Organic Thin Film Transistors in Mechanical Sensors
Zachary A. Lamport, Marco Roberto Cavallari2,3, Kevin A. Kam,
Christine K. McGinn, Caroline Yu, and Ioannis Kymissis
DOI: 10.1002/adfm.202004700
1Department of Electrical Engineering, Columbia University, USA
2Departamento de Engenharia de Sistemas Eletrônicos, EPU de São Paulo, Brazil
3Department of Renewable Energies. UNILA, Brazil
Abstract: The marriage of organic thin-film transistors (OTFTs) and flexible mechanical sensors has enabled previously restricted applications to become a reality. Counterintuitively, the addition of an OTFT at each sensing element can reduce the overall complexity so that large-area, low-noise sensors can be fabricated. The best-performing instance of this is the active matrix, used in display applications for many of the same reasons, and nearly any type of flexible mechanical sensor can be incorporated into these structures. In this Progress Report, some of the flexible sensor devices that have taken advantage of these mechanical properties are highlighted, examining the advantages that OTFTs offer in the hybrid integration of local amplification and switching. In particular, the current research on resistive pressure sensors, capacitive pressure sensors, resistive or piezoresistive strain sensors, and piezoelectric sensors is identified and enumerated.
Fig: Suspended-gate FET: a) Schematic illustration of device geometry; b) electrical equivalent circuit; c) pressure response of ID at constant VDS = VGS = −60 V
Acknowledgements C.M. received funding from the National Science Foundation Graduate Research Fellowship Program (DGE—1644869). Z.L. thanks Corning and the NSF under STTR 1914013 for financial support.
