Feb 3, 2025

[FOSDEM'25] OpenPDK and FOSS CAD-EDA tools


FOSDEM is a free event for software developers to meet, share ideas and collaborate, it was organized for 25th subsequent time at ULB Solbosch Campus, Brussels, Belgium, between Feb. 1-2, 2025. One of FOSDEM DevRooms (conferences sessions) "Open Hardware and CAD/CAM" was organized to review most recent developments of the printed circuit board (PCBs) design tools, circuit (ICs) designs/simulations, 3D modeling and analysis and collaborative and team-based hardware design techniques among many other related activities. The contributors and supporters of the OpenPDK Initiative showcased these remarkable developments: 

Abstract: VACASK is a novel FOSS analog circuit simulator with a clear separation between device models (i.e. equations) and circuit analyses. It is based on the state of the art KLU sparse matrix library and utilizes the OpenVAF Verilog-A compiler for building its device models from Verilog-A sources. A comparison with other FOSS analog circuit simulators is presented and the roadmap for future development is discussed. A major obstacle in development of VACASK (and every other new simulator) is the implementation of legacy device models that boils down to writing tens of thousands of lines of C code. Legacy device models are used in several older PDKs as well as in models of a large number of discrete electronic components. A novel approach to implementing these device models is proposed: a converter from SPICE3 API-based C code into modern Verilog-A code. The performance of the converted models is compared to that of native SPICE3 models. At the present the converted models can be used in VACASK and Ngspice circuit simulators as well as in any other simulator that supports Verilog-A. The limitations of the approach are discussed. Some alternative use cases for the converter are proposed and a roadmap for its future development is presented.

Abstract: XSPICE code models have been intrgrated into ngspice since starting the ngspice project. Currently 68 device models are available, ranging from simple elements like analog gain cells or digital inverters up to complex ones like a digital state machine, SRAMs, 3D table models or interfaces to digital Verilog building blocks compiled with Verilator. The simulation with digital blocks is fast, since event based. The interface between digital and analog blocks is automated. The use of the XSPICE code models has been hampered a bit due to their specific interfaces and the lack of graphical symbols of its elements for creating user readable circuit diagrams. So I have started a project to provide XSPICE code model support via the well-known KiCad/ngspice integration. It comprises of symbol library and its assiciated device models assembled in a subcircuit model library. In the talk I will inform about its concept and status and will present some application examples 
https://forum.kicad.info/t/simulation-with-xspice-code-models/56384 https://sourceforge.net/projects/ngspice/

Felix Salfelder and Al Davis: "Verilog-AMS in Gnucap"
Abstract: Gnucap is a Free versatile and modern, modular, analog and mixed-signal simulator. Verilog-AMS is a standardized behavioural language for analog and mixed-signal systems based on the IEEE 1364-2005 industry standard, commonly known as Verilog. Gnucap was invented to advance circuit simulator technology from around 1985, at the time SPICE was developed (1973-1993) at UC Berkeley. Gnucap was released under GPLv3+ in 2001 to avoid patent issues. Today, proprietary simulators supposedly implement the most efficient algorithms yet inspired by public research from the past century. Meanwhile, the Gnucap project is making progress harvesting the breakthroughs, for use in free/libre software. To address the interoperability across circuit design tools, and across modelling domains, Verilog-AMS was created. Verilog-AMS extends traditional Verilog by analog features known from SPICE, and permits models that interact with both the digital and analog domains. The standard expertly allows for vendor-independent representations of modern circuit designs.
1 In this talk, we will explain the new revision of our proposed IEEE 1364-2005 compliant schematic interchange format, and how seamless interaction will empower FOSS EDA tools. We will outline work in progress, possibly demonstrate an application, and hint at opportunities. We will explain how the interchange will extend towards PCB design and layout
2 We will summarise new mixed signal features available in modelgen-verilog. This includes monitored analog events, as well as discrete modelling in terms of user defined primitives. We will expand on the usefulness of discrete disciplines and "connect modules", and give an update on the implementation status.
3 On the algorithmic end, we have added a plugin interface for VLSI-ready matrix solvers to the zoo. We will highlight a new solver combining temporal sparsity with the time/space efficiency of "conventional sparse" LU decomposition. We will explain why Gnucap will outpace traditional (open source) solvers on virtually all instances, both small and big circuits.
Abstract: In the field of semiconductor technology, compact modeling, and IC designs, the OpenPDK Initiative provides an international platform for discussing advanced technologies, fostering collaboration among industry and academic leaders in electronic design automation (EDA). We review selected R&D topics presented at a recent event by prominent academic researchers and industrial professionals who presented and discussed innovative approaches in CAD/EDA tools, techniques including compact/SPICE modeling, and IC design that address the demands of emerging semiconductor technology applications. However, the semiconductor industry also faces many challenges in maintaining the growth of its workforce with skilled technicians and engineers. To address the increasing need for well-trained workers worldwide, we must find innovative ways to attract skilled talent and strengthen the local semiconductor workforce ecosystem. The FOSS CAD/EDA tools with the recently available open access PDKs provide a new platform to connect IC design beginners, enthusiasts and experienced mentors to benefit from the collaboration opportunities enabled by the fast-growing open-source IC design movement. The collaborative development of open-source integrated circuit (IC) designs is becoming increasingly feasible due to the rapid expansion of OpenPDKs recently offered by SkyWater, GF and IHP with an open schedule of MPW Runs for FMD-QNC project in 2024-25. This paper demonstrates the FOSS CAD/EDA contribution to the SPICE/Verilog-A modeling/standardization, compete IC design flow (Xschem, Qucs-S, ngspice, Xyce, OpenVAF, OpenEMS, Magic, kLayout, OpenRoad), in addition selected, open-source examples of analog/RF and digital IC designs will be presented.







 



Jan 29, 2025

ACM2 for IHP-SG13 OpenPDK

ACM2 MOSFET model examples for IHP-SG13 OpenPDK

The ACM2V0 model [1,2] was compared with measurements of the 130 nm BiCMOS open-source PDK IHP-SG13G2, as well as with MOS model provided by the PDK. Plots for IDvs.VG@VD= 0.05, 0.6 and 1.2 V and IDvs.VD@VG=0.185, 0.7 and 1.35 V W/L = 10 um / 120 nm

REFERENCE:
[1] Advanced Compact MOSFET model 2 (ACM2) https://github.com/ACMmodel/MOSFET_model
[2] Neto, Deni Germano Alves, Mohamed Khalil Bouchoucha, Gabriel Maranhão, Manuel J. Barragan, Márcio Cherem Schneider, Andreia Cathelin, Sylvain Bourdel, and Carlos Galup-Montoro. "Design-oriented single-piece 5-DC-parameter MOSFET model." IEEE Access (2024) doi:10.1109/ACCESS.2024.3417316


Jan 28, 2025

[paper] SPICE Modeling of a Radiation Sensor

Miloš Marjanović 1, Stefan D. Ilić 2, Sandra Veljković 1, Nikola Mitrović 1, Umutcan Gurer 3, Ozan Yilmaz 3, Aysegul Kahraman 4, Aliekber Aktag 3, Huseyin Karacali 3, Erhan Budak 3, Danijel Danković 1, Goran Ristić 1 and Ercan Yilmaz 3
The SPICE Modeling of a Radiation Sensor Based on a MOSFET
with a Dielectric HfO2/SiO2 Double-Layer
Sensors 2025, 25(2), 546; DOI:10.3390/s25020546

1 Department of Microelectronics, Faculty of Electronic Engineering, University of Niš, Serbia
2 Center of Microelectronic Technologies, Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Serbia
3 Faculty of Arts and Sciences, Bolu Abant Izzet Baysal University, Turkey
4 Department of Physics, Faculty of Arts and Sciences, Bursa Uludag University, Turkey

Abstract: We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO2/SiO2 double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO2, are enhanced by incorporating high-k dielectric materials such as HfO2 to reduce oxide thickness in modern radiation sensors. The fabrication steps of the sensor are outlined, and model parameters, including the threshold voltage and transconductance, are extracted based on experimental data. Experimental setups for measuring electrical characteristics and irradiation are described, and a method for determining model parameters dependent on the accumulated dose is provided. A SPICE model card is proposed, including parameters for two dielectric thicknesses: (30/10) nm and (40/5) nm. The sensitivities of the sensors are 1.685mV/Gy and 0.78mV/Gy, respectively. The model is calibrated for doses up to 20Gy, and good agreement between experimental and simulation results validates the proposed model.


FIG: (a) Block diagram of the radiation source setup; 
(b) radiation setup in the TENMAK lab.

The corresponding SPICE model card is presented below:
.MODEL RADFET PMOS VTO={if(TYPE==1,-0.493-(1.54e-3*DOSE),-0.65433-(7.54E-4*DOSE))}
+KP={if(TYPE==1,8.897e-6-(1.493e-8*DOSE),1.14E-5-(2.511E-9*DOSE))} L=50e-6 W=600e-6
+TPG=0 LAMBDA={if(TYPE==1,3.901E-2-(2.165E-4*DOSE),2.0115E-2-(1.8575E-4*DOSE))}

Acknowledgements: This research was funded by North Atlantic Treaty Organization (NATO) SPS MYP under grant number G5974, by the project “High-k Dielectric RADFET for Detection of RN Treats”, and supported by the Ministry of Science, Technological Development and Innovation of the Republic of Serbia [grant number 451-03-65/2024-03/200102 and grant number 451-03-66/2024-03/200026].

Jan 23, 2025

[CI Inovador] OpenPDK Introduction



INOVA-ME: Curso de Capacitação, Inovação, Gestão e Empreendedorismo em Microeletrônica

INOVA-ME é um dos polos de capacitação do Programa CI Inovador financiado pelo MCTI e coordenado pela Softex , executado pelo Instituto de Informática da Universidade Federal do Rio Grande do Sul (INF-UFRGS).




The OpenPDK Introduction is part of the CI Inovador course, 
scheduled for January 24, 2025, from 13:30 to 15:00 BRT.

The conference call platform is MCONF, accessible via the following link: https://mconf.ufrgs.br/webconf/inova-me

Agenda:
1. General Introduction and Technical Presentation (1 hour)
Wladek Grabinski: General introduction to FOSS EDA/CAD and OpenPDK (20-25 minutes)
Dr. Wladek Grabinski, a distinguished expert with over 30 years of international experience in semiconductor R&D, compact modeling, and custom IC design. Currently, leading engineering R&D at GMC Consulting, and supports IHP OpenPDK Initiative. Dr. Grabinski has worked with renowned institutions such as EPFL, Motorola, and Freescale. He is an accomplished author of multiple books on analog/RF modeling and a recognized leader in developing advanced SPICE models for nanoscale CMOS technologies. Dr. Grabinski's contributions continue to shape the field of analog and RF IC design in the OpenPDK domain.
Krzysztof Herman: Technical OpenPDK presentation
including design demos and an IHP overview (20-25 minutes)
Dr. Krzysztof Herman, a research associate specializing in OpenPDK development at IHP in Germany. With over a decade of experience, including roles as a professor and researcher in Europe and Latin America, Dr. Herman has expertise spanning telecommunications, ASIC design, and FPGA development. He has also contributed to Antarctic and polar research expeditions, showcasing his multidisciplinary approach and dedication to advancing both science and technology.
Q&A: 10 minutes

2. OpenPDK Brazil Discussion and Demonstration (30 minutes)
Francisco Brito: Real chip design demonstration using IHP OpenPDK (10-12 minutes)
Dr. Francisco Brito Filho, UFERSA, Professor and Head of the LIEB/LAMERF Research Labs. Dr. Brito holds a PhD in RF Microelectronics and has extensive expertise in RF/AMS IC design, instrumentation, and biomedical engineering. With experience in academia, industry, and entrepreneurship, Dr. Brito has worked on innovative projects ranging from CMOS-based RFICs to advanced biomedical equipment. His leadership and technical excellence continue to drive impactful research and development in microelectronics. He is already teaching microelectronics classes using OpenPDK and OpenSource tools.
Q&A: 3 minutes
Juan Brito: OpenPDK Brazil Discussion (10-12 minutes)
Dr. Juan Brito has over two decades in Semiconductors and Integrated Circuits, deep expertise in device engineering, analog design, and advanced IC testing. Dr. Brito has passion for continuous development is evidenced by contributions to academic publications and involvement in international student exchange programs. He is lookin for new challenges that leverage technical and managerial expertise to drive innovation and sustainable growth in the semiconductor industry particularly in the OpenPDK domain.
Q&A: 3 minutes

Jan 21, 2025

[paper] Nanowire Biosensor Analytical Model

Ashkhen Yesayan, Aleksandr Grabski, Farzan Jazaeri, Jean-Michel Sallese
Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects
IEEE TED (2025) DOI 10.1109/TED.2025.3526113

Abstract: Nanowire Field Effect Transistor (NWFET) biosensors are known to be highly sensitivity devices that can detect extremely low concentrations of biomolecules. In this paper, we present an analytical model alongside with numerical simulations to calculate the sensitivity of NWFET biosensors. The model accounts for biosensing dynamics as well as diffusion of ions in the solution and across the functionalized layer. The signal-to-noise ratio is also estimated, which gives a lower limit in terms of sensitivity. The model is physics based and is validated against a commercial multiphysics simulations and experimental data. It predicts the bio-sensitivity down to femtomolar concentration of biomolecules without any fitting parameter.

FIG: Schematic structure of device (a), the charge distribution in theoretical model (b) 
and Si NWFET sensitivity simulated with presented model (c)

Acknowledgement: This work was supported by the Science Committee of RA, in the frames of the research project No:21T-2B321.