[virtual] ToM2020/2 Announcement

ToM2020/2 Course

September, 8th, 2020
    14.00-17.30    Danilo Gerna (Melexis Technologies), “Advanced Hall Element Based Magnetic Sensors Front End Design”

September, 9th, 2020
    9.00-12.30    Carlo Samori (Milan Politechnic), “PLL: From Analog to Digital and Recent Trends”
    14.00-17.30    Alex Tranca (Infineon), “Robust Design of Smart Power ICs for Automotive Applications, with Focus on Load Current Sensing”

September, 10th, 2020
    9.00-12.30    Alfio Dario Grasso (Univ. Catania), “Ultra-Low Power Amplifiers for IoT Nodes”
    14.00-17.30    Gabriella Ghidini (STMicroelectronics), “Dielectric Reliability in Microelectronics”

In this particular situation, the PhD School at University of Milan-Bicocca decided to fully support the costs of the ToM2020/2 course, whose participation will then be free-of-charge for the attendees. However, for proper managing internet access to the virtual ToM2020/2 course, registration is mandatory at the following website:
http://www.innotechevents.com/index.php?page=ToM/RegistrationForm.html

Only registered participants will receive access information for the course.
At the end of the course, an exam will be proposed for certifying the positive attendance (please register to the exam with the course registration).
We look forward to virtually meeting you !!!!

More information at:
http://www.innotechevents.com/index.php?page=ToM/ToM.html

[virtual] IEEE EDS DL Mini-Colloquium at MIXDES Wroclaw

EDS Distinguished Lecturer Mini-Colloquium 

"Semiconductor-based sensors - technology, modeling, applications" 

(virtual at MIXDES), June 27, 2020

Chairs: Wladek Grabinski, Daniel Tomaszewski

10.00-10.45	Arokia Nathan "Ultralow Power, High-Resolution Sensor Interfaces" EDS Distinguished Lecturer, Cambridge Touch Technologies, UK; E-mail: an299@cam.ac.uk
10.45-11.30	Mike Schwarz "Sensor Design – From Prototype to Series" Robert Bosch GmbH, 72703 Reutlingen,Germany; E-mail: Mike.Schwarz@de.bosch.com
12.00-12.45	Benjamin Iñíguez "Compact Modeling and Parameter Extraction for Oxide and Organic Thin Film Transistors (TFTs) from 150K to 350K" EDS Distinguished Lecturer, Department of Electrical, Electronics Engineering and Automatic Control Engineering, Universitat Rovira i Virgili, 43007 Tarragona, Spain; E-mail: benjamin.iniguez@urv.cat
12.45-13.30	Teoder Gotszalk " Microsystem Electronics and Photonics " Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Poland; E-mail: teodor.gotszalk@pwr.edu.pl
13.30-14.15	Mina Rais-Zadeh "Phase change electro-optical devices for space applications" (recorded) EDS Distinguished Lecturer, NASA Jet Propulsion Lab., California Institute of Techn., USA; E-mail: minar@umich.edu

#SilTerra - #MEMS Technology Roadmap https://t.co/X0g0M0ImoL #paper https://t.co/n0Nthns32a

#SilTerra - #MEMS Technology Roadmap https://t.co/X0g0M0ImoL #paper pic.twitter.com/n0Nthns32a

— Wladek Grabinski (@wladek60) June 19, 2020

from Twitter https://twitter.com/wladek60

June 19, 2020 at 10:29AM
via IFTTT

[Short Course] Modeling and Simulation of Nano-Transistors

Short Course

Modeling and Simulation of Nano-Transistors

6 - 10 July 2020 at Outreach Auditorium,IIT Kanpur

http://www.iitk.ac.in/nanolab/sc2020/

by Prof. Yogesh S. Chauhan

Nanolab, IIT Kanpur

http://home.iitk.ac.in/~chauhan/

Aim: VLSI design will soon use transistors whose size will be as small as 10nm. The aim of this short course is to educate and train bright minds on different aspects of Nano-transistors. Modeling especially compact modeling is the heart of circuit simulation. TCAD simulations are used for early device design and to understand the internal physics of transistor. Electrical characterization includes current and capacitance voltage measurement of transistor. RF measurement is an exciting area which involves understanding of devices as well as high frequency effects. This short course will cover various topics in modeling, simulation and characterization of transistors especially at nanoscale.

Topics: (1) VLSI design and Nanoelectronics, (2) Physics and Operation of MOSFET, (3) SPICE and Circuit simulation, (4) TCAD simulation: Theory and demonstration, (5) Compact Modeling: Theory and demonstration, (6) Scaling and Moore's Law, (7) Nano-Transistors: FinFET, FDSOI, Negative Capacitance FET, Nanosheet FETs, 2D-FETs etc. (8) Characterization: Current and capacitance measurement, (9) RF CMOS and GaN High Electron Mobility Transistors

Hands-on Sessions: (1) Verilog-A coding, (2) SPICE ckt. Simulation, (3) TCAD Simulation, (4) Parameter Extraction

Coordinator: Prof. Yogesh S. Chauhan Dept. of Electrical Engg., IIT Kanpur

Registration: This short course has been postponed to end of this year or early next year due to ongoing pandemic. New Dates will be announced once normalcy returns in the country.

A Benchmark Study Of Complementary-Field Effect Transistor (#FET) Process Integration Options: Comparing #Bulk vs. #SOI vs. DSOI Starting Substrates https://t.co/rYE24rym7L #paper https://t.co/T3ECdVJa5c

A Benchmark Study Of Complementary-Field Effect Transistor (#FET) Process Integration Options: Comparing #Bulk vs. #SOI vs. DSOI Starting Substrates https://t.co/rYE24rym7L #paper pic.twitter.com/T3ECdVJa5c

— Wladek Grabinski (@wladek60) June 17, 2020

from Twitter https://twitter.com/wladek60

June 17, 2020 at 05:02PM
via IFTTT