The RF & Nano Device group (http://www.tu-ilmenau.de/fakei/1342+M54099f70862.0.html) at TU Ilmenau (http://www.tu-ilmenau.de/uni/index.php) is seeking an experienced researcher for a position in the frame of a European Marie Curie Project.
The researcher will work on compact modeling of high-frequency transistors, in
particular HEMTs (High Electron Mobility Transistor). He or she will be responsible
for the development of compact models for the large-signal high-frequency behavior of
HEMTs. This will include models for the dc current-voltage characteristics and the high-frequency large-signal behavior of HEMTs with special emphasis on the modeling of nonlinearities including the extraction of model parameters from experimental results. The work will be done in close contact to a leading European semiconductor foundry.
Contract details: Temporary contract, duration 20 months, full time, starting date 1 September 2009.
Application deadline: 31 July 2009.
Contact: PD Dr. Frank Schwierz, email: email@example.com
Requirements: Candidates should possess either
- a Ph.D. degree or
- a Master or Dipl.-Ing. Degree and at least 4 years of research experience
in electrical engineering, preferably in semiconductor electronics. Good skills in written and spoken English are mandatory.
Desirable is research experience in the following areas:
- Compact modeling of semiconductor devices
- Large-signal modeling and analysis
- Nonlinear behavior of semiconductor devices and modeling of nonlinearities.