What is #TinyML, and why does it matter?

What is #TinyML, and why does it matter? https://t.co/6zq9Ar1ZU5 #semi https://t.co/Xqth7bzMYH

— Wladek Grabinski (@wladek60) Aug 5, 2021

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August 05, 2021 at 10:07AM
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Russian Forum "Microelectronics 2021

Russian Forum "Microelectronics 2021"

Preliminary Program

September 7-9, Moscow, JSC "ENPO SPELS"

The Scientific Conference Pre-session (based on Section 5)
Moderators: Bobkov S.G. IPPM RAS Nikiforov A.Yu. CEPE NRNU MEPhI

Section 1: Navigational communication VLSI and modules
Moderators: I. L. Korneev JSC NIIMA Progress Steshenko VB JSC "RKS"

Section 2: High performance computing systems
Moderators: Khrenov G.Yu. JSC "Baikal Electronics" Bychkov I.N. JSC "MCST"

Section 3: Information control and radio engineering systems
Moderators: Pereverzev A.L. NRU MIET Yakunin A.N. NRU MIET P.M. Eremeev JSC "Research Institute" Submicron "

Section 4: Technologies and components of micro- and nanoelectronics
Moderators: Shelepin N.A. JSC "NIIME" Putrya M.G. NRU MIET Egorov A.Yu. LLC "Connector Optics"

Section 5: Micro- and optoelectronic products for general and special purposes
Moderators: Bobkov S.G. IPPM RAS Nikiforov A.Yu. CEPE NRNU MEPhI

Section 6: Design and simulation systems for electronic components and systems
Moderators: Rusakov S.G. Corresponding member of RAS Zavalin Yu.V. JSC "NIIMA" Progress "

Section 7: Microwave integrated circuits and modules
Moderators: Minnebaev V.M. JSC "NPP" Pulsar " P.V. Panasenko JSC "NIIME" Mukhin I.I. JSC "NIIMA" Progress "

Section 8: Microsystems. Sensors and Actuators
Moderators: Timoshenkov S.P. NRU MIET Dyuzhev N.A. STC NMST

Section 9: Special technological equipment
Moderators: Biryukov M.G. JSC NIITM Alekseev A.N. CJSC "NTO"

Section 10: Neuromorphic computing. Artificial intelligence
Moderators: Kryzhanovsky B.V. FGU FSC NIISI RAS Tel'minov O.A. JSC "NIIME" Gornev E.S. JSC "NIIME"

Section 11: Quantum Technologies - Quantum Sensors
Moderators: Gorbatsevich A.A. FIAN, NRU MIET Bogdanov Yu.I. FTIAN, NRU MIET S.P. Kulik Moscow State University named after M.V. Lomonosov

IJHSES Special Issue Volume 29, Issue 01n04, 2020

IJHSES Special Issue on Nanotechnology for Electronics, Biosensors, 

Additive Manufacturing and Emerging Systems Applications 

Guest Editors: F. Jain, C. Broadbridge, M. Gherasimova and H. Tang

Volume 29, Issue 01n04 (March, June, September, December 2020) 

This Special issue on Nanotechnology for Electronics, Biosensors, Additive Manufacturing and Emerging Systems Applications comprises peer reviewed articles selected from the 29th annual symposium of the Connecticut Microelectronics and Optoelectronics Consortium (CMOC), virtually held on October 2, 2020 and hosted by Information Technology Staff, University of Connecticut (Storrs Campus).

Organized by a team of seven academic institutions and about eighteen companies across the United States, this symposium sign-posted the progress and development of state-of-arts research in high-speed electronics over the last 30 years.

Articles include keynote presentations by three experts in their field:

• Dr. H. Lee, Electronic and IR Sensing in Forensics, U. New Haven, and Henry Lee Center for Forensic Research
• Dr. E. Fossum, Quanta Image Sensor, Dartmouth College
• Dr. J. Chow, Quantum Computing, IBM Thomas J. Watson, Research Center

The papers presented span from novel materials and devices, biosensors and bio- nano- systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields, Systems for implementing data with security tokens; single chemical sensor for multi-analyte mixture detection; RF energy harvesters; additively manufactured RF devices for 5G, IoT, RFID and smart city applications are also included in this special issue on high performance materials for implementing high-speed electronic systems.

In the area of material synthesis, modeling of dislocations behavior in various II-VI and III-V heterostructures and their gettering at sidewall bringing novel approaches are also featured

Coming hot on the heels, are recent developments on high performance devices include equivalent circuits models at room and 4.2K; quantum dot nonvolatile memories, 3D- confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications.

In summary, the papers selected for this special issue cover various aspects of h performance materials and emerging devices for implementing high-speed electronic systems. We would like to take this opportunity to express our thanks to the authors, participants, and reviewers for their contributions and active participation, networking, and knowledge sharing on a variety of research areas.

#Efabless & #OpenROAD Advance Commercial #OpenSource #Chip #Design

#Efabless & #OpenROAD Advance Commercial #OpenSource #Chip #Design https://t.co/h6mSqWzJHh #semi https://t.co/u3TDibKq9I

— Wladek Grabinski (@wladek60) Jul 30, 2021

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July 30, 2021 at 06:04PM
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[special issue] on Modeling of μmWave and mmWave Electronic Devices for Wireless Systems

Guest editorial for the special issue 

on Modeling of μmWave and mmWave Electronic Devices for Wireless Systems: 

Connecting technologies to applications

Valeria Vadalà, Giovanni Crupi

First published: 27 July 2021; DOI: 10.1002/jnm.2940

The μmWave and mmWave frequencies have been historically associated with niche applications such as space and defense; however, in the last years wireless communications have caused a rapid growth of interest in mass-market applications, representing the enabling technology for the new Information Age where all “things” need to be connected. Internet of Things, Industry 4.0, and Smart Cities are portraits of this concept in different contexts, from entertainment to healthcare applications. This exciting scenario triggers the continuous increase of performance requirements such as huge bandwidth, low latency, and very high data rate of emerging wireless technologies (i.e., 5G and 6G). This special issue takes a step forward in the different branches of knowledge related to μmWave and mmWave devices, circuits, and systems, oriented to wireless applications from the device level up to the application level. From the reader's point of view, the goal is to drive to a comprehensive overview on salient aspects of these topics and to provide interesting hints to overcome the upcoming technological challenges.

REFERENCES:
[1] Cao K-J, Zhang A, Gao J-J. Sensitivity analysis and uncertainty estimation in small-signal modeling for InP HBT (invited paper). Int J Numer Model El. 2021; 34(5): 2851. DOI: 10.1002/jnm.2851
[2] Tang X, Yang T, Jia Y, Xu Y. FW-EM-based approach for scalable small-signal modeling of GaN HEMT with consideration of temperature-dependent resistances. Int J Numer Model El. 2021; 34(5):e2882. DOI: 10.1002/jnm.2882
[3] King JB. Efficient energy-conservative dispersive transistor modelling using discrete-time convolution and artificial neural networks. Int J Numer Model El. 2021; 34(5): 2894. DOI: 10.1002/jnm.2894
[4] Li Y, Mao S, Fu Y, et al. A scalable electrothermal model using a three-dimensional thermal analysis model for GaN-on-diamond high-electron-mobility transistors. Int J Numer Model El. 2021; 34(5):e2875. DOI: 10.1002/jnm.2875
[5] Alim MA, Ali MM, Crupi G. Measurement-based analysis of GaAs HEMT technologies: Multilayer D-H pseudomorphic HEMT versus conventional S-H HEMT. Int J Numer Model El. 2021; 34(5):e2873. DOI: 10.1002/jnm.2873
[6] Osmanoglu S, Ozbay E. From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuit. Int J Numer Model El. 2021; 34(5):e2859. DOI: 10.1002/jnm.2859
[7] Piacibello A, Costanzo F, Giofré R, et al. Evaluation of a stacked-FET cell for high-frequency applications (invited paper). Int J Numer Model El. 2021; 34(5):e2881. DOI: 10.1002/jnm.2881
[8] Wu M, Cai J, King J, Chen S, Su J, Cao W. Design of a multi-octave power amplifier using broadband load-pull X-parameters. Int J Numer Model El. 2021; 34(5):e2878. DOI: 10.1002/jnm.2878
[9] Abdulbari AA, Abdul Rahim SK, Soh PJ, Dahri MH, Eteng AA, Zeain MY. A review of hybrid couplers: State-of-the-art, applications, design issues and challenges. Int J Numer Model El. 2021; 34(5):e2919. DOI: 10.1002/jnm.2919
[10] Piltyay S, Bulashenko A, Sushko O, Bulashenko O, Demchenko I. Analytical modeling and optimization of new Ku-band tunable square waveguide iris-post polarizer. Int J Numer Model El. 2021; 34(5):e2890. DOI: 10.1002/jnm.2890
[11] Qas Elias BB, Soh PJ, Abdullah Al-Hadi A, Vandenbosch GAE. Design of a compact, wideband, and flexible rhombic antenna using CMA for WBAN/WLAN and 5G applications. Int J Numer Model El. 2020; 34(5):e2841. DOI: 10.1002/jnm.2841
[12] Zhang X, Cunjun R, Dai J, Ding Y, Ullah S, Kosar Fahad A. Design of a reconfigurable antenna based on graphene for terahertz communication. Int J Numer Model El. 2021; 34(5):e2911. DOI: 10.1002/jnm.2911
[13] Gatte MT, Soh PJ, Kadhim RA, Abd HJ, Ahmad RB. Modeling and performance evaluation of antennas coated using monolayer graphene in the millimeter and sub-millimeter wave bands. Int J Numer Model. 2021; 34(5):e2929. DOI: 10.1002/jnm.2929
[14] Xing C, Qi F, Liu Z, Wang Y, Guo S. Terahertz compressive imaging: understanding and improvement by a better strategy for data selection. Int J Numer Model El. 2021; 34(5):e2863. DOI: 10.1002/jnm.2863