ICECS 2019 paper deadline submission is approaching fast: July 15th, 2019
Please distribute this reminder to possible contributors and interested researchers and colleagues. Topics of interest include but are not limited to:
• Analog/mixed-signal/RF circuits
• Biomedical and Bio-Inspired Circuits and Systems
• EDA, Test and Reliability
• Digital circuits and systems
• Linear and Non-linear Circuits
• Low-Power Low-Voltage Design
• Microsystems
• Neural networks, Machine and Deep Learning
• Sensors and Sensing Systems
• Signal Processing, Image and Video
• VLSI Systems and Applications
The technical committee invites authors to submit 4-page papers in standard IEEE double-column format, including references, figures and tables, to clearly present the work, methods, originality, significance and applications of the techniques discussed.
Maurizio Valle; IEEE ICECS 2019 General Chair
https://www.ieee-icecs2019.org/
Jul 12, 2019
Jul 8, 2019
Leti Workshop at SISPAD 2019
Leti is pleased to invite you to attend our ‘Advanced Simulations for Emerging Non-Volatile Memory Technologies’ seminar, which is organized as an official satellite event of the 2019 IEEE SISPAD Conference (http://www.sispad2019.org). By the proposed seminar, we will emphasize how simulation and modeling support memory technology developments and device behavior understanding.
This event will held on Tuesday, September 3rd from 5:00 PM to 7:30 PM, Palazzo di Toppo Wassermann, Università degli Studi di Udine, Udine, Italy (i.e. at the SISPAD 2019 conference location).
PROGRAM
- Welcome and Introduction – T. Poiroux
- Innovative non-volatile memory technologies: a revolution for the storage towards a memory that thinks – G. Navarro
- Electro-thermal and material simulations for PCM – O. Cueto
- Multiphase field method for the simulation of the complex phase changes in PCM – R. Bayle
- Invited talk: Self-consistent TCAD simulation of chemical reactions within electronic devices. Application to CBRAM and OxRAM – Silvaco
- Networking cocktail
Registration is free but, due to limited seats, please register just sending an email to thierry.poiroux@cea.fr and sebastien.martinie@cea.fr.
Feel free to share this invite with your colleagues !
Jun 17, 2019
[open source paper] Open-source circuit simulation tools for RF compact semiconductor device modelling
Wladek Grabinski (editor), Mike Brinson, Paolo Nenzi, Francesco Lannutti, Nikolaos Makris, Angelos Antonopoulos and Matthias Bucher
September 2014
DOI: 10.1002/jnm.1973
SUMMARY: MOS-AK is a European, independent compact modelling forum created by a group of engineers, researchers and compact modelling enthusiasts to promote advanced compact modelling techniques and model standardization using high level behavioral modelling languages such as VHDL-AMS and Verilog-A. This invited paper summarizes recent MOS-AK open source compact model standardization activities and presents advanced topics in MOSEFT modelling, focusing in particular on analogue/RF applications. The paper discusses links between compact models and design methodologies, finally introducing elements of compact model standardization. The open source CAD tools: Qucs, QucsStudio and ngspice all support Verilog-A as a hardware description language for compact model standardization. Latter sections of this paper describe a Verilog-A implementation of the EKV3 MOS transistor model. Additionally, the simulated RF model performance is evaluated and compared with experimental results for 90nm CMOS technology.
KEYWORDS: CAD; GNU; Qucs; QucsStudio; ngspice; compact modeling; EKV3; RF; MOSFET; Verilog-A
Jun 14, 2019
[book] POWER/HVMOS Devices Compact Modeling
POWER/HVMOS Devices Compact Modeling
Wladyslaw Grabinski and Thomas Gneiting
Editors
Book 7 Citations; 119 Readers; 2 Reviews; 6k+ Downloads
DOI: 10.1007/978-90-481-3046-7
Since its online publication on Jun 10, 2010, there have been a total of 6452 chapter downloads for your eBook on SpringerLink. The table below shows the download figures for the last years:
| Year | Usage |
|---|---|
2018
|
656
|
2017
|
766
|
2016
|
843
|
2015
|
912
|
2014
|
1333
|
2013
|
658
|
2012
|
420
|
2011
|
401
|
2010
|
463
|
Jun 13, 2019
#XFAB and #Efabless developed the #opensource RISC-V microcontroller, called Raven, in less than three months https://t.co/2kEZVEEZum https://t.co/oWoYlMjk4o
#XFAB and #Efabless developed the #opensource RISC-V microcontroller, called Raven, in less than three months https://t.co/2kEZVEEZum pic.twitter.com/oWoYlMjk4o
— Wladek Grabinski (@wladek60) June 13, 2019
from Twitter https://twitter.com/wladek60
June 13, 2019 at 10:05PM
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Jun 11, 2019
[mos-ak] [Final Program] 4th Sino MOS-AK Workshop Chengdu, June 20-22, 2019
4th Sino MOS-AK Workshop
UESTC 电子科技大学 Chengdu, June 20-22, 2019
After successful series of MOS-AK workshops in Shanghai, Hangzhou and Beijing, our next scheduled, subsequent 4th Sino MOS-AK Workshop at UESTC 电子科技大学 Chengdu, aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and its Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and TCAD/EDA tool developers and vendors. The MOS-AK workshop program is available online: <http://www.mos-ak.org/chengdu_2019/> (see also below)
会议场所：电子科技大学图书馆求实厅（图书馆旁博物馆二楼）UESTC Library Realistic office (the second floor of the museum next to the library)<http://www.xmodtech.cn/Workshop-Address>
Online Registration is still open
(any related enquiries can be sent to Yuan Yao mobile:13086679508)
Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication
in a special issue of the International Journal of High Speed Electronics and Systems
in a special issue of the International Journal of High Speed Electronics and Systems
Recommended hotels
酒店：成都新希望高新中心假日酒店Hotel: Holiday Inn Chengdu High-Tech Center地址：中国四川省成都市郫都区西芯大道1号附1号Address: No.1-1 Xixin Avenue Pidu District Chengdu Chinamore at: <http://www.xmodtech.cn/HOTEL2>
Prof. Yuhang Xu, UESTC
Dr. Min Zhang, XMOD
and W.Grabinski
on the behalf of International MOS-AK Committee
WG110619
Final MOS-AK Program Announcement
| 20th JUNE | MOS-AK Tutorial Day |
| 9:00-11:45 | Modeling of Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wafer circuits Andreas Pawlak Infineon AG |
| 13:00-16:15 | 1. Radar frontends for ranging and speed measurements operating at 24GHz, 60GHz and 122GHz ISM frequency bands 2. Radar frontends for MIMO radars operating at 24GHz, 60GHz, 122GHz and 245GHz ISM frequency bands Wojciech Debski Silicon Radar GmbH |
| 21st JUNE | 1st Day of MOS-AK Workshop |
| 8:30-9:20 | WORKSHOP CHECK IN |
| 9:30-9:35 | MOS-AK Opening Speech TBD UESTC |
| 9:35-9:40 | MOS-AK Review & Outlook Min Zhang, Wladek Grabinski XMOD, MOS-AK |
| 9:40-10:25 | The Model and Algorithm Prototyping Platform (invited talk) Jaijeet Roychowdhury U.C.Berkely |
| 10:25-10:50 | Device modeling Eco-system Driven by Learning-based algorithms Yanfeng Li Platform-DA |
| 10:50-11:05 | Tea break |
| 11:05-11:50 | Simulation and Modeling of Dynamic Systems with Time Varying device Characteristics (invited talk) Masun Chan HKUST |
| 11:50-12:00 | Group photo |
| 12:00-13:30 | Lunch |
| 13:30-14:00 | Advanced TFT Modeling Techniques for GOA Driver Circuit Design Optimization (invited talk) An-Thung Cho, Lifeng Wu HuaDa Empyrean software, Chongqing HKC |
| 14:00-14:25 | Active Device Channel spice thermal modeling and parameter extraction Fujiang Lin USTC |
| 14:25-14:50 | Simulation-Based Reliability Analysis for Advanced Designs and Applications Xugang Shen Synopsys, Inc. |
| 14:50-15:10 | Tea break |
| 15:10-15:55 | Silicon intergrated magneto-optical nonreciprocal photonic devices (invited talk) Lei Bi UESTC |
| 15:55-16:20 | An Analysis of DG SOI MOSFET Modeling and Simulation with PSP, BSIM-IMG and HiSIM_SOTB GuoFang Wang, Jun Liu HDU |
| 16:20-16:45 | TCAD-Based Statistical Modelling Methodology for Nanoscale FinFET Variability Guo Ao ICRD |
| 16:45-17:10 | Characterization and Modeling of the Reverse behavior of a Vertical Power MOSFET Lixi Yan Stuttgart University |
| 17:10-17:35 | An Industry Standard Model Including Fast and Extended Range Core with Improved Mobility and Noise effect Chetan Kumar Dabhi IITK |
| 17:35-18:30 | MOS-AK Compact Modeling Round-Table Forum Min Zhang, Wladek Grabinski XMOD, MOS-AK |
| 18:30-20:00 | MOS-AK Gala Dinner |
| 22nd JUNE | 2nd Day of MOS-AK Workshop |
| 8:30-9:20 | WORKSHOP CHECK IN |
| 9:30-10:15 | Negative Capacitance FET and Nanowire/Nanosheet FET modeling (invited talk) Yogesh Chauhan IITK |
| 10:15-10:40 | An Simulation Platform for IGBT Module Electrothermal Analysis Chen Shen Cogenda |
| 10:40-11:00 | Tea break |
| 11:00-11:45 | Artificial Neural Networks for Microwave Modeling and Design (invited talk) Qijun Zhang Carleton University |
| 11:45-12:10 | A transient ionizing Radiation Spice model for PDSOI MOSFET Jianhui Bu IME Chinese Academy |
| 12:10-13:30 | Lunch |
| 13:30-14:15 | Quasi-physical Zone division (QPZD) model for microwave wide-band-gap semiconductor technology (invited talk) Yuehang Xu UESTC |
| 14:15-14:40 | RF GaN Device model survey and model parameter extraction flows Raj Sodhi Keysight |
| 14:40-15:05 | Charaterization and modeling of Memory effects for GaN HEMTs ZhiFu Hu HSRI |
| 15:05-15:25 | Tea break |
| 15:25-15:50 | Key Technology to GaN-based mm-Wave Devices and MMIC's (invited talk) Xiaohua Ma Xidian University |
| 15:50-16:15 | A Dimension-Reduction Method for the Thermal Modeling of InGaP/GaAs HBTs Wenrui Hu, Yongxin Guo NUS |
| 16:15-16:40 | DC and RF Modeling of CMOS Schottky Diodes Wenyuan Zhang, Yan Wang Tsinghua University |
| 16:45-17:10 | RF GaN Device modeling for MMIC design Chujun Wang CETC 55 |
| 17:10-17:15 | MOS-AK 2020 Min Zhang, Wladek Grabinski XMOD, MOS-AK |
| End of the MOS-AK Chengdu Workshop |
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S. Li etal. A Buffer-Less Wideband Frequency Doubler in 45nm SOI with Transistor Multi-Port Waveform Shaping Achieving 25% Drain Efficiency and 46-89GHz Instantaneous Bandwidth in IEEE Solid-State Circuits Letters. doi: 10.1109/LSSC.2019.2918943 https://t.co/buZkWbSAvo #paper https://t.co/dEPj5OG5Vb
S. Li etal. A Buffer-Less Wideband Frequency Doubler in 45nm SOI with Transistor Multi-Port Waveform Shaping Achieving 25% Drain Efficiency and 46-89GHz Instantaneous Bandwidth in IEEE Solid-State Circuits Letters.
— Wladek Grabinski (@wladek60) June 11, 2019
doi: 10.1109/LSSC.2019.2918943 https://t.co/buZkWbSAvo #paper pic.twitter.com/dEPj5OG5Vb
from Twitter https://twitter.com/wladek60
June 11, 2019 at 02:22PM
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Jun 10, 2019
#Medicine needs to embrace #opensource https://t.co/zEIjyMOcht https://t.co/W4RClFXRuv
#Medicine needs to embrace #opensource https://t.co/zEIjyMOcht pic.twitter.com/W4RClFXRuv
— Wladek Grabinski (@wladek60) June 10, 2019
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June 10, 2019 at 09:07PM
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#Qualcomm backs #Sifive, #opensource alternative to ARM - Gizmochina https://t.co/vuBycJuVrG
#Qualcomm backs #Sifive, #opensource alternative to ARM - Gizmochina https://t.co/vuBycJuVrG
— Wladek Grabinski (@wladek60) June 10, 2019
from Twitter https://twitter.com/wladek60
June 10, 2019 at 07:29PM
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Where Open Hardware Is Today | FOSS Force by @bbyfield. #paper https://t.co/dBp48r3axq
Where Open Hardware Is Today | FOSS Force by @bbyfield. #paper https://t.co/dBp48r3axq
— Wladek Grabinski (@wladek60) June 10, 2019
from Twitter https://twitter.com/wladek60
June 10, 2019 at 01:16PM
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Jun 6, 2019
You Don’t Need That Bulky CRT #Oscilloscope Anymore https://t.co/UFW4yYoPcS #opensource https://t.co/CqVdDKnPQr
You Don’t Need That Bulky CRT #Oscilloscope Anymore https://t.co/UFW4yYoPcS #opensource pic.twitter.com/CqVdDKnPQr
— Wladek Grabinski (@wladek60) June 6, 2019
from Twitter https://twitter.com/wladek60
June 06, 2019 at 12:06PM
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Modeling Emerging Semiconductor Devices for Circuit Simulation https://t.co/QMvNfZ9vsl #paper https://t.co/1gWFMFxzmq
Modeling Emerging Semiconductor Devices for Circuit Simulation https://t.co/QMvNfZ9vsl #paper pic.twitter.com/1gWFMFxzmq
— Wladek Grabinski (@wladek60) June 6, 2019
from Twitter https://twitter.com/wladek60
June 06, 2019 at 10:03AM
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[paper] Novel General Compact Model Approach
A Novel General Compact Model Approach for 7nm Technology Node Circuit Optimization from Device Perspective and Beyond
Qiang Huo, Zhenhua Wu, Weixing Huang, Xingsheng Wang, Senior Member, IEEE, Geyu Tang, Jiaxin Yao, Yongpan Liu, Feng Zhang, Ling Li, and Ming Liu, Fellow,IEEE
Abstract: This work presents a novel general compact model for 7nm technology node devices like FinFETs. As an extension of previous conventional compact model that based on some less accurate elements including one-dimensional Poisson equation for three-dimensional devices and analytical equations for short channel effects, quantum effects and other physical effects, the general compact model combining few TCAD calibrated compact models with statistical methods can eliminate the tedious physical derivations. The general compact model has the advantages of efficient extraction, high accuracy, strong scaling capability and excellent transfer capability. As a demo application, two key design knobs of FinFET and their multiple impacts on RC control ESD power clamp circuit are systematically evaluated with implementation of the newly proposed general compact model, accounting for device design, circuit performance optimization and variation control. The performance of ESD power clamp can be improved extremely. This framework is also suitable for pathfinding researches on 5nm node gate-all-around devices, like nanowire (NW) FETs, nanosheet (NSH) FETs and beyond.
Index Terms: General compact model, FinFET, ESD power clamp, 7 nm technology node and beyond.
Fig. (A) The schematic of partial parameters of FinFET. (B) Key design rules of 7nm node FinFET as according to [1].
Access: https://arxiv.org/ftp/arxiv/papers/1905/1905.11207.pdf
REF: [1] S. Narasimha et al.“A 7nm CMOS technology platform for mobile and high performance compute application,” IEEE International Electron Devices Meeting (IEDM), Dec. 2017, pp. 29.5.1-29.5.4, doi: 10.1109/IEDM.2017.8268476.
[paper] Analogue and RF performances of Fully Depleted SOI MOSFET
Jean-Pierre Raskin1
1Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain (UCLouvain), Place du Levant, 3, Maxwell Building, bte L5.04.04, office B.327, B-1348 Louvain-la-Neuve, Belgium
ABSTRACT. Performance of RF integrated circuit (IC) is directly linked to the analogue and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today Partially Depleted (PD) SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance operating at lower power consumption and in the millimeter-waves range. Fully Depleted (FD) SOI MOSFET is a quite promising candidate for the development of these future wireless communication systems. Most of the reported data on FD SOI concern their digital performance. In this paper, their analogue/RF behaviour is described and compared with bulk MOSFETs. Self-heating issue, non-linear behaviour as well as high frequency performance at cryogenic temperature for FD SOI MOSFET are discussed. Finally, a brief summary of the published RF and millimeter-waves ICs based on FD SOI technology is presented.
KEYWORDS. Silicon-on-Insulator (SOI), Fully Depleted (FD), high frequency behaviour, Radio Frequency (RF), millimeter-waves, analogue/RF performances, self-heating, non-linear behaviour, cryogenic temperature, Integrated Circuits (ICs).
ACCESS: http://www.openscience.fr/IMG/pdf/iste_componano19v2n1_5.pdf
FIG: Simplified cross section of FD SOI nMOSFET with back-gate (BGN).
ACCESS: http://www.openscience.fr/IMG/pdf/iste_componano19v2n1_5.pdf
May 31, 2019
As IEEE enters U.S/Huawei fray, Chinese editorial board member resigns https://t.co/piWApiqC0F #paper
As IEEE enters U.S/Huawei fray, Chinese editorial board member resigns https://t.co/piWApiqC0F #paper
— Wladek Grabinski (@wladek60) May 31, 2019
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May 28, 2019
#Taiwan #Startup Plan Emulates #MIT, #Stanford https://t.co/BIMmAKI9iu #paper https://t.co/w1Qvi0LmT7
#Taiwan #Startup Plan Emulates #MIT, #Stanford https://t.co/BIMmAKI9iu #paper pic.twitter.com/w1Qvi0LmT7
— Wladek Grabinski (@wladek60) May 28, 2019
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May 28, 2019 at 09:19AM
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#Xyce Binaries, building and more information including documentation, build instructions and binary executables—see the Xyce Homepage at #Sandia National Laboratories.” https://t.co/AhuZrAsuH7 #paper https://t.co/MGuIcsBdnx
#Xyce Binaries, building and more information including documentation, build instructions and binary executables—see the Xyce Homepage at #Sandia National Laboratories.” https://t.co/AhuZrAsuH7 #paper pic.twitter.com/MGuIcsBdnx
— Wladek Grabinski (@wladek60) May 28, 2019
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May 28, 2019 at 08:54AM
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May 27, 2019
15 Best Free Linux #Bioinformatics Tools https://t.co/DalDhCPate #paper
15 Best Free Linux #Bioinformatics Tools https://t.co/DalDhCPate #paper
— Wladek Grabinski (@wladek60) May 27, 2019
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May 27, 2019 at 03:29PM
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May 17, 2019
X. Liu, T. Ytterdal, V. Y. Kachorovskii and M. S. Shur, "Compact Terahertz #THz #SPICE/ADS Model," in IEEE Transactions on Electron Devices, vol. 66, no. 6, pp. 2496-2501, June 2019. doi: 10.1109/TED.2019.2911485 #paper
X. Liu, T. Ytterdal, V. Y. Kachorovskii and M. S. Shur, "Compact Terahertz #THz #SPICE/ADS Model," in IEEE Transactions on Electron Devices, vol. 66, no. 6, pp. 2496-2501, June 2019.
— Wladek Grabinski (@wladek60) May 17, 2019
doi: 10.1109/TED.2019.2911485 #paper
from Twitter https://twitter.com/wladek60
May 17, 2019 at 04:00PM
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May 16, 2019
Bashir, MA, Wu, Y, Liu, J, Zhao, C, Tang, H, Kang, K. A millimeter‐wave #mmW scalable small signal model of #RF #CMOS transistor against number of fingers. Int J Numer Model. 2019;e2608. https://t.co/bs9Keh4m6Y #paper https://t.co/yJkhFNoL7s
Bashir, MA, Wu, Y, Liu, J, Zhao, C, Tang, H, Kang, K. A millimeter‐wave #mmW scalable small signal model of #RF #CMOS transistor against number of fingers. Int J Numer Model. 2019;e2608. https://t.co/bs9Keh4m6Y #paper pic.twitter.com/yJkhFNoL7s
— Wladek Grabinski (@wladek60) May 16, 2019
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May 16, 2019 at 08:30PM
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Fable: The #MOS #Pioneer https://t.co/IVvGuIXw63 #paper https://t.co/PQv80O8jiF
Fable: The #MOS #Pioneer https://t.co/IVvGuIXw63 #paper pic.twitter.com/PQv80O8jiF
— Wladek Grabinski (@wladek60) May 16, 2019
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May 16, 2019 at 08:21PM
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May 15, 2019
The #Feynman #Lectures on Physics are now #free on the web #Physics #HTML5 #Books @Caltech https://t.co/blzVNd0g5E #paper https://t.co/06KmELT2O6
The #Feynman #Lectures on Physics are now #free on the web #Physics #HTML5 #Books @Caltech https://t.co/blzVNd0g5E #paper pic.twitter.com/06KmELT2O6
— Wladek Grabinski (@wladek60) May 14, 2019
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May 15, 2019 at 12:46AM
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May 11, 2019
European Commission #EC #conference dedicated to #OpenSource https://t.co/Y9VF24fF5K
European Commission #EC #conference dedicated to #OpenSource https://t.co/Y9VF24fF5K
— Wladek Grabinski (@wladek60) May 11, 2019
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May 11, 2019 at 02:31PM
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#Intel to Introduce Chips Based on #7nm in #2021 https://t.co/4xEVHZwdoo #paper
#Intel to Introduce Chips Based on #7nm in #2021 https://t.co/4xEVHZwdoo #paper
— Wladek Grabinski (@wladek60) May 11, 2019
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May 11, 2019 at 01:58PM
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May 10, 2019
Three Reasons Why You Should NOT Miss #56DAC https://t.co/B9emrCspQm #paper
Three Reasons Why You Should NOT Miss #56DAC https://t.co/B9emrCspQm #paper
— Wladek Grabinski (@wladek60) May 10, 2019
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May 10, 2019 at 05:51PM
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May 9, 2019
#RedHat: #IBM Ownership Won't Change #opensource Mission https://t.co/G8zDNCewyk https://t.co/2KIDNnVpvK
#RedHat: #IBM Ownership Won't Change #opensource Mission https://t.co/G8zDNCewyk pic.twitter.com/2KIDNnVpvK
— Wladek Grabinski (@wladek60) May 9, 2019
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May 09, 2019 at 08:28PM
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May 7, 2019
The state of #opensource in South Korea https://t.co/2dNMJq9ot9
The state of #opensource in South Korea https://t.co/2dNMJq9ot9
— Wladek Grabinski (@wladek60) May 7, 2019
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May 07, 2019 at 03:29PM
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May 5, 2019
X. Liu, T. Ytterdal, V. Y. Kachorovskii and M. S. Shur, "Compact Terahertz SPICE/ADS Model," Abstract: We describe a compact THz SPICE/ADS model based on the extended EKV model with channel segmentation but accounting for the new physics https://t.co/sVhj5RlwHh #paper https://t.co/N0dj9AIlWn
X. Liu, T. Ytterdal, V. Y. Kachorovskii and M. S. Shur, "Compact Terahertz SPICE/ADS Model," Abstract: We describe a compact THz SPICE/ADS model based on the extended EKV model with channel segmentation but accounting for the new physics https://t.co/sVhj5RlwHh #paper pic.twitter.com/N0dj9AIlWn
— Wladek Grabinski (@wladek60) May 5, 2019
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May 05, 2019 at 12:16PM
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May 2, 2019
Atomera adds dopant engineering to boost #transistor performance using Mears Silicon Technology (#MST) https://t.co/OC05r0eGKd #paper https://t.co/81WNPzuMHX
Atomera adds dopant engineering to boost #transistor performance using Mears Silicon Technology (#MST) https://t.co/OC05r0eGKd #paper pic.twitter.com/81WNPzuMHX
— Wladek Grabinski (@wladek60) May 2, 2019
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May 02, 2019 at 05:52PM
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#RF #GaN 2019 - Patent Landscape Analysis - i-Micronews https://t.co/mTVWGKo0pc #paper https://t.co/EX83lTOEQF
#RF #GaN 2019 - Patent Landscape Analysis - i-Micronews https://t.co/mTVWGKo0pc #paper pic.twitter.com/EX83lTOEQF
— Wladek Grabinski (@wladek60) May 2, 2019
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May 02, 2019 at 09:25AM
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Apr 30, 2019
IMEC, Leti and Fraunhofer have agreed to join forces with the SEMI industry association to drive nanoelectronic roadmaps and standards. https://t.co/HVT0PmaowD #paper https://t.co/ZPXSDAZ5FL
IMEC, Leti and Fraunhofer have agreed to join forces with the SEMI industry association to drive nanoelectronic roadmaps and standards. https://t.co/HVT0PmaowD #paper pic.twitter.com/ZPXSDAZ5FL
— Wladek Grabinski (@wladek60) April 30, 2019
from Twitter https://twitter.com/wladek60
April 30, 2019 at 04:18PM
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No company is ready to dethrone #TSMC from #1 spot” https://t.co/BNUjnLpq5f #paper https://t.co/fU2THb8wov
No company is ready to dethrone #TSMC from #1 spot” https://t.co/BNUjnLpq5f #paper pic.twitter.com/fU2THb8wov
— Wladek Grabinski (@wladek60) April 30, 2019
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April 30, 2019 at 01:31PM
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