#paper: H. Cortes-Ordonez et al., "Parameter extraction and compact drain current model for IGZO transistor from 210K up to 370K," 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica, 2020, pp. 1-5. https://t.co/WDalcLFJsX https://t.co/FJGSnemXhj

#paper: H. Cortes-Ordonez et al., "Parameter extraction and compact drain current model for IGZO transistor from 210K up to 370K," 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica, 2020, pp. 1-5. https://t.co/WDalcLFJsX pic.twitter.com/FJGSnemXhj

— Wladek Grabinski (@wladek60) April 28, 2020

from Twitter https://twitter.com/wladek60

April 28, 2020 at 05:01PM
via IFTTT

#paper: X. Lu, M. Law, Y. Jiang, X. Zhao, P. Mak and R. P. Martins, "A 4um Diameter SPAD Using Less-Doped N-Well Guard Ring in Baseline 65nm CMOS," in IEEE TED, vol. 67, no. 5, pp. 2223-2225, May 2020. https://t.co/FFxEEIyh8J https://t.co/LGo5VTESKd

#paper: X. Lu, M. Law, Y. Jiang, X. Zhao, P. Mak and R. P. Martins, "A 4um Diameter SPAD Using Less-Doped N-Well Guard Ring in Baseline 65nm CMOS," in IEEE TED, vol. 67, no. 5, pp. 2223-2225, May 2020. https://t.co/FFxEEIyh8J pic.twitter.com/LGo5VTESKd

— Wladek Grabinski (@wladek60) April 27, 2020

from Twitter https://twitter.com/wladek60

April 27, 2020 at 11:37AM
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#paper: Y. Hernández-Barrios, A. Cerdeira, M. Estrada and B. Iñíguez, "Analytical Current–Voltage Model for Double-Gate a-IGZO TFTs With Symmetric Structure for Above Threshold," in IEEE TED, vol. 67, no. 5, pp. 1980-1986, May 2020. https://t.co/mJQkQo60Th https://t.co/Z1xMTrw56o

#paper: Y. Hernández-Barrios, A. Cerdeira, M. Estrada and B. Iñíguez, "Analytical Current–Voltage Model for Double-Gate a-IGZO TFTs With Symmetric Structure for Above Threshold," in IEEE TED, vol. 67, no. 5, pp. 1980-1986, May 2020. https://t.co/mJQkQo60Th pic.twitter.com/Z1xMTrw56o

— Wladek Grabinski (@wladek60) April 26, 2020

from Twitter https://twitter.com/wladek60

April 26, 2020 at 03:49PM
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#paper: L. Liu, W. Chen, X. Liu and G. Du, "Photoelectric Characteristic Evaluation of Different Structured UTBB MOSFETs," in IEEE TED, vol. 67, no. 5, pp. 1919-1923, May 2020 https://t.co/2onkfigdMS https://t.co/XWNv6uZML9

#paper: L. Liu, W. Chen, X. Liu and G. Du, "Photoelectric Characteristic Evaluation of Different Structured UTBB MOSFETs," in IEEE TED, vol. 67, no. 5, pp. 1919-1923, May 2020https://t.co/2onkfigdMS pic.twitter.com/XWNv6uZML9

— Wladek Grabinski (@wladek60) April 24, 2020

from Twitter https://twitter.com/wladek60

April 24, 2020 at 05:49PM
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Online Classes on The Principle of Semiconductor Devices

Professor Mansun Chan, UST (HK), has developed a 13 weeks online class on the principle of semiconductor devices.  Unlike tradition lectures, the class use extensive animations to help students to visualize the actions of carriers in a device.  The classes was divided into two part, part I on semiconductor carrier statistics, PN Junction, BJT and part II on MOSFET and advanced FET.

• Principle of Semiconductor Devices Part I: Semiconductors, PN Junctions and Bipolar Junction Transistors
  An intuitive approach to operational principles of semiconductor devices.The course covers PN junction diodes, optical sensors, solar cells, LEDs, and Bipolar Junction Transistors.
  https://www.edx.org/course/principle-of-semiconductor-devices-part-i-semiconductors-pn-junctions-and-bipolar-junction-transistors-1
• Principle of Semiconductor Devices Part II: Field Effect Transistors and MOSFETsAn intuitive approach to operational principles of semiconductor devices. The course covers MOS capacitors, charge coupled devices, classical MOSFETs, transistor scaling, short channel MOSFET, and nano-CMOS transistors.
  https://www.edx.org/course/principle-of-semiconductor-devices-part-ii-field-effect-transistors-and-mosfets-2

Meet your instructor:

Mansun Chan

Chair Professor, Department of Electronic and Computer Engineering

The Hong Kong University of Science and Technology

The Hong Kong University of Science and Technology