeling and analysis
- Nonlinear behavior of semiconductor devices and modeling of nonlinearities.
Jun 4, 2009
IEEE SCV EDS Electron Device talks for June
"Negative Bias Temperature Instability in p-MOSFETs: Fundamentals, Characterization, Materials Dependence and Modeling"
Speaker: Dr. Souvik Mahapatra, Dept. of Electrical Engineering, IIT Bombay
Date: Tuesday, June. 9, 2009
Location: National Semiconductor, Building E1, Conference Center, 2900 Semiconductor Drive, Santa Clara, CA 95051.
More information at the IEEE Santa Clara Valley EDS Chapter Home Page.
Speaker: Dr. Souvik Mahapatra, Dept. of Electrical Engineering, IIT Bombay
Date: Tuesday, June. 9, 2009
Location: National Semiconductor, Building E1, Conference Center, 2900 Semiconductor Drive, Santa Clara, CA 95051.
More information at the IEEE Santa Clara Valley EDS Chapter Home Page.
Jun 3, 2009
Job offers
Three nice job offers:
Microwave Device Modeling Engineer, Massachusetts
Device Modeling Engineer, Cambridgeshire
Device Simulation Engineer - Solar, Surrey
Remember that we only post these offers here as an act of good will, and we're not related in any form to any of them...
Microwave Device Modeling Engineer, Massachusetts
Device Modeling Engineer, Cambridgeshire
Device Simulation Engineer - Solar, Surrey
Remember that we only post these offers here as an act of good will, and we're not related in any form to any of them...
May 29, 2009
Agilent-EEsof X-Parameters Course
Agilent-EEsof is offering an 3-day course – July 7-9 (Massy – France)
WHAT WILL YOU LEARN?
Read more...
WHAT WILL YOU LEARN?
- This course starts with an overview of non-linear components behavioral modeling and the extension of S-parameters into X-parameters.
- Then it drives you through the calibration requirements for X-parameters measurements. Finally the use of X-parameters models in ADS (Advanced Design System) is illustrated with cascaded amplifiers in an LTE (3rd Gen. Partnership Project - Long Term Evolution) RF subsystem.
- Participants will have the opportunity to drive the measurements and perform hands-on exercises in the ADS software.
Read more...
Organic, Molecular and Nanostructured Electronics - Physics and Technology
Date: June 8-12, 2009 | Continuing Education Units
Description: This course will review basic concepts underlying the design, fabrication, and operation of three dominant types of organic electronic devices: light emitting devices (OLEDs), photosensitive devices (solar cells and photodetectors), and field effect transistors (OFETs). We will also discuss, but devote less time to, organic lasers, organic memories, and chemical sensors. The course aims to present a broad and practical survey of the field and to immerse you in the broad field of organic materials. As a sub-class of nanostructured solids, organic thin films exemplify challenges of the practical nanotechnologies. Many concepts presented in the class are directly transferable to a broader field of nanostructured materials.
Instructors: Professors Vladimir Bulovic and Marc Baldo of the MIT Laboratory of Organic Optics and Electronics.
Read More...
Description: This course will review basic concepts underlying the design, fabrication, and operation of three dominant types of organic electronic devices: light emitting devices (OLEDs), photosensitive devices (solar cells and photodetectors), and field effect transistors (OFETs). We will also discuss, but devote less time to, organic lasers, organic memories, and chemical sensors. The course aims to present a broad and practical survey of the field and to immerse you in the broad field of organic materials. As a sub-class of nanostructured solids, organic thin films exemplify challenges of the practical nanotechnologies. Many concepts presented in the class are directly transferable to a broader field of nanostructured materials.
Instructors: Professors Vladimir Bulovic and Marc Baldo of the MIT Laboratory of Organic Optics and Electronics.
Read More...
International Summer School MOMiNE 2009
International Summer School on Modelling and Optimization in Micro- and Nano- Electronics - MOMiNE Italy Sept. 2009: The aim of the School is to stimulate intensive transfer of knowledge and discussion on modeling and optimization of electronic circuits and devices, by presenting the latest developments, insights, methods, algorithms and ideas in these areas of research, providing also indications for future research directions. An important aspect is the involvement of researchers working for industries, which can provide a more timely indication of the most relevant up-to-date problems encountered in real industrial environments.
The International Summer School MOMINE 2009 will be held from 31/08 to 12/09 at:
Grand Hotel San Michele
Località: Bosco 8/9, 87022 Cetraro (Cosenza), Italy
Phone: (+39) 0982 91012 Fax: (+39) 0982 91430
Read more...
The International Summer School MOMINE 2009 will be held from 31/08 to 12/09 at:
Grand Hotel San Michele
Località: Bosco 8/9, 87022 Cetraro (Cosenza), Italy
Phone: (+39) 0982 91012 Fax: (+39) 0982 91430
Read more...
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