#TSMC's development of #2nm process technology, which is already out of its pathfinding mode, is ahead of schedule, according to industry sources https://t.co/7jiFBRomRy #semi https://t.co/ieDnhSHxZh

#TSMC's development of #2nm process technology, which is already out of its pathfinding mode, is ahead of schedule, according to industry sources https://t.co/7jiFBRomRy #semi pic.twitter.com/ieDnhSHxZh

— Wladek Grabinski (@wladek60) September 22, 2020

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from Twitter https://twitter.com/wladek60

September 22, 2020 at 11:20AM
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[paper] 2D Charge Density Wave Phases

Machine-Intelligence-Driven High-Throughput Prediction of 2D Charge Density Wave Phases

Arnab Kabiraj and Santanu Mahapatra*

J. Phys. Chem. Lett. 2020, 11, 15, 6291–6298

Publication Date:July 22, 2020

DOI: 10.1021/acs.jpclett.0c01846

*Nano-Scale Device Research Laboratory, IISc Bangalore, India

Abstract: Charge density wave (CDW) materials are an important subclass of two-dimensional materials exhibiting significant resistivity switching with the application of external energy. However, the scarcity of such materials impedes their practical applications in nanoelectronics. Here we combine a first-principles-based structure-searching technique and unsupervised machine learning to develop a fully automated high-throughput computational framework, which identifies CDW phases from a unit cell with inherited Kohn anomaly. The proposed methodology not only rediscovers the known CDW phases but also predicts a host of easily exfoliable CDW materials (30 materials and 114 phases) along with associated electronic structures. Among many promising candidates, we pay special attention to ZrTiSe4 and conduct a comprehensive analysis to gain insight into the Fermi surface nesting, which causes significant semiconducting gap opening in its CDW phase. Our findings could provide useful guidelines for experimentalists.

Fig: Top view of TaSe₂-H 3×3_ɸ-1.

Si2 VAMPyRE: compact model parser and checker

Si2 #Compact #Model #Coalition Offers VAMPyRE, the software is a standalone compact model parser and checker written in Python, to Members and Developers https://t.co/vPQWlcQ99l pic.twitter.com/gbUq5nBFOA

— Wladek Grabinski (@wladek60) September 21, 2020

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September 21, 2020 at 05:18PM
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[tutorial] next generation 3D nano device simulator

Single-electron transistor - laterally defined quantum dot - 3D Tutorial

Stefan Birner

https://www.nextnano.com

Single-electron transistor - laterally defined quantum dot In this tutorial, we simulate an AlGaAs/GaAs heterostructure grown along the z direction. This structure leads to a two-dimensional electron gas (2DEG). By appying a gate voltage on top of the structure in the (x,y) plane, one is able to deplete the 2DEG and a laterally defined QD is formed. By adjusting the gate voltage, one is able to tune the number of electrons that are inside the QD.

This figure shows the conduction band edge Ec(x,y) and the electron density n(x,y) for the 2DEG plane, i.e. at z = 8 nm below the GaAs/AlGaAs heterojuntion. The geometry of the top gates is indicated by the blue regions. The following figure shows the calculated conduction band edge and the electron density of the heterostructure. The results are similar to Fig. 4 in paper [1].

The following figure shows two 2D slices through the lateral (x,y) plane at a distance of 8 nm below the AlGaAs/GaAs interface. In the middle, the electron density is shown. The electron density has been calculated classically. At the bottom, the conduction band edge is shown. The results are similar to Fig. 5 in paper [1]. At the top, the four gates are shown.

REF:

[1] A. Scholze, A. Schenk, W. Fichtner; Single-Electron Device Simulation; IEEE TED 47, 1811 (2000)

[paper] OTFTs in Mechanical Sensors

Organic Thin Film Transistors in Mechanical Sensors 

Zachary A. Lamport, Marco Roberto Cavallari^2,3, Kevin A. Kam, 

Christine K. McGinn, Caroline Yu, and Ioannis Kymissis

DOI: 10.1002/adfm.202004700

¹Department of Electrical Engineering, Columbia University, USA
²Departamento de Engenharia de Sistemas Eletrônicos, EPU de São Paulo, Brazil
³Department of Renewable Energies. UNILA, Brazil

Abstract: The marriage of organic thin-film transistors (OTFTs) and flexible mechanical sensors has enabled previously restricted applications to become a reality. Counterintuitively, the addition of an OTFT at each sensing element can reduce the overall complexity so that large-area, low-noise sensors can be fabricated. The best-performing instance of this is the active matrix, used in display applications for many of the same reasons, and nearly any type of flexible mechanical sensor can be incorporated into these structures. In this Progress Report, some of the flexible sensor devices that have taken advantage of these mechanical properties are highlighted, examining the advantages that OTFTs offer in the hybrid integration of local amplification and switching. In particular, the current research on resistive pressure sensors, capacitive pressure sensors, resistive or piezoresistive strain sensors, and piezoelectric sensors is identified and enumerated.

Fig: Suspended-gate FET: a) Schematic illustration of device geometry; b) electrical equivalent circuit; c) pressure response of ID at constant VDS = VGS = −60 V

Acknowledgements C.M. received funding from the National Science Foundation Graduate Research Fellowship Program (DGE—1644869). Z.L. thanks Corning and the NSF under STTR 1914013 for financial support.