Papers in SSE (vol 57 , issue 1, March 2011)

Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

A. Tsormpatzoglou, D.H. Tassis, C.A. Dimitriadis, G. Ghibaudo, N. Collaert, G. Pananakakis


Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET

Adelmo Ortiz-Conde, Francisco J. García-Sánchez

Research highlights

► Single completely generic equation of channel potential for undoped asymmetric independently driven double-gate MOSFETs. ► Channel potential equation is based on complex variables and is valid for all values of front and back-gate bias. ► The unified nature of the proposed equation provides a better basis for global physical insight. ► Several examples, including the all important fully symmetric case, are analyzed.


 Compact modeling of CMOS transistors under variable uniaxial stress

Nicoleta Wacker, Harald Richter, Mahadi-Ul Hassan, Horst Rempp, Joachim N. Burghartz

Research highlights

► We propose a method to simulate the effect of uniaxial stress on MOSFETs. ► The method is valid for any drain current and stress directions in (001) Si plane. ► It can perform static and dynamic simulations, in linear and saturation regions. ► It is simulator-independent and does not depend on the source of uniaxial stress. ► It is adaptable to other bulk CMOS nodes and to other technologies such as SOI.


 A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

F. Lime, R. Ritzenthaler, M. Ricoma, F. Martinez, F. Pascal, E. Miranda, O. Faynot, B. Iñiguez

Research highlights

► Valid for long-channel undoped ADGMOSFETS with independent gate operation. ► Fully analytical and explicit derivation with no iterative solutions. ► Accessible front and back gate charges, potentials and currents. ► Unification of symmetric and asymmetric cases. ► Physical solutions similar to classical MOS theory.


In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation

B. Grandchamp, M.-A. Jaud, P. Scheiblin, K. Romanjek, L. Hutin, C. Le Royer, M. Vinet

Research highlights

► We performed 2D simulations of germanium-on-insulator fully-depleted pMOSFET. ► Interface traps, mobility and leakage were calibrated versus experimental data. ► The prediction of electrical characteristics is accurate for several gate lengths. ► These simulations help in finding guidelines for improving the on-state current.


 Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces   

G. Hamaide, F. Allibert, F. Andrieu, K. Romanjek, S. Cristoloveanu

Research highlights

► Biasing the back interface in accumulation while extracting carrier mobility in FD-SOI MOSFETs leads to underestimated values. ► Apparent mobility degradation with decreasing film thickness in ultra-thin SOI MOSFET or Pseudo-MOSFET measurement is due to an additional component of the vertical electric field. ► In Pseudo-MOSFET measurements, the additional component of the vertical electric field comes from the traps and charges at the free-surface of the sample. ► We propose a new model to take this additional component of the vertical electric field into account.

Is SPICE good enough for tomorrow's analog?

by Nagel, L.W.; McAndrew, C.C.;
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2010),
Digital Object Identifier: 10.1109/BIPOL.2010.5668096
Publication Year: 2010 , Page(s): 106 - 112

"The answer to the question posed in the title is an emphatic yes! Because SPICE is fairly general purpose and is not tied to any particular technology (not even only semiconductors), SPICE will play a significant role in the design of integrated circuits for a long time. SPICE will not be used to simulate billion transistor circuits, of course, but instead it will play a key role in developing the devices, device models, building blocks, and behavioral models for the building blocks for the billion transistor chips. SPICE will continue to play the role of the foundation of the integrated circuit design infrastructure." [Nagel, L.W.; McAndrew, C.C.]

[mos-ak] C4P MOS-AK/GSA Workshop at UPMC/LIP6 Paris on 7-8 April 2011

C4P MOS-AK/GSA Workshop at UPMC/LIP6 Paris on 7-8 April 2011
http://www.mos-ak.org/paris/

Together with the Organizing Committee and Extended MOS-AK/GSA TPC
Committee, we have pleasure to invite to the MOS-AK/GSA Workshop at
UPMC/LIP6 Paris on 7-8 April 2011

The MOS-AK/GSA Workshop is HiTech forum to discuss the frontiers of
the electron devices modeling with emphasis on simulation-aware
models. Original papers presenting new developments and advances in
the compact/spice modeling and its Verilog-A standardization are
solicited. The main topics of the workshop are: (but are not limited
to):
* Compact Modeling (CM) of the electron devices
* Verilog-A language for CM standardization
* New CM techniques and extraction software
* CM of passive, active, sensors and actuators
* Emerging Devices, CMOS and SOI-based memory cells
* Microwave, RF device modeling, high voltage device modeling
* Nanoscale CMOS devices and circuits
* Reliability and thermal management of electron devices
* Technology R&D, DFY, DFT and IC designs
* Foundry/Fabless interface strategies

The terms of participation:
Authors are asked to submit a short (~200words) abstract using on-line
submission form by MARCH.1st:
http://www.mos-ak.org/paris/abstracts.php

Intending authors should also note the following deadlines:
* Call for Papers - Feb.2011
* Notification of preliminary acceptance - March 2011
* Final Workshop Program - end of March 2011
* MOS-AK/GSA Workshop - 7-8 April 2011

Further details and updates http://www.mos-ak.org/paris/
On-line workshop registration http://www.mos-ak.org/paris/registration.php

Local Organizing Committee:
Marie-Minerve Louerat, UPMC/LIP6
Ramy Iskander, UPMC/LIP6

Technical Program Committee:
Marie-Minerve Louerat, UPMC/LIP6
Andrei Vladimirescu, ISEP/UCB
Costin Anghel, ISEP
Ramy Iskander, UPMC/LIP6

Extended MOS-AK/GSA Committee:
Lisa Tafoya, Vice President, Global Semiconductor Alliance (GSA)
Chelsea Boone, GSA; Director of Research
Kayal Rajendran, GSA; Senior Research Analyst
Wladek Grabinski, GMC Suisse; MOS-AK/GSA Group Manager
MOS-AK/GSA North America:
Chair: Pekka Ojala, Exar Corporation
Co-Chair: Geoffrey Coram, Analog Devices
Co-Chair: Prof. Jamal Deen, U.McMaster
Roberto Tinti, Agilent EEsof Division
MOS-AK/GSA South America:
Chair: Prof. Gilson I Wirth; UFRGS; Brazil
Co-Chair: Prof. Carlos Galup-Montor, UFSC; Brazil
Sergio Bampi, UFRGS, Brazil
Antonio Cerdeira Altuzarra, Cinvestav - IPN, Mexico
MOS-AK/GSA Europe:
Chair: Ehrenfried Seebacher, austriamicrosystems AG
Co-Chair: Alexander Petr, XFab
Co-Chair: Prof. Benjamin Iniguez, URV
James Victory, Sentinel-IC
MOS-AK/GSA Asia/Pacific:
Chair: Goichi Yokomizo, STARC, Japan
Co-Chair: Sadayuki Yoshitomi, Toshiba, Japan
Co-Chair: Xing Zhou, NTU, Singapore
A.B. Bhattacharyya, JIIT, India

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IEEE SCV EDS: February 8 Photovoltaic Technology Talk

Talk on photovoltaic technology on Feb. 8th. Module reliability is a key issue in photovoltaic technology.

Feb 8th:

Dr. Glenn Alers – UC Santa Cruz,

“Photovoltaic Module Reliability and Failure Analysis: Enduring a storm”

(Next month event) March 1st:

Dr. Geert Vandenberghe, IMEC,

“Lithography Options for 22nm and Beyond”

More information at the IEEE Santa Clara Valley EDS Chapter Home Page
http://www.ewh.ieee.org/r6/scv/eds/

Molybdenite touted as 'material to revolutionize electronics'

Molybdenite touted as 'material to revolutionize electronics': "A material called molybdenite is being touted by researchers as having distin..."