Nov 8, 2021

and in the same time



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November 08, 2021 at 02:08PM
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[Malinkiewicz' interview] We want to be a global leader



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November 08, 2021 at 02:04PM
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#SIA #EU #semi #chips #supplychains



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November 08, 2021 at 11:06AM
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#3nm Mac and iPhone chips coming as soon as 2023



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November 08, 2021 at 11:10AM
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Nov 7, 2021

[paper] 3nm Nano-Sheet FETs

Etienne SICARD* and Lionel TROJMAN**
Introducing 3-nm Nano-Sheet FET technology in Microwind
hal-03377556: Submitted on 14 Oct 2021

  
*INSA-Dgei, Toulouse (F)
**ISEP, Issy les Moulineaux (F)


Abstract: This paper describes the implementation of the novel Nano-sheet FET (NS-FET) for the 3-nm CMOS technology node in Microwind. After a general presentation of the electronic market and the roadmap to the atomic scale, design rules and basic metrics for the 3-nm node are presented. Concepts related to the design of NS-FET and design for manufacturing are also described. The performances of a ring oscillator, basic cells, sequential cells and a 6-transistor RAM memory are also analyzed.
Fig: A simple 3-stage ring oscillator based on compiled inverters “Fast” mode.

[ref] MICROWIND software allows the designer to simulate and design an integrated circuit at physical description level. Born in Toulouse (France), Microwind is an innovative CMOS design tool for educational market.