A. Tsormpatzoglou, D.H. Tassis, C.A. Dimitriadis, G. Ghibaudo, N. Collaert, G. Pananakakis
Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET
Adelmo Ortiz-Conde, Francisco J. García-Sánchez
Research highlights► Single completely generic equation of channel potential for undoped asymmetric independently driven double-gate MOSFETs. ► Channel potential equation is based on complex variables and is valid for all values of front and back-gate bias. ► The unified nature of the proposed equation provides a better basis for global physical insight. ► Several examples, including the all important fully symmetric case, are analyzed.
Compact modeling of CMOS transistors under variable uniaxial stress
Nicoleta Wacker, Harald Richter, Mahadi-Ul Hassan, Horst Rempp, Joachim N. Burghartz
Research highlights► We propose a method to simulate the effect of uniaxial stress on MOSFETs. ► The method is valid for any drain current and stress directions in (001) Si plane. ► It can perform static and dynamic simulations, in linear and saturation regions. ► It is simulator-independent and does not depend on the source of uniaxial stress. ► It is adaptable to other bulk CMOS nodes and to other technologies such as SOI.
A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation
F. Lime, R. Ritzenthaler, M. Ricoma, F. Martinez, F. Pascal, E. Miranda, O. Faynot, B. Iñiguez
Research highlights► Valid for long-channel undoped ADGMOSFETS with independent gate operation. ► Fully analytical and explicit derivation with no iterative solutions. ► Accessible front and back gate charges, potentials and currents. ► Unification of symmetric and asymmetric cases. ► Physical solutions similar to classical MOS theory.
In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation
B. Grandchamp, M.-A. Jaud, P. Scheiblin, K. Romanjek, L. Hutin, C. Le Royer, M. Vinet
Research highlights► We performed 2D simulations of germanium-on-insulator fully-depleted pMOSFET. ► Interface traps, mobility and leakage were calibrated versus experimental data. ► The prediction of electrical characteristics is accurate for several gate lengths. ► These simulations help in finding guidelines for improving the on-state current.
Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces
G. Hamaide, F. Allibert, F. Andrieu, K. Romanjek, S. Cristoloveanu