Friday, March 24, 2017

[paper] Pulsed I-V on TFETs: Modeling and Measurements

Pulsed I-V on TFETs: Modeling and Measurements
Quentin Smets, Anne Verhulst, Ji-Hong Kim, Jason P. Campbell, David Nminibapiel, Dmitry Veksler, Pragya Shrestha, Rahul Pandey, Eddy Simoen, David Gundlach, Curt Richter, Kin P. Cheung, Suman Datta, Anda Mocuta, Nadine Collaert, Aaron V.-Y. Thean, and Marc M. Heyns
in IEEE Transactions on Electron Devices, vol. 64, no. 4, pp. 1489-1497, April 2017
doi: 10.1109/TED.2017.2670660

Abstract: Most experimental reports of tunneling field-effect transistors show defect-related performance degradation. Charging of oxide traps causes Fermi-level pinning, and Shockley–Read–Hall (SRH)/trap-assisted tunneling (TAT) cause unwanted leakage current. In this paper, we study these degradation mechanisms using the pulsed I-V technique. Our simulations show pulsed I-V can fully suppress oxide trap charging, unlike SRH and TAT. We discuss several circuit-related pitfalls, and we demonstrate improved transfer characteristics by suppressing oxide trap charging using cryogenic pulsed I-V [read more...]

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