[Mannerisms] Fable: The Game-Changer https://t.co/QU3QZ60wOC #semi https://t.co/Ep5PCyGbMa
— Wladek Grabinski (@wladek60) Mar 25, 2022
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March 25, 2022 at 09:29AM
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Mar 25, 2022
[Mannerisms] Fable: The Game-Changer
from Twitter https://twitter.com/wladek60
March 25, 2022 at 09:29AM
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Mar 24, 2022
[mos-ak] [online registration] Spring MOS-AK Workshop on April 1, 2022
Arbeitskreis Modellierung von Systemen und Parameterextraktion
Modeling of Systems and Parameter Extraction Working Group
Spring MOS-AK Workshop
April 1, 2022 (online)
Announcement and C4P
Online Abstract Submission is open (any related enquiries can be sent to absttracts@mos-ak.org)
List of MOS-AK invited speakers (tentative in alphabetic order) :
|
Online Event Registration is open; all registered participants will receive online access link 24h before the event (any related enquiries can be sent to registration@mos-ak.org)
Important Dates:
- Call for Papers: Feb. 2022
- 2nd Announcement: March 2022
- Final Workshop Program: March 28, 2022
- Spring MOS-AK Workshop: April 1, 2022
WG240322
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Mar 23, 2022
[paper] Review of AlGaN/GaN HEMTs Based Devices
Ahmed M. Nahhas
Review of AlGaN/GaN HEMTs Based Devices
American Journal of Nanomaterials. 2019, 7(1), 10-21
DOI: 10.12691/ajn-7-1-2
Department of Electrical Engineering, Umm Al Qura University, Makkah (SA)
Abstract: This paper presents a review of the recent advances of the AlGaN/GaN high-electron-mobility transistors (HEMTs) based devices. The AlGaN/GaN HEMTs have attracted potential for high frequency, voltage, power, temperature, and low noise applications. This is due to the superior electrical, electronic properties, high electron velocity of the GaN. These properties include the GaN wideband gap energy, electrical, optical and structural properties. The based structures of GaN such as AlGaN/GaN are driving the interest in the research areas of GaN HEMTs. Recently, the AlGaN/GaN HEMTs have gained a great potential in radio frequency (RF) and power electronics (PE) based devices and applications. The recent aspects of the AlGaN/GaN HEMTs devices are presented and discussed. The performance of different device demonstrated based on AlGaN/GaN HEMTs are reviewed. The structural, electrical, and optical properties of these devices are also reviewed.
Fig: Schematic of AlGaN/GaN HEMTs
Mar 22, 2022
Postdoctoral position on advanced semiconductor devices at URV, in Tarragona, Spain
The Nanoelectronic and Photonic Systems (NEPHOS) Group at the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV) in Tarragona, Spain, is looking for candidades for a Postdoctoral position funded by the Spanish Ministry of Science.
Candidates which obtained their Ph.D. between January 1, 2014 and December 31, 2019 can apply. The duration of this position is 3 years. Candidates must have performed significant contributions in the field of semiconductor devices during their Ph.D. or later, and this has to be demonstrated by a good number of publications.
Depending on the candidate's background, there are several options for the research project to carry out:
- Organic TFT technology: fabrication, characterization and modeling.
- Organic solar cells technology: fabrication, characterization and modeling.
- Modeling (in particular compact modeling) and electrical characterization of 2D semiconductor FETs.
- Modeling (in particular compact modeling) and electrical characterization of nanowire FETs.
The NEPHOS Group at URV is currently working on the physics, characterization and modeling (in particular compact modeling) of emerging devices, and also in the fabrication and characterization of nanostructured organic photovoltaic devices. Regarding emerging devices, the present interests of the group at URV are the characterization and modeling of nanowire MOSFETs, GaN HEMTs, Graphene and 2D semiconductor FETs and organic and oxide TFTs. Other interests are the fabrication of polymeric TFTs and the modeling of organic solar cells.
Candidates must send their CVs, by March 26 2022 to Prof. Benjamin Iñiguez (Fellow, IEEE)
Tarragona is about 100 Km south from Barcelona, on the coast (the so-called "Costa Daurada", Golden Coast). Traveling to Tarragona from Barcelona is easier. There are frequent direct buses between Tarragona and Barcelona Airport, and also frequent trains between Tarragona and Barcelona. Besides, from some European cities it is possible to fly to Reus Airport, which is about 10 Km from Tarragona.
Tarragona is one of the most important hubs of tourism in Europe, not only because of the nice beaches around the city, but also because of its historical landmarks.. Tarragona was a very important city of the Roman Empire. In 2000 UNESCO committee officially declared the Roman archaeological complex of Tarraco (name of Tarragona during the Roman Empire) a World Heritage Site. This recognition is intended to help ensure the conservation of the monuments, as well as to introduce them to the broader international public.
Mar 21, 2022
Build Your Own #OpenSource #Handheld #Linux PC with Raspberry Pi
Build Your Own #Handheld #Linux PC with Raspberry Pi and this #OpenSource Project - It's FOSS News https://t.co/O4EGxl3uEg #semi https://t.co/bQ7p6f235Y
— Wladek Grabinski (@wladek60) Mar 21, 2022
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March 21, 2022 at 05:34PM
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