Monday, June 8, 2009

Compact Modeling Job Vacancy at Technical University Ilmenau, Germany

The RF & Nano Device group ( at TU Ilmenau ( is seeking an experienced researcher for a position in the frame of a European Marie Curie Project.

The researcher will work on compact modeling of high-frequency transistors, in
particular HEMTs (High Electron Mobility Transistor). He or she will be responsible
for the development of compact models for the large-signal high-frequency behavior of
HEMTs. This will include models for the dc current-voltage characteristics and the high-frequency large-signal behavior of HEMTs with special emphasis on the modeling of nonlinearities including the extraction of model parameters from experimental results. The work will be done in close contact to a leading European semiconductor foundry.

Contract details: Temporary contract, duration 20 months, full time, starting date 1 September 2009.

Application deadline: 31 July 2009.

Contact: PD Dr. Frank Schwierz, email:

Requirements: Candidates should possess either

- a Ph.D. degree or

- a Master or Dipl.-Ing. Degree and at least 4 years of research experience

in electrical engineering, preferably in semiconductor electronics. Good skills in written and spoken English are mandatory.

Desirable is research experience in the following areas:

- Compact modeling of semiconductor devices

- Large-signal modeling and analysis

- Nonlinear behavior of semiconductor devices and modeling of nonlinearities.

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