Valeriya Kilchytska, Sergej Makovejev, Babak Kazemi Esfeh, Lucas Nyssens, Arka Halder,
Jean-Pierre Raskin and Denis Flandre
Electrical characterization of advanced MOSFETs towards analog and RF applications
IEEE LAEDC, San Jose, Costa Rica, 2020,
doi: 10.1109/LAEDC49063.2020.9073536
Abstract - This invited paper reviews main approaches in the electrical characterization of advanced MOSFETs towards their target analog and RF applications. Advantages and necessity of those techniques will be demonstrated on different study cases of various advanced MOSFETs, such as FDSOI, FinFET, NW in a wide temperature range, based on our original research over the last years.
URL: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9073536&isnumber=9072949
Acknowledgements - This work was partially funded by Eniac “Places2Be”, Ecsel “Waytogofast”, FNRS - FRFC “Towards Highly-efficient 10 nm MOSFETs”, FP7 “Nanosil” and “Nanofunction” projects. The authors thank our colleagues from CEA-Leti, ST and Imec, and particularly, F. Andrieu, O. Faynot, T. Poiroux, S. Barraud, M. Haond, N. Planes, N. Collaert, C. Claeys, M. Jurczak, B. Parvais, R. Rooyackers, for providing UTBB FD SOI, NW and FinFET devices and valuable discussions.
No comments:
Post a Comment