Advanced Nanoscale MOSFET Architectures:
Current Trends and Future Perspectives
Kalyan Biswas, Angsuman Sarkar
John Wiley & Sons - Technology & Engineering (2024) 336 pages
ISBN: 978-1-394-18894-9
Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation. Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs.
Table of Contents:
[1] Emerging MOSFET Technologies; pp. 1Kalyan Biswas and Angsuman Sarkar
[2] MOSFET: Device Physics and Operation; pp. 15
Ruthramurthy Balachandran, Savitesh M. Sharma, and Avtar Singh[3] High-k Dielectrics in Next Generation VLSI/Mixed Signal Circuits; pp. 47
Asutosh Srivastava[4] Consequential Effects of Trap Charges on Dielectric Defects for MU-G FET; pp. 61
Annada S. Lenka and Prasanna K. Sabu[5] Strain Engineering for Highly Scaled MOSFETs; pp. 85
Chinmay K. Maiti, Taraprasanna Dash, Jhansirani Jena, and Eleena Mohapatra[6] TCAD Analysis of Linearity Performance on Modified Ferroelectric Layer in FET Device with Spacer; pp. 113
Yash Pathak, Kajal Verma, Bansi Dhar Malhotra, and Rishu Chauzar[7] Electrically Doped Nano Devices: A First Principle Paradigm; pp. 125
Debarato D. Ray, Pradipta Roy, and Debashis De[8] Tunnel FET: Principles and Operations; pp. 143
Zahra Ahangari[9] GaN Devices for Optoelectronics Applications; pp. 175
Nagarajan Mohankumar and Girish S. Mishra[10] First Principles Theoretical Design on Graphene-Based Field-Effect Transistors; pp. 201
Yoshitaka Fujimoto[11] Performance Analysis of Nanosheet Transistors for Analog ICs; pp. 221
Yogendra R Pundir, Arvind Bisht, and Pankaj K. Pal[12] Low-Power Analog Amplifier Design using MOS Transistor in the Weak Inversion Mode; pp. 255
Soumya Pandit and Koyel Mukherjee[13] Ultra-conductive Junctionless Tunnel FET-based Biosensor with Negative Capacitance; pp. 281
Palasri Dhar, Soumik Poddar, and Sunipa Roy[14] Conclusion and Future Perspectives; pp. 301
Kalyan Biswas and Anqsuman Sarkar[INDEX]; pp. 311
