Well, it has been a little bit disappointing, because though there were near 100 works, only four of them were on compact modeling. However, the rest of all has been very interesting, and I've learn more than I ever wanted to know about fabrication processes...
Once everything is added up, I'd like to point out some papers: one of Plastic Logic, Ltd where they were presenting statistics about defects in their fabricated circuits (panels), and another from Canon and the Tokyo Institute of Technology.
The latter was about parameter dispersion on TFT, one thing I believe to be quite forgotten about in compact modeling and very (VERY) important for design. The paper is good, but it lets out many things (effects of separation, orientation, mismatch in size, correlations among variations, etc...) However, it is a good start.
Jan 29, 2007
Jan 23, 2007
The European Network of Excellence "SINANO" addressed Compact Modelling of Multiple-Gate MOSFETs
From January 2004 to December 2006, a number of European teams have been working together in a Network of Excellence called SINANO, devoted to the study of novel structures of Silicon nanodevices.
The work has included technology, characterization, advanced simulation and compact modeling of novel structures of nanoscale MOSFETs.
The compact modeling work has especially addressed Multuple-Gate MOSFETs, in particular Double-Gate (DG) and Gate All Around (GAA) MOSFETs. The joint effort on compact modeling has led to several publications in international journals and conference proceedings.
Among the compact modeling publications carried out under the umbrella of the SINANO Network of Excellence, I want to mention the following paper, which was invited to the Special Issue on Advanced Compact Models and 45-nm Modeling Challenges, of IEEE Transactions on Electron Devices:
B. Iñiguez, T. A., Fjeldly, A. Lazaro, F. Danneville and M. J. Deen, “Compact-modeling solutions for nanoscale double-gate and gate-all-around MOSFETs,” IEEE Trans. on Electron Devices, vol 53, no. 9, pp. 2128-2142 September 2006
The work has included technology, characterization, advanced simulation and compact modeling of novel structures of nanoscale MOSFETs.
The compact modeling work has especially addressed Multuple-Gate MOSFETs, in particular Double-Gate (DG) and Gate All Around (GAA) MOSFETs. The joint effort on compact modeling has led to several publications in international journals and conference proceedings.
Among the compact modeling publications carried out under the umbrella of the SINANO Network of Excellence, I want to mention the following paper, which was invited to the Special Issue on Advanced Compact Models and 45-nm Modeling Challenges, of IEEE Transactions on Electron Devices:
B. Iñiguez, T. A., Fjeldly, A. Lazaro, F. Danneville and M. J. Deen, “Compact-modeling solutions for nanoscale double-gate and gate-all-around MOSFETs,” IEEE Trans. on Electron Devices, vol 53, no. 9, pp. 2128-2142 September 2006
(This is an excellent review of the compact modeling work carried so far in Multiple-Gate devices and provides very interesting solutions for a 2-D or 3-D analytical model)
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