Pulsed I-V on TFETs: Modeling and Measurements
Quentin Smets, Anne Verhulst, Ji-Hong Kim, Jason P. Campbell, David Nminibapiel, Dmitry Veksler, Pragya Shrestha, Rahul Pandey, Eddy Simoen, David Gundlach, Curt Richter, Kin P. Cheung, Suman Datta, Anda Mocuta, Nadine Collaert, Aaron V.-Y. Thean, and Marc M. Heyns
in IEEE Transactions on Electron Devices, vol. 64, no. 4, pp. 1489-1497, April 2017
doi: 10.1109/TED.2017.2670660
Quentin Smets, Anne Verhulst, Ji-Hong Kim, Jason P. Campbell, David Nminibapiel, Dmitry Veksler, Pragya Shrestha, Rahul Pandey, Eddy Simoen, David Gundlach, Curt Richter, Kin P. Cheung, Suman Datta, Anda Mocuta, Nadine Collaert, Aaron V.-Y. Thean, and Marc M. Heyns
in IEEE Transactions on Electron Devices, vol. 64, no. 4, pp. 1489-1497, April 2017
doi: 10.1109/TED.2017.2670660
Abstract:
Most experimental reports of tunneling field-effect transistors show
defect-related performance degradation. Charging of oxide traps causes
Fermi-level pinning, and Shockley–Read–Hall (SRH)/trap-assisted
tunneling (TAT) cause unwanted leakage current. In this paper, we study
these degradation mechanisms using the pulsed I-V technique. Our
simulations show pulsed I-V can fully suppress oxide trap charging,
unlike SRH and TAT. We discuss several circuit-related pitfalls, and we
demonstrate improved transfer characteristics by suppressing oxide trap
charging using cryogenic pulsed I-V [read more...]
