Thursday, 5 November 2009

An interesting paper in the Intl. Jornal of Numercal Modelling (vol 22(6))

This is not exactly compact modelling, but it's a nice thing to see:

SPICE-aided modelling of dc characteristics of power bipolar transistors with self-heating taken into account

Janusz Zarbski, Krzysztof Górecki
Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland

Abstract
This paper deals with the problem of calculations of the dc characteristics of power bipolar transistors (BJTs) with self-heating taken into account. The electrothermal model of the considered devices dedicated for PSPICE is presented. The correctness of the model was verified experimentally in all ranges of the BJT operation. Two transistors - BD285 and 2N3055 - were arbitrarily selected for investigation. A good agreement between the measured and calculated characteristics of these transistors was observed.

You can access the online version here.

1 comment:

wladek@mos-ak.org said...

the link is brocken, it should be read as http://www3.interscience.wiley.com/journal/122498527/abstract?CRETRY=1&SRETRY=0