Feb 8, 2021

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February 08, 2021 at 02:58PM
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[paper] Simulations of transient processes in the nc-MOS structures

D. Tanous, A. Mazurak and B. Majkusiak 
Simulations of transient processes and characteristics of the nc-MOS structures 
Microelectronic Engineering, 
Volume 178, 2017, pp/ 173-177, 
DOI: 10.1016/j.mee.2017.05.013 

Abstract: Experimentally measured capacitance-voltage and current-voltage characteristics of the metal-insulator-semiconductor structures with nanocrystals embedded in the insulator often exhibit formations which result from charging/discharging processes of the nanocrystals and are difficult to explain and predict intuitively. Time dependent simulations as presented in this paper can be helpful in their analysis. The paper presents a study of the impact of selected geometrical parameters on their characteristics with the bias voltage ramp rate as a parameter.
FIG: a.) nc-MIS Structure; b.) Bias voltage ramp stimulation; c.)  CV and IV Simulations results

[C4P] 32nd IEEE MIEL 2021

32nd IEEE International Conference on Microelectronics 
MIEL 2021 
from September 12th-14th, 2021 in Niš, Serbia  

Due to the unprecedented health, travel and social distance restrictions imposed in Serbia and all over the world as a result of the COVID-19 pandemic, all participants will be invited to join a virtual MIEL 2021.

Accepted papers will be published in the Proceedings of the MIEL 2021 Conference, and included in IEEE Xplore database, subject to regular registration of at least one of the authors before July 16th, 2021. We are pleased to invite you, as an expert in the field of microelectronics, to submit paper to MIEL 2021 Conference and to encourage colleagues to do it. The deadline for the submission of two page-extended summaries (including figures, tables, and references) is May 7th, 2021. Looking forward to receiving your abstract for MIEL 2021 Conference

MIEL 2021 Program Committee
  • Vojkan Davidović
  • Danijel Danković

Feb 7, 2021

Feb 5, 2021

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February 05, 2021 at 11:46AM
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