Feb 11, 2022

[paper] Cantilever with Carbon Piezoresistor

Jongmoon Jang, Giulia Panusa, Giovanni Boero and Juergen Brugger 
SU-8 Cantilever with Integrated Pyrolyzed Glass-Like Carbon Piezoresistor
Microsyst Nanoeng 8, 22 (2022)
DOI:10.1038/s41378-022-00351-9

Abstract: Glass-like carbon (GC) is a nongraphitizing material composed entirely of carbon atoms produced from selected organic polymer resins by controlled pyrolysis in an inert atmosphere. The GC properties are a combination of the properties of glass, ceramic, and graphite, including hardness, low density, low thermal conductivity, high chemical inertness, biocompatibility, high electrical conductivity, and microfabrication process compatibility. Despite these unique properties, the application of GC in mechanical sensors has not been explored thus far. Here, we investigate the electrical, structural, and chemical properties of GC thin films derived from epoxy-based negative photoresist SU-8 pyrolyzed from 700 to 900°C. In addition, we fabricated microGC piezoresistors pyrolyzed at 700 and 900 °C and integrated them into nonpyrolyzed SU-8 cantilevers to create microelectromechanical systems (MEMS) mechanical sensors. The sensitivities of the GC sensor to strain, force, surface stress, and acceleration are characterized to demonstrate their potential and limits for electromechanical microdevices.

Fig: Design and layout of the glass-like carbon (GC)-based sensor:
a.) Schematic drawing of the GC strain sensor, and
b.) Enlarged optical microscopic image of a fabricated GC piezoresistor

Acknowledgements: The authors thank the Center of Micro/Nanotechnology (CMi) of EPFL for the microelectromechanical system (MEMS) fabrication support and Bio-Micro Robotics laboratory with Professor Hongsoo Choi of DGIST for the microforce probe system facility support. This work received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (Project “MEMS 4.0”, ERC-2016-ADG, Grant Agreement No. 742683) and the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No. 2020R1F1A107422211).

Feb 10, 2022

#SiC #CMOS Technology for High Temperatures



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February 10, 2022 at 12:55PM
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#Analog #IC #design #Hackathon Digital India



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[paper] Special Topic on Materials and Devices for 5G Electronics

Nathan D. Orloff1, Rick Ubic2, and Michael Lanagan3
Special topic on materials and devices for 5G electronics
Appl. Phys. Lett. 120, 060402 (2022); 
DOI: 10.1063/5.0079175
1 NIST, Colorado, USA
2 Boise State University, Idaho, USA
3 Penn State University, Pennsylvania, USA

Abstract: Next generation communications are inspiring entirely new applications in education, healthcare, and transportation. These applications are only possible because of improvements in latency, data rates, and connectivity in the latest generation. Behind these improvements are new materials and devices that operate at much higher frequencies than ever before, a trend that is likely to continue. Beyond these exciting applications, higher frequency millimeter waves (mmWaves) may also address a growing problem with capacity. Today, most capacity problems occur when large numbers of wireless connections or applications access the network at the same time at any single location. As wireless internet connections far surpass wired connections and wireless data usage has grown exponentially for more than 10 years,3 many believe that capacity problems will spread without access to new bandwidth.

FIG: A plot of the peak data rates vs the operating frequency 
where the diameter of the circle is the bandwidth.

Acknowledgement: Our [the editors] special thanks to Lesley Cohen, Editor-in-Chief, Susan Trolier-McKinstry, Associate Editor, and Jessica Trudeau and Emma Nicholson Van Burns for their technical assistance with publishing.


Feb 9, 2022

[paper] SPICE simulation of PIN diodes and IGBT devices

Manhong Zhang, Yi Zhai
Recovering the carrier number conservation in SPICE simulation of PIN diodes and IGBT devices
Solid-State Electronics
Available online 7 February 2022, 108239
DOI: 10.1016/j.sse.2022.108239
   
North China Electric Power University, Beijing 102206, China


Abstract: In SPICE simulations of PIN diodes and IGBT devices using finite difference method, one discretizes an undepleted N- region into several equally spaced nodes with a time-dependent distance of Δx(t). Then transforms the ambipolar diffusion equation, a time-space partial differential equation, into a set of time-dependent ordinary differential equations. However, the time-dependent property of Δx(t) destroys the carrier number conservation. In this paper, we propose an approach to account for the effect of the Δx(t) by introducing an auxiliary system. It has the same total current and the total carrier number in the undepleted N- region as the real system, but has different electron and hole current components. The difference is caused by adding compensation current terms with the equal amplitude and opposite sign to the electron and hole current terms in the auxiliary system. These compensation current terms are proportional to the boundary speed of the undepleted N- region and do not change the total current. The auxiliary system can be easily solved using SPICE behavior models and its carrier density is a good approximation to the real one. Our simulations show that the compensation current correction is important for fast switching PIN diodes, but may not be very important in IGBT devices due to their large gate-related capacitance.
FIG: SPICE simulation model of PIN diodes and IGBT devices