A. Dixit, N. Gupta
A Compact Model of Gate Capacitance
in Ballistic Gate-all-around Carbon Nanotube Field Effect Transistors
IJE TRANSACTIONS A: Basics Vol. 34, No. 7, (July 2021) 1718-1724
DOI: 10.5829/ije.2021.34.07a.16
* Nanomaterial Device Laboratory, Department of Electrical and Electronics Engineering,
Birla Institute of Technology and Science, Pilani, Rajasthan, India
Abstract: This paper presents a one-dimensional analytical model for calculating gate capacitance in Gate-All-Around Carbon Nanotube Field Effect Transistor (GAA-CNFET) using electrostatic approach. The proposed model is inspired by the fact that quantum capacitance appears for the Carbon Nanotube (CNT) which has a low density of states. The gate capacitance is a series combination of dielectric capacitance and quantum capacitance. The model so obtained depends on the density of states (DOS), surface potential of CNT, gate voltage and diameter of CNT. The quantum capacitance obtained using developed analytical model is 2.84 pF/cm for (19, 0) CNT, which is very close to the reported value 2.54 pF/cm. While, the gate capacitance comes out to be 24.3×10-2 pF/cm. Further, the effects of dielectric thickness and diameter of CNT on the gate capacitance are also analyzed. It was found that as we reduce the thickness of dielectric layer, the gate capacitance increases very marginally, which provides better gate control upon the channel. The close match between the calculated and simulated results confirms the validity of the proposed model.
Fig. Schematic view of CNFET for modelling gate capacitance (a) front view (b) side view
Acknowledgements: Authors acknowledge the financial support of Defence Research and Development Organisation (DRDO), Govt. of India [ERIP/ER/DGMED&OS/990416502/ M/01/1657] and Nanomaterial device laboratory, BITS Pilani for carrying research out work reported this paper.
