[mos-ak] [Announcement] MOS-AK LatAm Webinar, Dec. 11-12, 2025

Arbeitskreis Modellierung von Systemen und Parameterextraktion

Modeling of Systems and Parameter Extraction Working Group

MOS-AK Workshop

LatAm (online), Dec. 11-12, 2025

The End‑of‑Year MOS-AK Workshop/Webinar on Compact/SPICE Modeling will be held online on December 11–12, 2025. We invite you to join this webinar and learn from experts in Compact SPICE modeling, Verilog‑A standardization, and FOSS CAD/EDA design support for OpenPDKs. The MOS-AK LatAm Workshop provides a forum to: Strengthen networks and discussions among experts in compact/SPICE modeling; Promote open information exchange on Verilog‑A standardization; Connect academic and industrial specialists in the modeling field; Gather feedback from technology manufacturers, circuit designers, and CAD/EDA tool developers supporting foundry/fabless interface strategies with a focus on OpenPDKs (e.g., Skywater/GF CMOS, IHP RF BiCMOS)

 

Important Dates:

• 1st Announcement: Nov. 2025
• Final Workshop Program: Dec.1 2025
• MOS-AK LatAm online/webinar: Dec. 11-12, 2025

MOS-AK/LatAm Speakers Tentative List (alphabetic order):

• Sergio Bampi, Mateus Grellert and team at UFRGS (BR)
• Juan Pablo Martinez Brito, CEITEC S.A. (BR)
• Carlos Galup, Márcio Cherem Schneider and team at UFSC (BR))
• Krzysztof Herman, IHP (D)
• Eduardo Holguín and team at Universidad San Francisco de Quito (EC)
• Uriel Jaramillo and team from CINVESTAV (MX)
• Peter Lee, Si2 CMC Chair (US)
• Jorge Ivan Marin Hurtado, Universidad del Quindío (CO)
• Mehdi Saligane, Uni. Brown (US) IEEE SSCS TC-OSE Chair
• Fahad Usmani, Keysight (US)

Online Abstract Submission will be open (any related enquiries can be sent to abstracts@mos-ak.org)
Online Free Registration will be open (any related enquiries can be sent to registration@mos-ak.org)

W.Grabinski for Extended MOS-AK Committee

WG221125

--
You received this message because you are subscribed to the Google Groups "mos-ak" group.
To unsubscribe from this group and stop receiving emails from it, send an email to mos-ak+unsubscribe@googlegroups.com.
To view this discussion visit https://groups.google.com/d/msgid/mos-ak/CALp-Rj9QS%2BkcbVHe-R83iKWT0z_FqnFwmhtGS7i9SnCijkV3vQ%40mail.gmail.com.

[C4P] ICMC2026 Submission Deadline: February 1, 2026 (4-page paper)

ICMC2026 | July 30-31, 2026| Long Beach, CA

Call for Papers
Submission Deadline: February 1, 2026  (4-page paper)

The Compact Model Coalition (CMC) brings academia and industry partners together in the development and standardization of compact models for semiconductor devices. For more than 30 years, the CMC has been instrumental in creating standardized and verified models for designers to use in their increasingly complex circuits for SPICE simulation. The CMC is organizing the second edition of the International Compact Modeling Conference, cosponsored by IEEE EDS. It will focus uniquely on compact device models, their development, and broad application in the semiconductor industry. You are invited to participate in the evolution of these models, guiding model development to help circuit designers achieve the best circuit performance possible, and enabling foundries to leverage the strength of their device fabrication to the full extent. Join world experts in design, process technology, and model development for a two-day in-person event to discuss state-of-the-art semiconductor device modeling, offering a rare opportunity to present and learn about this core element of circuit design and how to get the most from these global collaborations.

 
HIGHLIGHTED THEMES FOR ICMC 2026 

This year, ICMC especially encourages submissions in the following domains: 

• Electrostatic Discharge (ESD) modeling for protection design
• Modeling of parasitic BJT activation, snapback behavior, ESD stress and breakdown, transient response, failure prediction, etc.
• Reliability and aging-aware compact models and simulation techniques
• for degradation mechanisms such as Bias Temperature Instability (BTI), Hot Carrier Degradation (HCI), Time Dependent Dielectric Breakdown (TDDB)
• self-heating and circuit reliability prediction
• AI or Machine Learning for model development, parameter extraction, circuit simulation efficiency, etc. 

GENERAL TOPICS 

 We are also seeking submissions in the following domains.

Application of Device Models Innovative application of CMC standard device models Designer's perspective: best practices, novel use, and benefits of standard device models to improve circuit design and system performance. Use of compact models to demonstrate foundry device capabilities Device Model Development Modeling of physical phenomena: Statistical variation, noise and fluctuations, RF and high-frequency effects, layout effects, etc. Methodologies to assist in model development, practices for coding, quality assurance, circuit simulator integration, etc. Parameter extraction, measurement techniques, model calibration, validation, and verification methodologies.	Model Enhancements and Implementations Model extensions to capture additional device features (leakage, capacitance, second-order dependencies)or expand the operating range of existing devices (bias, power, temperature, frequency, etc.) Model enhancements to support the design of new or demanding circuits Model workflow, implementation, and integration into the design environment (PDK) Computing/simulation platforms, simulation algorithms, and methodologies to improve simulation performance (parallel processing, etc.) Models for established device types that currently lack standardization. Emerging devices Modeling of emerging and future devices:compact models for novel device technologies and architectures that could further revolutionize circuit performance and design flow. For example, complementary FET, ferroelectric devices, silicon photonics, MRAM, RRAM, cryogenic, quantum computing, 2D-materials, oxide semiconductors, etc.
IMPORTANT DATES February 1, 2026 Submission deadline  (4-page paper) April 6, 2026 Acceptance notification May 10, 2026 Final version for publication July 30-31, 2026 Conference takes place For more details, visit: 2026.si2-icmc.org	ICMC2026 COMMITTEE General Chair: Shahed Reza (Sandia National Laboratories) Vice Chair: Harshit Agarwal (IIT Jodhpur) Technical Program Chair: Gert-Jan Smit (NXP) Technical Program Vice-Chair: Girish Pahwa (NYCU Taiwan) Treasurer: Leigh Anne Clevenger (Si2) Publicity Committee Chair: Wladek Grabinski (MOS-AK)

[C4P] Exploring Beyond-CMOS Paradigms for Energy-Efficient Computing

Exploring Beyond-CMOS Paradigms for Energy-Efficient Computing

Call for Papers

Excited to announce that our Research Topic is now open for submissions! As CMOS technology reaches its limits, emerging devices like NCFETs, TFETs, spintronic systems, 2D materials, wide-bandgap semiconductors, and MEMS are paving the way for next-generation low-power computing. We invite Original Research, Reviews, Mini-Reviews, and Perspectives from researchers working on innovative materials, devices, models, circuits, and system-level demonstrations.

• Summary Deadline: 13 Feb 2026
• Manuscript Deadline: 29 May 2026

Let’s push the boundaries of energy-efficient, beyond-CMOS electronics together! Submit your work and be part of this emerging frontier.

Call for Papers - Frontiers in Electronics with Impact Factor: 2.1

Topic editors

Fabrizio Bonani, Polytechnic University of Turin (IT)

Mariana Amorim Fraga, School of Engineering, UPM, São Paulo, (BR)

Sonal Shreya, Aarhus University (DK)

Abhishek Acharya, Sardar Vallabhbhai National Institute of Technology Surat (IN)

Topic coordinator

Khoirom Johnson Singh, Dhanamanjuri University, Imphal, Manipur (IN)

[IEEE EDS DL] Multifunctional materials for emerging optoelectronic technologies

IEEE EDS Distinguished Lecture

Hawaii Section Jt. Chapter, ED15/SSC37

December 19 @ 6:30 pm - 8:00 pm

Room: 244, Bldg: Holmes Hall, 2540 Dole St, Honolulu

Hawaii, United States, 96822

Dr. Federico Rosei from the University of Trieste will be presenting a Distinguished Lecturer Seminar titled "Multifunctional materials for emerging optoelectronic technologies" on Friday December 19th at 6:30PM. RSVP one week in advance for a headcount on food [register]

Abstract: functionalities. Such systems are then used as building blocks for the fabrication of various emerging technologies. In particular, nanostructured materials synthesized via the bottom–up approach present an opportunity for future generation low cost manufacturing of devices. We focus in particular on recent developments in solar technologies that aim to address the energy challenge, including third generation photovoltaics, solar hydrogen production, luminescent solar concentrators and other optoelectronic devices. 

Bio: Federico Rosei (MSc (1996) and PhD (2001) from the University of Rome “La Sapienza”) holds the Chair of Industrial Chemistry at the Department of Chemical and Pharmaceutical Sciences, University of Trieste since March 2023. Previously he was Full Professor at the Centre Énergie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique, Varennes (QC) Canada, where he served as Director (07/2011–03/2019). He held the Canada Research Chair (Junior) in Nanostructured Organic and Inorganic Materials (2003–2013) and the Canada Research Chair (Senior) in Nanostructured Materials (2016–2023) and the UNESCO Chair in Materials and Technologies for Energy Conversion, Saving and Storage (2013–2023).

[paper] Compact Wide-Band Antenna

A. Anand Babu, K. Thenmalar

Design and Evaluation of a Compact Wide-Band Antenna for Wearable Wireless Applications

Tehnički vjesnik 32, 6(2025), 2437-2442

Original scientific paper DOI: 10.17559/TV-20241128002156

ECE, Vivekanandha College of Technology, Tiruchengode, Tamil Nadu, India
EEE, Vivekanandha College of Engineering for Women, Tiruchengode, Tamil Nadu, India

Abstract: This article presents a compact wide-band antenna designed for emerging wireless applications. The antenna utilizes a fiberglass-reinforced (FR4) substrate material with a thickness of 1.6 mm as its base. By varying the length and side edge dimensions of the antenna element, the design achieves a wide operational bandwidth ranging from 3.2 to 3.8 GHz, covering all new radio bands. Experimental optimization of various parameters has been conducted to ensure precise tuning within the desired frequency range. The antenna exhibits a uniform radiation pattern across its operating band, ensuring stable performance. Specific Absorption Rate (SAR) evaluations, conducted as per the Federal Communications Commission (FCC) guidelines, confirm the SAR values remain within the prescribed safety limit of 1.6 W/kg when the antenna is positioned on a human phantom model. The proposed antenna also demonstrates high radiation efficiency and peak gain, making it suitable for wearable applications where compact size and reliable performance are critical. This innovative design addresses the growing demand for wide-band antennas in wireless communication systems, emphasizing safety, efficiency, and adaptability for wearable technologies.

Fig: Electric field distribution over the radiating circle at (a) 3.45 GHz; (b) 3.7 GHz

(c) - (d) fabricated antenna images

[Free Session] Tokai Rika OpenPDK

Tokai Rika Shuttle Open PDK Commentary Free Session

Saturday, December 13, 2025 13:00~17:00 [and online]

WeWork Hibiya FORT TOWER 9th Floor, Conference Room 9R

1-1 Nishi-Shimbashi, Minato-ku, Tokyo

Time	Speaker	Topic
12:50	ISHI Club	1F Gathering
13:00	ISHI Club	Opening
13:00-13:30	OpenSUSI	Overview of Tokai Rika Shuttle PDK and future plans
13:30-14:30	jun1okamura	Outline of the production of DRC and LVS of Tokai Rika Shuttle PDK and explanation of contents
14:30-15:00	OpenSUSI	Break & Information Exchange
15:00-15:30	Mitch Bailey	Detailed explanation of LVS (Japanese lecture)
15:30-16:00	Hota (SIG's Playground)	How to 🚶 walk through open source PDK: "What is PDK in the first place?" "Where do you want to "read" PDK? "If you want to make your own PDK, where do you start?" and "Examples of what you have done so far".
16:00-16:30	OpenSUSI	PDK Conversation: jun1okamura x Hota x Mitch Bailey: Mr. Hota, an expert in commercial PDK development at a major domestic company, and Mitch Bailey, an expert in open PDK who has been performing structural checks and PDK maintenance of GDS submitted by eFabless, etc.
16:30-17:00	OpenSUSI	PDK Conversation / Honest Edition (No more online streaming will be done from now on): Continuing from the above, we plan to talk about things that cannot be said publicly. In a sense, this may be the real thing.
17:00	ISHI Club	Closing

Discord invitation link 

https://discord.gg/Sj47dJk8x7 

https://discord.gg/RwAWF5mZSR

[Book] Essential Semiconductor Physics

Essential Semiconductor Physics

Mark Lundstrom (Purdue University, USA)

New Era Electronics: A Lecture Notes Series

Pages: 424; October 2025

https://doi.org/10.1142/14454

This book is the fourth volume in the New Era Electronics lecture notes series, a compilation of volumes defining the important concepts tied to the electronics transition happening in the 21st century.

The lectures in this volume are about the underlying physics that makes semiconductor devices possible. The treatment is physical and intuitive; the text is descriptive, not heavily mathematical. The lectures are designed to be broadly accessible to students in science or engineering and to working engineers. They present an electrical engineering perspective, but those in other fields may find them a useful introduction to the approach that has guided the development of semiconductor technology for more than 75 years.

For those who use semiconductor devices, these lectures provide an understanding of the physics that underlies their operation. For those developing semiconductor technologies, these lectures provide a starting point for diving deeper into the physics, chemistry, and materials science relevant to semiconductors. Those who have taken advanced courses will see how specific topics fit into a broader framework. 

Book Sections

Front Matter; pp. i–xvi

Part 1: Materials Properties and Doping

• Lecture 1: Energy Levels to Energy Bands; pp. 3–16
• Lecture 2: Crystalline, Polycrystalline, and Amorphous Semiconductors; pp. 17–27
• Lecture 3: Miller Indices; pp. 29–39
• Lecture 4: Properties of Common Semiconductors; pp. 41–46
• Lecture 5: Free Carriers in Semiconductors; pp. 47–56
• Lecture 6: Doping; pp. 57–75

Part 2: Rudiments of Quantum Mechanics

• Lecture 7: The Wave Equation; pp. 79–99
• Lecture 8: Quantum Confinement; pp. 101–116
• Lecture 9: Quantum Tunneling and Reflection; pp. 117–129
• Lecture 10: Electron Waves in Crystals; pp. 131–145
• Lecture 11: Density of States; pp. 147–164

Part 3: Equilibrium Carrier Concentrations

• Lecture 12: The Fermi Function; pp. 167–177
• Lecture 13: Fermi-Dirac Integrals; pp. 179–190
• Lecture 14: Carrier Concentration vs. Fermi Level; pp. 191–203
• Lecture 15: Carrier Concentration vs. Doping Density; pp. 205–213
• Lecture 16: Carrier Concentration vs. Temperature; pp. 215–228

Part 4: Carrier Transport, Recombination, and Generation

• Lecture 17: Current Equation; pp. 231–250
• Lecture 18: Drift Current; pp. 251–270
• Lecture 19: Diffusion Current; pp. 271–280
• Lecture 20: Drift-Diffusion Equation; pp. 281–288
• Lecture 21: Carrier Recombination; pp. 289–308
• Lecture 22: Carrier Generation; pp. 309–323

Part 5: The Semiconductor Equations

• Lecture 23: The Semiconductor Equations; pp. 327–342
• Lecture 24: Energy Band Diagrams; pp. 343–361
• Lecture 25: Quasi-Fermi Levels; pp. 363–374
• Lecture 26: Minority Carrier Diffusion Equation; pp. 375–396

Back Matter; pp. 397–406