Showing posts with label self-heating. Show all posts
Showing posts with label self-heating. Show all posts

May 15, 2020

[paper] Electrical characterization of advanced MOSFETs

Valeriya Kilchytska, Sergej Makovejev, Babak Kazemi Esfeh, Lucas Nyssens, Arka Halder,
Jean-Pierre Raskin and Denis Flandre
Electrical characterization of advanced MOSFETs towards analog and RF applications
IEEE LAEDC, San Jose, Costa Rica, 2020, 
doi: 10.1109/LAEDC49063.2020.9073536

Abstract - This invited paper reviews main approaches in the electrical characterization of advanced MOSFETs towards their target analog and RF applications. Advantages and necessity of those techniques will be demonstrated on different study cases of various advanced MOSFETs, such as FDSOI, FinFET, NW in a wide temperature range, based on our original research over the last years. 

URL: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9073536&isnumber=9072949

Acknowledgements - This work was partially funded by Eniac “Places2Be”, Ecsel “Waytogofast”, FNRS - FRFC “Towards Highly-efficient 10 nm MOSFETs”, FP7 “Nanosil” and “Nanofunction” projects. The authors thank our colleagues from CEA-Leti, ST and Imec, and particularly, F. Andrieu, O. Faynot, T. Poiroux, S. Barraud, M. Haond, N. Planes, N. Collaert, C. Claeys, M. Jurczak, B. Parvais, R. Rooyackers, for providing UTBB FD SOI, NW and FinFET devices and valuable discussions.

Nov 5, 2009

An interesting paper in the Intl. Jornal of Numercal Modelling (vol 22(6))

This is not exactly compact modelling, but it's a nice thing to see:

SPICE-aided modelling of dc characteristics of power bipolar transistors with self-heating taken into account

Janusz Zarbski, Krzysztof Górecki
Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland

Abstract
This paper deals with the problem of calculations of the dc characteristics of power bipolar transistors (BJTs) with self-heating taken into account. The electrothermal model of the considered devices dedicated for PSPICE is presented. The correctness of the model was verified experimentally in all ranges of the BJT operation. Two transistors - BD285 and 2N3055 - were arbitrarily selected for investigation. A good agreement between the measured and calculated characteristics of these transistors was observed.

You can access the online version here.